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Dioda - Zener - Single

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  • Dioda - Zener - Single
CRZ13(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ13(TE85L,Q,M)

BAGIAN SAHAM: 99

Tegangan - Zener (Nom) (Vz): 13V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 9V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ20(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ20(TE85L,Q,M)

BAGIAN SAHAM: 140

Tegangan - Zener (Nom) (Vz): 20V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 14V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ36(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ36(TE85L,Q,M)

BAGIAN SAHAM: 137

Tegangan - Zener (Nom) (Vz): 36V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 28.8V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRY62(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRY62(TE85L,Q,M)

BAGIAN SAHAM: 176

Tegangan - Zener (Nom) (Vz): 6.2V, Toleransi: ±9.68%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 60 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 3V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ16(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ16(TE85L,Q,M)

BAGIAN SAHAM: 141

Tegangan - Zener (Nom) (Vz): 16V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 11V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ30(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ30(TE85L,Q,M)

BAGIAN SAHAM: 172

Tegangan - Zener (Nom) (Vz): 30V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 21V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ24(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ24(TE85L,Q,M)

BAGIAN SAHAM: 86

Tegangan - Zener (Nom) (Vz): 24V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 17V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ22(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ22(TE85L,Q,M)

BAGIAN SAHAM: 127

Tegangan - Zener (Nom) (Vz): 22V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 16V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ10(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ10(TE85L,Q,M)

BAGIAN SAHAM: 153

Tegangan - Zener (Nom) (Vz): 10V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 6V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ11(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ11(TE85L,Q,M)

BAGIAN SAHAM: 98

Tegangan - Zener (Nom) (Vz): 11V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 7V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ27(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ27(TE85L,Q,M)

BAGIAN SAHAM: 114

Tegangan - Zener (Nom) (Vz): 27V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 19V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ18(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ18(TE85L,Q,M)

BAGIAN SAHAM: 118

Tegangan - Zener (Nom) (Vz): 18V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 13V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ12(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ12(TE85L,Q,M)

BAGIAN SAHAM: 89

Tegangan - Zener (Nom) (Vz): 12V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 8V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ47(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ47(TE85L,Q,M)

BAGIAN SAHAM: 142

Tegangan - Zener (Nom) (Vz): 47V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 65 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 37.6V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ15(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ15(TE85L,Q,M)

BAGIAN SAHAM: 173943

Tegangan - Zener (Nom) (Vz): 15V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 10V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ43(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ43(TE85L,Q,M)

BAGIAN SAHAM: 170

Tegangan - Zener (Nom) (Vz): 43V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 40 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 34.4V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ39(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ39(TE85L,Q,M)

BAGIAN SAHAM: 150

Tegangan - Zener (Nom) (Vz): 39V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 35 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 31.2V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ10(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ10(TE85L,Q)

BAGIAN SAHAM: 8202

Tegangan - Zener (Nom) (Vz): 10V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 6V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ22(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ22(TE85L,Q)

BAGIAN SAHAM: 3906

Tegangan - Zener (Nom) (Vz): 22V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 16V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ47(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ47(TE85L,Q)

BAGIAN SAHAM: 8171

Tegangan - Zener (Nom) (Vz): 47V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 65 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 37.6V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ30(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ30(TE85L,Q)

BAGIAN SAHAM: 8174

Tegangan - Zener (Nom) (Vz): 30V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 21V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ33(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRZ33(TE85L,Q,M)

BAGIAN SAHAM: 5464

Tegangan - Zener (Nom) (Vz): 33V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 26.4V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ12(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ12(TE85L,Q)

BAGIAN SAHAM: 8245

Tegangan - Zener (Nom) (Vz): 12V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 8V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ11(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ11(TE85L,Q)

BAGIAN SAHAM: 8173

Tegangan - Zener (Nom) (Vz): 11V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 7V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRY68(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRY68(TE85L,Q,M)

BAGIAN SAHAM: 152718

Tegangan - Zener (Nom) (Vz): 6.8V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 60 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 3V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRY82(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRY82(TE85L,Q,M)

BAGIAN SAHAM: 127852

Tegangan - Zener (Nom) (Vz): 8.2V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 4.9V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRY75(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRY75(TE85L,Q,M)

BAGIAN SAHAM: 138193

Tegangan - Zener (Nom) (Vz): 7.5V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 4.5V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRY91(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRY91(TE85L,Q,M)

BAGIAN SAHAM: 5349

Tegangan - Zener (Nom) (Vz): 9.1V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 5.5V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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CRZ18(TE85L,Q)
Toshiba Semiconductor and Storage

CRZ18(TE85L,Q)

BAGIAN SAHAM: 5364

Tegangan - Zener (Nom) (Vz): 18V, Toleransi: ±10%, Daya - Maks: 700mW, Impedansi (Maks) (Zzt): 30 Ohms, Arus - Kebocoran Balik @ Vr: 10µA @ 13V, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA,

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