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Transistor - Bipolar (BJT) - RF

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2SC5087YTE85LF
Toshiba Semiconductor and Storage

2SC5087YTE85LF

BAGIAN SAHAM: 144

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.1dB @ 1GHz, Mendapatkan: 13dB, Daya - Maks: 150mW,

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2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5084-O(TE85L,F)

BAGIAN SAHAM: 170

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.1dB @ 1GHz, Mendapatkan: 11dB, Daya - Maks: 150mW,

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2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC4215-Y(TE85L,F)

BAGIAN SAHAM: 171976

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 30V, Frekuensi - Transisi: 550MHz, Angka Kebisingan (dB Typ@f): 2dB ~ 5dB @ 100MHz, Mendapatkan: 17dB ~ 23dB, Daya - Maks: 100mW,

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2SC5066-O,LF
Toshiba Semiconductor and Storage

2SC5066-O,LF

BAGIAN SAHAM: 111075

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Daya - Maks: 100mW,

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2SC5085-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC5085-Y(TE85L,F)

BAGIAN SAHAM: 128600

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.1dB @ 1GHz, Mendapatkan: 11dB ~ 16.5dB, Daya - Maks: 100mW,

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2SC5086-O,LF
Toshiba Semiconductor and Storage

2SC5086-O,LF

BAGIAN SAHAM: 121034

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Daya - Maks: 100mW,

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2SC5065-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5065-O(TE85L,F)

BAGIAN SAHAM: 190

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Daya - Maks: 100mW,

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2SC5085-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5085-O(TE85L,F)

BAGIAN SAHAM: 170

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Daya - Maks: 100mW,

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2SC5095-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5095-O(TE85L,F)

BAGIAN SAHAM: 187

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 10V, Frekuensi - Transisi: 10GHz, Angka Kebisingan (dB Typ@f): 1.8dB @ 2GHz, Mendapatkan: 13dB ~ 7dB, Daya - Maks: 100mW,

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2SC5086-Y,LF
Toshiba Semiconductor and Storage

2SC5086-Y,LF

BAGIAN SAHAM: 173074

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Daya - Maks: 100mW,

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2SC5095-R(TE85L,F)
Toshiba Semiconductor and Storage

2SC5095-R(TE85L,F)

BAGIAN SAHAM: 128

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 10V, Frekuensi - Transisi: 10GHz, Angka Kebisingan (dB Typ@f): 1.8dB @ 2GHz, Mendapatkan: 13dB ~ 7.5dB, Daya - Maks: 100mW,

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2SC4915-O,LF
Toshiba Semiconductor and Storage

2SC4915-O,LF

BAGIAN SAHAM: 124837

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 30V, Frekuensi - Transisi: 550MHz, Angka Kebisingan (dB Typ@f): 2.3dB ~ 5dB @ 100MHz, Mendapatkan: 17dB ~ 23dB, Daya - Maks: 100mW,

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2SC5084YTE85LF
Toshiba Semiconductor and Storage

2SC5084YTE85LF

BAGIAN SAHAM: 152602

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.1dB @ 1GHz, Mendapatkan: 11dB, Daya - Maks: 150mW,

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2SC5087-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5087-O(TE85L,F)

BAGIAN SAHAM: 162523

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB ~ 1.1dB @ 500MHz ~ 1GHz, Daya - Maks: 150mW,

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2SC5066-Y,LF
Toshiba Semiconductor and Storage

2SC5066-Y,LF

BAGIAN SAHAM: 133840

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Daya - Maks: 100mW,

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2SC2714-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC2714-Y(TE85L,F)

BAGIAN SAHAM: 132303

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 30V, Frekuensi - Transisi: 550MHz, Angka Kebisingan (dB Typ@f): 2.5dB @ 100MHz, Mendapatkan: 23dB, Daya - Maks: 100mW,

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2SC5087R(TE85L,F)
Toshiba Semiconductor and Storage

2SC5087R(TE85L,F)

BAGIAN SAHAM: 156257

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 8GHz, Angka Kebisingan (dB Typ@f): 1.1dB ~ 2dB @ 1GHz, Daya - Maks: 150mW,

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2SC5065-Y(TE85L,F)
Toshiba Semiconductor and Storage

2SC5065-Y(TE85L,F)

BAGIAN SAHAM: 190913

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.1dB @ 1GHz, Mendapatkan: 12dB ~ 17dB, Daya - Maks: 100mW,

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2SC2714-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC2714-O(TE85L,F)

BAGIAN SAHAM: 167393

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 30V, Frekuensi - Transisi: 550MHz, Angka Kebisingan (dB Typ@f): 2.5dB @ 100MHz, Mendapatkan: 23dB, Daya - Maks: 100mW,

