Transistor - FET, MOSFET - Array

Rumah
Transistor - FET, MOSFET - Array

TPCL4202(TE85L,F)

Toshiba Semiconductor and Storage

TPCL4202(TE85L,F)

BAGIAN SAHAM: 2949

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Vgs(th) (Maks) @ Id: 1.2V @ 200µA,

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TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8304(TE85L,F,M

BAGIAN SAHAM: 2938

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.2A, Rds Aktif (Maks) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs(th) (Maks) @ Id: 1.2V @ 1mA,

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SSM6L13TU(T5L,F,T)

Toshiba Semiconductor and Storage

SSM6L13TU(T5L,F,T)

BAGIAN SAHAM: 2912

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, 1.8V Drive, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 800mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

BAGIAN SAHAM: 2967

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, 2.5V Drive, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs(th) (Maks) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N68NU,LF

BAGIAN SAHAM: 16268

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, 1.8V Drive, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A (Ta), Rds Aktif (Maks) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35AFU,LF

BAGIAN SAHAM: 9923

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 250mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 100µA,

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SSM6N42FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

BAGIAN SAHAM: 2976

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 800mA, Rds Aktif (Maks) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N815R,LF

BAGIAN SAHAM: 9939

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, 4V Drive, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A (Ta), Rds Aktif (Maks) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6L35FE,LM

BAGIAN SAHAM: 172252

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 180mA, 100mA, Rds Aktif (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N67NU,LF

BAGIAN SAHAM: 9963

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, 1.8V Drive, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A (Ta), Rds Aktif (Maks) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35AFE,LF

BAGIAN SAHAM: 13256

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, 1.2V Drive, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 250mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6P35FE,LM

BAGIAN SAHAM: 173905

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA, Rds Aktif (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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SSM6P15FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

BAGIAN SAHAM: 13232

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA, Rds Aktif (Maks) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs(th) (Maks) @ Id: 1.7V @ 100µA,

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SSM6N37CTD(TPL3)

Toshiba Semiconductor and Storage

SSM6N37CTD(TPL3)

BAGIAN SAHAM: 2957

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 250mA, Rds Aktif (Maks) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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SSM6P41FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P41FE(TE85L,F)

BAGIAN SAHAM: 13283

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 720mA, Rds Aktif (Maks) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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TPC8405(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

BAGIAN SAHAM: 3098

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, 4.5A, Rds Aktif (Maks) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 2V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N357R,LF

BAGIAN SAHAM: 16211

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 650mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs(th) (Maks) @ Id: 2V @ 1mA,

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SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

BAGIAN SAHAM: 121978

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA, Rds Aktif (Maks) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

BAGIAN SAHAM: 156233

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, 1.2V Drive, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 180mA, 100mA, Rds Aktif (Maks) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6L61NU,LF

BAGIAN SAHAM: 154751

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A,

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Toshiba Semiconductor and Storage

SSM6N48FU,RF

BAGIAN SAHAM: 3013

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA, Rds Aktif (Maks) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs(th) (Maks) @ Id: 1.5V @ 100µA,

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SSM6N7002BFU,LF

Toshiba Semiconductor and Storage

SSM6N7002BFU,LF

BAGIAN SAHAM: 154781

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 200mA, Rds Aktif (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 3.1V @ 250µA,

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Toshiba Semiconductor and Storage

SSM6N61NU,LF

BAGIAN SAHAM: 117701

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, 1.5V Drive, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6P49NU,LF

BAGIAN SAHAM: 154268

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs(th) (Maks) @ Id: 1.2V @ 1mA,

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SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

BAGIAN SAHAM: 9999

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA, Rds Aktif (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs(th) (Maks) @ Id: 1.1V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6L36FE,LM

BAGIAN SAHAM: 107404

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 500mA, 330mA, Rds Aktif (Maks) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs(th) (Maks) @ Id: 1V @ 1mA,

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TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

BAGIAN SAHAM: 2780

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.7A, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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SSM6N7002BFE(T5L,F

Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

BAGIAN SAHAM: 2844

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 200mA, Rds Aktif (Maks) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 3.1V @ 250µA,

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TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

BAGIAN SAHAM: 2801

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.5A, Rds Aktif (Maks) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8213-H(TE12LQ,M

BAGIAN SAHAM: 2813

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs(th) (Maks) @ Id: 2.3V @ 1mA,

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TPC8208(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q)

BAGIAN SAHAM: 2694

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs(th) (Maks) @ Id: 1.2V @ 200µA,

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TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

BAGIAN SAHAM: 2756

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3A, Rds Aktif (Maks) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs(th) (Maks) @ Id: 1.2V @ 200µA,

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TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

BAGIAN SAHAM: 2781

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 2.3V @ 1mA,

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TPCP8401(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8401(TE85L,F)

BAGIAN SAHAM: 3345

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 100mA, 5.5A, Rds Aktif (Maks) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs(th) (Maks) @ Id: 1.1V @ 100µA,

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TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

BAGIAN SAHAM: 2829

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs(th) (Maks) @ Id: 1.2V @ 200µA,

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Toshiba Semiconductor and Storage

TPC8207(TE12L)

BAGIAN SAHAM: 2650

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs(th) (Maks) @ Id: 1.2V @ 200µA,

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