Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

18TQ045STRR

BAGIAN SAHAM: 169

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

19TQ015STRR

BAGIAN SAHAM: 117

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 19A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 19A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

18TQ045STRL

BAGIAN SAHAM: 144

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15TQ060STRL

BAGIAN SAHAM: 5027

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 620mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15TQ060STRR

BAGIAN SAHAM: 147

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 620mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15TQ060S

BAGIAN SAHAM: 148

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 620mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15TQ060

BAGIAN SAHAM: 159

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 620mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

150LR5A

BAGIAN SAHAM: 5549

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 471A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

150KSR5

BAGIAN SAHAM: 95

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 471A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

130HFR80PV

BAGIAN SAHAM: 101

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 130A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 500A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

12TQ045STRL

BAGIAN SAHAM: 129

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

12TQ045STRR

BAGIAN SAHAM: 174

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

12TQ035STRL

BAGIAN SAHAM: 156

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

12TQ035STRR

BAGIAN SAHAM: 95

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10TQ035STRR

BAGIAN SAHAM: 171

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10TQ035STRL

BAGIAN SAHAM: 82

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS12STRL

BAGIAN SAHAM: 173

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS12STRR

BAGIAN SAHAM: 98

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS08STRL

BAGIAN SAHAM: 157

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS08STRR

BAGIAN SAHAM: 94

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETF10STRR

BAGIAN SAHAM: 76

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 310ns,

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Vishay Semiconductor Diodes Division

10ETF10STRL

BAGIAN SAHAM: 99

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 310ns,

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Vishay Semiconductor Diodes Division

10ETF10S

BAGIAN SAHAM: 161

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 310ns,

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Vishay Semiconductor Diodes Division

10ETF10FP

BAGIAN SAHAM: 131

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 310ns,

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Vishay Semiconductor Diodes Division

10ETF06STRL

BAGIAN SAHAM: 5088

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 145ns,

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Vishay Semiconductor Diodes Division

10ETF06FP

BAGIAN SAHAM: 145

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 145ns,

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Vishay Semiconductor Diodes Division

10ETF04FP

BAGIAN SAHAM: 152

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 145ns,

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Vishay Semiconductor Diodes Division

10ETF02STRL

BAGIAN SAHAM: 153

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 145ns,

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Vishay Semiconductor Diodes Division

10ETF02FP

BAGIAN SAHAM: 112

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 145ns,

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Vishay Semiconductor Diodes Division

18TQ040

BAGIAN SAHAM: 160

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10TQ035

BAGIAN SAHAM: 71

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 760mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10TQ040

BAGIAN SAHAM: 130

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 760mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

183NQ100R

BAGIAN SAHAM: 112

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

183NQ080

BAGIAN SAHAM: 135

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

182NQ030

BAGIAN SAHAM: 74

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 510mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

181NQ045

BAGIAN SAHAM: 104

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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