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2SC5088-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC5088-O(TE85L,F)

BAGIAN SAHAM: 7295

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1dB @ 500MHz, Mendapatkan: 18dB, Daya - Maks: 100mW,

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2SC5108-Y,LF
Toshiba Semiconductor and Storage

2SC5108-Y,LF

BAGIAN SAHAM: 4783

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 10V, Frekuensi - Transisi: 6GHz, Mendapatkan: 11dB, Daya - Maks: 100mW,

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2SC4915-Y,LF
Toshiba Semiconductor and Storage

2SC4915-Y,LF

BAGIAN SAHAM: 7101

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 30V, Frekuensi - Transisi: 550MHz, Angka Kebisingan (dB Typ@f): 2.3dB ~ 5dB @ 100MHz, Mendapatkan: 17dB ~ 23dB, Daya - Maks: 100mW,

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2SC5096-R,LF
Toshiba Semiconductor and Storage

2SC5096-R,LF

BAGIAN SAHAM: 7064

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 10V, Frekuensi - Transisi: 10GHz, Angka Kebisingan (dB Typ@f): 1.4dB @ 1GHz, Mendapatkan: 1.4dB, Daya - Maks: 100mW,

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2SC4215-O(TE85L,F)
Toshiba Semiconductor and Storage

2SC4215-O(TE85L,F)

BAGIAN SAHAM: 160292

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 30V, Frekuensi - Transisi: 550MHz, Angka Kebisingan (dB Typ@f): 5dB @ 100MHz, Mendapatkan: 23dB, Daya - Maks: 100mW,

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MT3S111(TE85L,F)
Toshiba Semiconductor and Storage

MT3S111(TE85L,F)

BAGIAN SAHAM: 91

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 6V, Frekuensi - Transisi: 11.5GHz, Angka Kebisingan (dB Typ@f): 1.2dB @ 1GHz, Mendapatkan: 12dB, Daya - Maks: 700mW,

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MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S111P(TE12L,F)

BAGIAN SAHAM: 18982

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 6V, Frekuensi - Transisi: 8GHz, Angka Kebisingan (dB Typ@f): 1.25dB @ 1GHz, Mendapatkan: 10.5dB, Daya - Maks: 1W,

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MT3S113P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S113P(TE12L,F)

BAGIAN SAHAM: 4314

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 5.3V, Frekuensi - Transisi: 7.7GHz, Angka Kebisingan (dB Typ@f): 1.45dB @ 1GHz, Mendapatkan: 10.5dB, Daya - Maks: 1.6W,

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MT3S113(TE85L,F)
Toshiba Semiconductor and Storage

MT3S113(TE85L,F)

BAGIAN SAHAM: 9921

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 5.3V, Frekuensi - Transisi: 12.5GHz, Angka Kebisingan (dB Typ@f): 1.45dB @ 1GHz, Mendapatkan: 11.8dB, Daya - Maks: 800mW,

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MT3S20P(TE12L,F)
Toshiba Semiconductor and Storage

MT3S20P(TE12L,F)

BAGIAN SAHAM: 4313

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.45dB @ 1GHz, Mendapatkan: 16.5dB, Daya - Maks: 1.8W,

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MT3S20TU(TE85L)
Toshiba Semiconductor and Storage

MT3S20TU(TE85L)

BAGIAN SAHAM: 135

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.45dB @ 20mA, 5V, Mendapatkan: 12dB, Daya - Maks: 900mW,

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MT3S113TU,LF
Toshiba Semiconductor and Storage

MT3S113TU,LF

BAGIAN SAHAM: 9992

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 5.3V, Frekuensi - Transisi: 11.2GHz, Angka Kebisingan (dB Typ@f): 1.45dB @ 1GHz, Mendapatkan: 12.5dB, Daya - Maks: 900mW,

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MT3S16U(TE85L,F)
Toshiba Semiconductor and Storage

MT3S16U(TE85L,F)

BAGIAN SAHAM: 176440

Jenis Transistor:: NPN, Tegangan - Kerusakan Kolektor Emitter (Maks): 5V, Frekuensi - Transisi: 4GHz, Angka Kebisingan (dB Typ@f): 2.4dB @ 1GHz, Mendapatkan: 4.5dBi, Daya - Maks: 100mW,

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HN3C10FUTE85LF
Toshiba Semiconductor and Storage

HN3C10FUTE85LF

BAGIAN SAHAM: 7065

Jenis Transistor:: 2 NPN (Dual), Tegangan - Kerusakan Kolektor Emitter (Maks): 12V, Frekuensi - Transisi: 7GHz, Angka Kebisingan (dB Typ@f): 1.1dB @ 1GHz, Mendapatkan: 11.5dB, Daya - Maks: 200mW,

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