Menu
IndonesiaIndonesia
RFQ / Pesanan
0RFQ / Pesanan

Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

  • Rumah
  •  
  • Transistor - Bipolar (BJT) - Tunggal, Pra-Bias
RN1115,LF(CT
Toshiba Semiconductor and Storage

RN1115,LF(CT

BAGIAN SAHAM: 116693

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1426TE85LF
Toshiba Semiconductor and Storage

RN1426TE85LF

BAGIAN SAHAM: 126115

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V,

Wishlist.
RN1401,LF
Toshiba Semiconductor and Storage

RN1401,LF

BAGIAN SAHAM: 151885

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.
RN1111,LF(CT
Toshiba Semiconductor and Storage

RN1111,LF(CT

BAGIAN SAHAM: 113

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN2317(TE85L,F)
Toshiba Semiconductor and Storage

RN2317(TE85L,F)

BAGIAN SAHAM: 180586

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Wishlist.
RN1130MFV,L3F
Toshiba Semiconductor and Storage

RN1130MFV,L3F

BAGIAN SAHAM: 140527

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Wishlist.
RN2108MFV,L3F
Toshiba Semiconductor and Storage

RN2108MFV,L3F

BAGIAN SAHAM: 149

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN2103(T5L,F,T)
Toshiba Semiconductor and Storage

RN2103(T5L,F,T)

BAGIAN SAHAM: 2147

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN1104T5LFT
Toshiba Semiconductor and Storage

RN1104T5LFT

BAGIAN SAHAM: 2144

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN1409,LF
Toshiba Semiconductor and Storage

RN1409,LF

BAGIAN SAHAM: 120898

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN2302,LF
Toshiba Semiconductor and Storage

RN2302,LF

BAGIAN SAHAM: 145

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN2403,LF
Toshiba Semiconductor and Storage

RN2403,LF

BAGIAN SAHAM: 88

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN2110MFV,L3F
Toshiba Semiconductor and Storage

RN2110MFV,L3F

BAGIAN SAHAM: 174

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN1427TE85LF
Toshiba Semiconductor and Storage

RN1427TE85LF

BAGIAN SAHAM: 108821

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V,

Wishlist.
RN1315,LF
Toshiba Semiconductor and Storage

RN1315,LF

BAGIAN SAHAM: 166

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN2412TE85LF
Toshiba Semiconductor and Storage

RN2412TE85LF

BAGIAN SAHAM: 119344

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN2409,LF
Toshiba Semiconductor and Storage

RN2409,LF

BAGIAN SAHAM: 182087

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN2109ACT(TPL3)
Toshiba Semiconductor and Storage

RN2109ACT(TPL3)

BAGIAN SAHAM: 2148

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN1307,LF
Toshiba Semiconductor and Storage

RN1307,LF

BAGIAN SAHAM: 145

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN1302,LF
Toshiba Semiconductor and Storage

RN1302,LF

BAGIAN SAHAM: 2227

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN2308(TE85L,F)
Toshiba Semiconductor and Storage

RN2308(TE85L,F)

BAGIAN SAHAM: 2150

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN1422TE85LF
Toshiba Semiconductor and Storage

RN1422TE85LF

BAGIAN SAHAM: 124907

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V,

Wishlist.
RN1114(T5L,F,T)
Toshiba Semiconductor and Storage

RN1114(T5L,F,T)

BAGIAN SAHAM: 2223

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1109,LF(CT
Toshiba Semiconductor and Storage

RN1109,LF(CT

BAGIAN SAHAM: 140640

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN2116,LF(CT
Toshiba Semiconductor and Storage

RN2116,LF(CT

BAGIAN SAHAM: 149505

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1110ACT(TPL3)
Toshiba Semiconductor and Storage

RN1110ACT(TPL3)

BAGIAN SAHAM: 3291

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN2310(TE85L,F)
Toshiba Semiconductor and Storage

RN2310(TE85L,F)

BAGIAN SAHAM: 174145

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN2102,LF(CT
Toshiba Semiconductor and Storage

RN2102,LF(CT

BAGIAN SAHAM: 105795

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1111MFV,L3F
Toshiba Semiconductor and Storage

RN1111MFV,L3F

BAGIAN SAHAM: 125

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN2427TE85LF
Toshiba Semiconductor and Storage

RN2427TE85LF

BAGIAN SAHAM: 131174

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V,

Wishlist.
RN1442ATE85LF
Toshiba Semiconductor and Storage

RN1442ATE85LF

BAGIAN SAHAM: 2201

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 300mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 20V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Wishlist.
RN2304(TE85L,F)
Toshiba Semiconductor and Storage

RN2304(TE85L,F)

BAGIAN SAHAM: 192778

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Wishlist.
RN1116(TE85L,F)
Toshiba Semiconductor and Storage

RN1116(TE85L,F)

BAGIAN SAHAM: 2175

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1309(TE85L,F)
Toshiba Semiconductor and Storage

RN1309(TE85L,F)

BAGIAN SAHAM: 2140

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Wishlist.
RN2318(TE85L,F)
Toshiba Semiconductor and Storage

RN2318(TE85L,F)

BAGIAN SAHAM: 150561

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.
RN1113ACT(TPL3)
Toshiba Semiconductor and Storage

RN1113ACT(TPL3)

BAGIAN SAHAM: 2200

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.