Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 6

CBS05F30(TPL3)

BAGIAN SAHAM: 1645

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSR01S30SC(TPL3)

BAGIAN SAHAM: 131336

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 100mA, Tegangan - Maju (Vf) (Maks) @ If: 620mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CLS01(TE16L,PAS,Q)

BAGIAN SAHAM: 1424

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.47V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF01S30SC(TPL3)

BAGIAN SAHAM: 1267

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 100mA, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Toshiba Semiconductor and Storage

CLS01(T6LSONY,Q)

BAGIAN SAHAM: 1440

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.47V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH05(T6L,NKOD,Q)

BAGIAN SAHAM: 1359

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.98V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH03(TE16R,Q)

BAGIAN SAHAM: 1368

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CMS03(TE12L)

BAGIAN SAHAM: 1091

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF07S30U(TPH3,F)

BAGIAN SAHAM: 1170

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 700mA, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

DSF05S30U(TPH3,F)

BAGIAN SAHAM: 1121

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

U1GWJ49(TE12L,F)

BAGIAN SAHAM: 852

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS04(TE85L,Q,M)

BAGIAN SAHAM: 101221

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS02(TE85L,Q,M)

BAGIAN SAHAM: 779

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 470mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS06(TE85L,Q,M)

BAGIAN SAHAM: 186793

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUHS10F60,H3F

BAGIAN SAHAM: 9971

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15S40,H3F

BAGIAN SAHAM: 186045

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS11(TE85L,Q,M)

BAGIAN SAHAM: 161979

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAS16,LM

BAGIAN SAHAM: 122216

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 215mA, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS551V30,H3F

BAGIAN SAHAM: 168808

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 470mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS01(TE85L,Q,M)

BAGIAN SAHAM: 784

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 390mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS15S30,H3F

BAGIAN SAHAM: 171031

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

TBAT54,LM

BAGIAN SAHAM: 142010

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 140mA, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 1.5ns,

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Toshiba Semiconductor and Storage

CMS09(TE12L)

BAGIAN SAHAM: 262

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS04(TE85L)

BAGIAN SAHAM: 173

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS02(TE12L)

BAGIAN SAHAM: 183

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS04(TE12L)

BAGIAN SAHAM: 211

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS11(TE12L)

BAGIAN SAHAM: 213

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS09(TE85L)

BAGIAN SAHAM: 196

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS08(TE85L)

BAGIAN SAHAM: 264

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRH01(TE85L)

BAGIAN SAHAM: 5028

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 980mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CRS01(TE85L)

BAGIAN SAHAM: 200

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRS11(TE85L)

BAGIAN SAHAM: 264

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS01(TE12L)

BAGIAN SAHAM: 178

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS01(TE12L,Q,M)

BAGIAN SAHAM: 129014

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CCS15S30,L3QUF

BAGIAN SAHAM: 124325

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS10F30,H3F

BAGIAN SAHAM: 143420

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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