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  • Dioda - Penyearah - Tunggal
CMS17(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS17(TE12L,Q,M)

BAGIAN SAHAM: 117

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 480mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS30I40A(TE12L,QM
Toshiba Semiconductor and Storage

CMS30I40A(TE12L,QM

BAGIAN SAHAM: 100

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRF02(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRF02(TE85L,Q,M)

BAGIAN SAHAM: 88

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 3V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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CRS20I30A(TE85L,QM
Toshiba Semiconductor and Storage

CRS20I30A(TE85L,QM

BAGIAN SAHAM: 166057

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 490mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRS12(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRS12(TE85L,Q,M)

BAGIAN SAHAM: 177271

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRS15I30B(TE85L,QM
Toshiba Semiconductor and Storage

CRS15I30B(TE85L,QM

BAGIAN SAHAM: 79

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS15(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS15(TE12L,Q,M)

BAGIAN SAHAM: 163

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMF01(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMF01(TE12L,Q,M)

BAGIAN SAHAM: 194437

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 2V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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CRG04(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRG04(TE85L,Q,M)

BAGIAN SAHAM: 185173

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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CRF03(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRF03(TE85L,Q,M)

BAGIAN SAHAM: 157727

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 700mA, Tegangan - Maju (Vf) (Maks) @ If: 2V @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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CRH01(TE85R,Q,M)
Toshiba Semiconductor and Storage

CRH01(TE85R,Q,M)

BAGIAN SAHAM: 160805

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 980mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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CMS10I30A(TE12L,QM
Toshiba Semiconductor and Storage

CMS10I30A(TE12L,QM

BAGIAN SAHAM: 142

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS07(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS07(TE12L,Q,M)

BAGIAN SAHAM: 160837

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRG03(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRG03(TE85L,Q,M)

BAGIAN SAHAM: 187277

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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CMS10I40A(TE12L,QM
Toshiba Semiconductor and Storage

CMS10I40A(TE12L,QM

BAGIAN SAHAM: 192

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRS03(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRS03(TE85L,Q,M)

BAGIAN SAHAM: 104522

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS20I40A(TE12L,QM
Toshiba Semiconductor and Storage

CMS20I40A(TE12L,QM

BAGIAN SAHAM: 152

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 520mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CES520,L3F
Toshiba Semiconductor and Storage

CES520,L3F

BAGIAN SAHAM: 178640

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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CES521,L3F
Toshiba Semiconductor and Storage

CES521,L3F

BAGIAN SAHAM: 160204

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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TRS12E65C,S1Q
Toshiba Semiconductor and Storage

TRS12E65C,S1Q

BAGIAN SAHAM: 5730

Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 650V, Arus - Rata-Rata Dikoreksi (Io): 12A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 12A, Kecepatan: No Recovery Time > 500mA (Io), Waktu Pemulihan Terbalik (trr): 0ns,

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CUS06(TE85L,Q,M)
Toshiba Semiconductor and Storage

CUS06(TE85L,Q,M)

BAGIAN SAHAM: 236

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS14(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS14(TE12L,Q,M)

BAGIAN SAHAM: 113027

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS10I30A(TE85L,QM
Toshiba Semiconductor and Storage

CUS10I30A(TE85L,QM

BAGIAN SAHAM: 200

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 390mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMS16(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMS16(TE12L,Q,M)

BAGIAN SAHAM: 182845

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMG02(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMG02(TE12L,Q,M)

BAGIAN SAHAM: 177

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 2A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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CUS15I30A(TE85L,QM
Toshiba Semiconductor and Storage

CUS15I30A(TE85L,QM

BAGIAN SAHAM: 158

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 460mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMH01(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMH01(TE12L,Q,M)

BAGIAN SAHAM: 162

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 980mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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CUS03(TE85L,Q,M)
Toshiba Semiconductor and Storage

CUS03(TE85L,Q,M)

BAGIAN SAHAM: 175

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 700mA, Tegangan - Maju (Vf) (Maks) @ If: 520mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CUS05(TE85L,Q,M)
Toshiba Semiconductor and Storage

CUS05(TE85L,Q,M)

BAGIAN SAHAM: 154

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 700mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CRH02(TE85L,Q,M)
Toshiba Semiconductor and Storage

CRH02(TE85L,Q,M)

BAGIAN SAHAM: 159

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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CMH04(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMH04(TE12L,Q,M)

BAGIAN SAHAM: 168712

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 980mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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CMH08A(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMH08A(TE12L,Q,M)

BAGIAN SAHAM: 153282

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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CMC02(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMC02(TE12L,Q,M)

BAGIAN SAHAM: 171

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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CMS30I30A(TE12L,QM
Toshiba Semiconductor and Storage

CMS30I30A(TE12L,QM

BAGIAN SAHAM: 187

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 490mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CMH02A(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMH02A(TE12L,Q,M)

BAGIAN SAHAM: 184

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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CMG03(TE12L,Q,M)
Toshiba Semiconductor and Storage

CMG03(TE12L,Q,M)

BAGIAN SAHAM: 172

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 2A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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