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Dioda - Kapasitansi Variabel (Varicaps, Varactors)

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  • Dioda - Kapasitansi Variabel (Varicaps, Varactors)
1SV324TPH3F
Toshiba Semiconductor and Storage

1SV324TPH3F

BAGIAN SAHAM: 185359

Kapasitansi @ Vr, F: 12pF @ 4V, 1MHz, Rasio Kapasitansi: 4.3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV277TPH3F
Toshiba Semiconductor and Storage

1SV277TPH3F

BAGIAN SAHAM: 196616

Kapasitansi @ Vr, F: 2.35pF @ 4V, 1MHz, Rasio Kapasitansi: 2.3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV229TPH3F
Toshiba Semiconductor and Storage

1SV229TPH3F

BAGIAN SAHAM: 137721

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 2.5, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: Single,

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1SV304TPH3F
Toshiba Semiconductor and Storage

1SV304TPH3F

BAGIAN SAHAM: 112795

Kapasitansi @ Vr, F: 6.6pF @ 4V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV310TPH3F
Toshiba Semiconductor and Storage

1SV310TPH3F

BAGIAN SAHAM: 155615

Kapasitansi @ Vr, F: 5.45pF @ 4V, 1MHz, Rasio Kapasitansi: 2.1, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV279,H3F
Toshiba Semiconductor and Storage

1SV279,H3F

BAGIAN SAHAM: 171

Kapasitansi @ Vr, F: 6.5pF @ 10V, 1MHz, Rasio Kapasitansi: 2.5, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: Single,

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1SV270TPH3F
Toshiba Semiconductor and Storage

1SV270TPH3F

BAGIAN SAHAM: 199585

Kapasitansi @ Vr, F: 8.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV325,H3F
Toshiba Semiconductor and Storage

1SV325,H3F

BAGIAN SAHAM: 113697

Kapasitansi @ Vr, F: 12pF @ 4V, 1MHz, Rasio Kapasitansi: 4.3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV228TPH3F
Toshiba Semiconductor and Storage

1SV228TPH3F

BAGIAN SAHAM: 173745

Kapasitansi @ Vr, F: 13.7pF @ 8V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C3/C8, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: 1 Pair Common Cathode,

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1SV322(TPH3,F)
Toshiba Semiconductor and Storage

1SV322(TPH3,F)

BAGIAN SAHAM: 134786

Kapasitansi @ Vr, F: 7.1pF @ 4V, 1MHz, Rasio Kapasitansi: 4.3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV239TPH3F
Toshiba Semiconductor and Storage

1SV239TPH3F

BAGIAN SAHAM: 138496

Kapasitansi @ Vr, F: 2pF @ 10V, 1MHz, Rasio Kapasitansi: 2.4, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: Single,

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1SV323,H3F
Toshiba Semiconductor and Storage

1SV323,H3F

BAGIAN SAHAM: 196969

Kapasitansi @ Vr, F: 7.1pF @ 4V, 1MHz, Rasio Kapasitansi: 4.3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV281(TPH3,F)
Toshiba Semiconductor and Storage

1SV281(TPH3,F)

BAGIAN SAHAM: 113541

Kapasitansi @ Vr, F: 8.7pF @ 4V, 1MHz, Rasio Kapasitansi: 2, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV280,H3F
Toshiba Semiconductor and Storage

1SV280,H3F

BAGIAN SAHAM: 138179

Kapasitansi @ Vr, F: 2pF @ 10V, 1MHz, Rasio Kapasitansi: 2.4, Kondisi Rasio Kapasitansi: C2/C10, Tegangan - Puncak Terbalik (Maks): 15V, Tipe Dioda: Single,

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1SV311(TPH3,F)
Toshiba Semiconductor and Storage

1SV311(TPH3,F)

BAGIAN SAHAM: 4833

Kapasitansi @ Vr, F: 5.45pF @ 4V, 1MHz, Rasio Kapasitansi: 2.1, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV282TPH3F
Toshiba Semiconductor and Storage

1SV282TPH3F

BAGIAN SAHAM: 128246

Kapasitansi @ Vr, F: 3pF @ 25V, 1MHz, Rasio Kapasitansi: 12.5, Kondisi Rasio Kapasitansi: C2/C25, Tegangan - Puncak Terbalik (Maks): 34V, Tipe Dioda: Single,

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1SV285TPH3F
Toshiba Semiconductor and Storage

1SV285TPH3F

BAGIAN SAHAM: 158213

Kapasitansi @ Vr, F: 2.35pF @ 4V, 1MHz, Rasio Kapasitansi: 2.3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV305,H3F
Toshiba Semiconductor and Storage

1SV305,H3F

BAGIAN SAHAM: 188801

Kapasitansi @ Vr, F: 6.6pF @ 4V, 1MHz, Rasio Kapasitansi: 3, Kondisi Rasio Kapasitansi: C1/C4, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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1SV314(TPL3,F)
Toshiba Semiconductor and Storage

1SV314(TPL3,F)

BAGIAN SAHAM: 7384

Kapasitansi @ Vr, F: 3.4pF @ 2.5V, 1MHz, Rasio Kapasitansi: 2.5, Kondisi Rasio Kapasitansi: C0.5/C2.5, Tegangan - Puncak Terbalik (Maks): 10V, Tipe Dioda: Single,

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