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Dioda - Penyearah - Tunggal

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  • Dioda - Penyearah - Tunggal
CUS05S30,H3F
Toshiba Semiconductor and Storage

CUS05S30,H3F

BAGIAN SAHAM: 141424

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 340mV @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS10S30,H3F
Toshiba Semiconductor and Storage

CUS10S30,H3F

BAGIAN SAHAM: 175222

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 230mV @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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JDH2S02SL,L3F
Toshiba Semiconductor and Storage

JDH2S02SL,L3F

BAGIAN SAHAM: 21594

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 10V, Arus - Rata-Rata Dikoreksi (Io): 10mA (DC), Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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CTS520,L3F
Toshiba Semiconductor and Storage

CTS520,L3F

BAGIAN SAHAM: 122854

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CCS15S40,L3F
Toshiba Semiconductor and Storage

CCS15S40,L3F

BAGIAN SAHAM: 159042

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS10S40,H3F
Toshiba Semiconductor and Storage

CUS10S40,H3F

BAGIAN SAHAM: 172576

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMF05(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMF05(TE12L,Q,M)

BAGIAN SAHAM: 158502

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 2.7V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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CTS05S30,L3F
Toshiba Semiconductor and Storage

CTS05S30,L3F

BAGIAN SAHAM: 114342

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 340mV @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CES388,L3F
Toshiba Semiconductor and Storage

CES388,L3F

BAGIAN SAHAM: 155708

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 100mA, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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CMS11(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS11(TE12L,Q,M)

BAGIAN SAHAM: 159752

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS05S40,H3F
Toshiba Semiconductor and Storage

CUS05S40,H3F

BAGIAN SAHAM: 139868

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 350mV @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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TRS6E65C,S1AQ
Toshiba Semiconductor and Storage

TRS6E65C,S1AQ

BAGIAN SAHAM: 11358

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 650V, Arus - Rata-Rata Dikoreksi (Io): 6A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 6A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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CMS03(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS03(TE12L,Q,M)

BAGIAN SAHAM: 144392

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS06(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS06(TE12L,Q,M)

BAGIAN SAHAM: 184133

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRS09(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRS09(TE85L,Q,M)

BAGIAN SAHAM: 139204

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRH01(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRH01(TE85L,Q,M)

BAGIAN SAHAM: 121678

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 980mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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CRS08(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRS08(TE85L,Q,M)

BAGIAN SAHAM: 183971

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRS01(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRS01(TE85L,Q,M)

BAGIAN SAHAM: 104302

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS04(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS04(TE12L,Q,M)

BAGIAN SAHAM: 164330

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS05(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS05(TE12L,Q,M)

BAGIAN SAHAM: 112076

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS08F30,H3F
Toshiba Semiconductor and Storage

CUS08F30,H3F

BAGIAN SAHAM: 193256

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 220mV @ 10mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CBS10F40,L3F
Toshiba Semiconductor and Storage

CBS10F40,L3F

BAGIAN SAHAM: 8420

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS10F40,H3F
Toshiba Semiconductor and Storage

CUS10F40,H3F

BAGIAN SAHAM: 4875

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 670mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS520,H3F
Toshiba Semiconductor and Storage

CUS520,H3F

BAGIAN SAHAM: 181235

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 280mV @ 10mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS05F40,H3F
Toshiba Semiconductor and Storage

CUS05F40,H3F

BAGIAN SAHAM: 4923

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 810mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS05F30,H3F
Toshiba Semiconductor and Storage

CUS05F30,H3F

BAGIAN SAHAM: 151245

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CTS05F40,L3F
Toshiba Semiconductor and Storage

CTS05F40,L3F

BAGIAN SAHAM: 8357

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 810mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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