Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 6

CRG09(TE85L,Q,M)

BAGIAN SAHAM: 193

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 700mA, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CUS04(TE85L,Q,M)

BAGIAN SAHAM: 250

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 700mA, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH08(TE12L,Q,M)

BAGIAN SAHAM: 223

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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Toshiba Semiconductor and Storage

CUS10I40A(TE85L,QM

BAGIAN SAHAM: 162

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 490mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CRG07(TE85L,Q,M)

BAGIAN SAHAM: 183

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 700mA, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 700mA, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH05(TE12L,Q,M)

BAGIAN SAHAM: 178

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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Toshiba Semiconductor and Storage

CRS14(TE85L,Q,M)

BAGIAN SAHAM: 166

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 490mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMS10(TE12L,Q,M)

BAGIAN SAHAM: 130001

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH02(TE16L,Q)

BAGIAN SAHAM: 2615

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS02(TE16L,HIT,Q)

BAGIAN SAHAM: 2547

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.55V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(T6L,CANO-O,Q

BAGIAN SAHAM: 2587

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.55V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(TE16R,Q)

BAGIAN SAHAM: 2557

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH02(TE16R,Q)

BAGIAN SAHAM: 2558

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH05,LMBJQ(O

BAGIAN SAHAM: 2588

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.98V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH07(TE16R,Q)

BAGIAN SAHAM: 2552

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS01(TE16R,Q)

BAGIAN SAHAM: 2596

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.47V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(T6L,SHINA,Q)

BAGIAN SAHAM: 2554

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH01(TE16L,Q)

BAGIAN SAHAM: 2598

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.98V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH05(TE16R,Q)

BAGIAN SAHAM: 2581

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.98V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS03(TE16L,PCD,Q)

BAGIAN SAHAM: 2562

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(TE16R,Q)

BAGIAN SAHAM: 2544

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.55V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(T6L,CLAR,Q)

BAGIAN SAHAM: 2597

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.55V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS02(TE16L,SQC,Q)

BAGIAN SAHAM: 2590

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.55V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH06(TE16L,Q)

BAGIAN SAHAM: 2608

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLH01(TE16R,Q)

BAGIAN SAHAM: 2533

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.98V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS01,LFJFQ(O

BAGIAN SAHAM: 2549

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.47V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03,LNITTOQ(O

BAGIAN SAHAM: 2564

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(T6L,CANO-O,Q

BAGIAN SAHAM: 2613

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH03(TE16L,Q)

BAGIAN SAHAM: 2603

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS03(TE16L,SQC,Q)

BAGIAN SAHAM: 2602

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLS03(TE16L,PSD,Q)

BAGIAN SAHAM: 5263

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH07(TE16L,NMB,Q)

BAGIAN SAHAM: 2547

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CLS03(TE16L,DNSO,Q

BAGIAN SAHAM: 2552

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 10A (DC), Tegangan - Maju (Vf) (Maks) @ If: 0.58V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CLH06(TE16R,Q)

BAGIAN SAHAM: 5332

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Toshiba Semiconductor and Storage

CCS15S30,L3IDTF

BAGIAN SAHAM: 2062

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Toshiba Semiconductor and Storage

CMH05A(TE12L,Q,M)

BAGIAN SAHAM: 102694

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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