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Transistor - IGBT - Modul

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  • Transistor - IGBT - Modul
50MT060ULS
Vishay Semiconductor Diodes Division

50MT060ULS

BAGIAN SAHAM: 371

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 100A, Daya - Maks: 445W, Vce(on) (Maks) @ Vge, Ic: 2.55V @ 15V, 100A,

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50MT060WH
Vishay Semiconductor Diodes Division

50MT060WH

BAGIAN SAHAM: 3045

Tipe IGBT: PT, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 114A, Daya - Maks: 658W, Vce(on) (Maks) @ Vge, Ic: 3.2V @ 15V, 100A,

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VS-GB200TH120N
Vishay Semiconductor Diodes Division

VS-GB200TH120N

BAGIAN SAHAM: 241

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 360A, Daya - Maks: 1136W, Vce(on) (Maks) @ Vge, Ic: 2.35V @ 15V, 200A,

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VS-GB100TH120N
Vishay Semiconductor Diodes Division

VS-GB100TH120N

BAGIAN SAHAM: 318

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 200A, Daya - Maks: 833W, Vce(on) (Maks) @ Vge, Ic: 2.35V @ 15V, 100A,

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VS-GB200TH120U
Vishay Semiconductor Diodes Division

VS-GB200TH120U

BAGIAN SAHAM: 226

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 330A, Daya - Maks: 1316W, Vce(on) (Maks) @ Vge, Ic: 3.6V @ 15V, 200A,

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VS-GB100NH120N
Vishay Semiconductor Diodes Division

VS-GB100NH120N

BAGIAN SAHAM: 352

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 200A, Daya - Maks: 833W, Vce(on) (Maks) @ Vge, Ic: 2.35V @ 15V, 100A,

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VS-GB75TP120U
Vishay Semiconductor Diodes Division

VS-GB75TP120U

BAGIAN SAHAM: 963

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 105A, Daya - Maks: 500W, Vce(on) (Maks) @ Vge, Ic: 3.2V @ 15V, 75A (Typ),

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VS-ETF150Y65U
Vishay Semiconductor Diodes Division

VS-ETF150Y65U

BAGIAN SAHAM: 880

Tipe IGBT: Trench, Konfigurasi: Three Level Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 650V, Arus - Kolektor (Ic) (Maks): 142A, Daya - Maks: 417W, Vce(on) (Maks) @ Vge, Ic: 2.06V @ 15V, 100A,

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VS-GA200TH60S
Vishay Semiconductor Diodes Division

VS-GA200TH60S

BAGIAN SAHAM: 280

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 260A, Daya - Maks: 1042W, Vce(on) (Maks) @ Vge, Ic: 1.9V @ 15V, 200A (Typ),

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CPV363M4K
Vishay Semiconductor Diodes Division

CPV363M4K

BAGIAN SAHAM: 1862

Konfigurasi: Three Phase Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 11A, Daya - Maks: 36W, Vce(on) (Maks) @ Vge, Ic: 2V @ 15V, 11A,

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VS-GT400TH60N
Vishay Semiconductor Diodes Division

VS-GT400TH60N

BAGIAN SAHAM: 181

Tipe IGBT: Trench, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 530A, Daya - Maks: 1600W, Vce(on) (Maks) @ Vge, Ic: 2.05V @ 15V, 400A,

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VS-GB50TP120N
Vishay Semiconductor Diodes Division

VS-GB50TP120N

BAGIAN SAHAM: 1128

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 100A, Daya - Maks: 446W, Vce(on) (Maks) @ Vge, Ic: 2.15V @ 15V, 50A,

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VS-GB15XP120KTPBF
Vishay Semiconductor Diodes Division

VS-GB15XP120KTPBF

BAGIAN SAHAM: 1583

Tipe IGBT: NPT, Konfigurasi: Three Phase Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 30A, Daya - Maks: 187W, Vce(on) (Maks) @ Vge, Ic: 3.66V @ 15V, 30A,

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VS-GB400AH120U
Vishay Semiconductor Diodes Division

VS-GB400AH120U

BAGIAN SAHAM: 463

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 550A, Daya - Maks: 2841W, Vce(on) (Maks) @ Vge, Ic: 3.6V @ 15V, 400A,

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VS-ETL015Y120H
Vishay Semiconductor Diodes Division

VS-ETL015Y120H

BAGIAN SAHAM: 968

Tipe IGBT: Trench, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 22A, Daya - Maks: 89W, Vce(on) (Maks) @ Vge, Ic: 3.03V @ 15V, 15A,

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VS-20MT120UFP
Vishay Semiconductor Diodes Division

VS-20MT120UFP

BAGIAN SAHAM: 1375

Tipe IGBT: NPT, Konfigurasi: Full Bridge Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 40A, Daya - Maks: 240W, Vce(on) (Maks) @ Vge, Ic: 4.66V @ 15V, 40A,

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VS-GB400TH120N
Vishay Semiconductor Diodes Division

VS-GB400TH120N

BAGIAN SAHAM: 369

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 800A, Daya - Maks: 2604W, Vce(on) (Maks) @ Vge, Ic: 1.9V @ 15V, 400A (Typ),

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VS-ENQ030L120S
Vishay Semiconductor Diodes Division

VS-ENQ030L120S

BAGIAN SAHAM: 704

Tipe IGBT: Trench, Konfigurasi: Three Level Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 61A, Daya - Maks: 216W, Vce(on) (Maks) @ Vge, Ic: 2.52V @ 15V, 30A,

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VS-GB100TP120N
Vishay Semiconductor Diodes Division

VS-GB100TP120N

BAGIAN SAHAM: 844

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 200A, Daya - Maks: 650W, Vce(on) (Maks) @ Vge, Ic: 2.2V @ 15V, 100A,

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VS-GA300TD60S
Vishay Semiconductor Diodes Division

VS-GA300TD60S

BAGIAN SAHAM: 525

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 530A, Daya - Maks: 1136W, Vce(on) (Maks) @ Vge, Ic: 1.45V @ 15V, 300A,

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VS-GB300NH120N
Vishay Semiconductor Diodes Division

VS-GB300NH120N

BAGIAN SAHAM: 475

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 500A, Daya - Maks: 1645W, Vce(on) (Maks) @ Vge, Ic: 2.45V @ 15V, 300A,

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VS-GB100LP120N
Vishay Semiconductor Diodes Division

VS-GB100LP120N

BAGIAN SAHAM: 1012

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 200A, Daya - Maks: 658W, Vce(on) (Maks) @ Vge, Ic: 1.8V @ 15V, 100A (Typ),

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VS-GB150LH120N
Vishay Semiconductor Diodes Division

VS-GB150LH120N

BAGIAN SAHAM: 713

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 300A, Daya - Maks: 1389W, Vce(on) (Maks) @ Vge, Ic: 1.87V @ 15V, 150A (Typ),

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VS-GT300YH120N
Vishay Semiconductor Diodes Division

VS-GT300YH120N

BAGIAN SAHAM: 483

Tipe IGBT: Trench, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 341A, Daya - Maks: 1042W, Vce(on) (Maks) @ Vge, Ic: 2.17V @ 15V, 300A (Typ),

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VS-GB150YG120NT
Vishay Semiconductor Diodes Division

VS-GB150YG120NT

BAGIAN SAHAM: 756

Tipe IGBT: NPT, Konfigurasi: Full Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 182A, Daya - Maks: 892W, Vce(on) (Maks) @ Vge, Ic: 4V @ 15V, 200A,

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VS-70MT060WHTAPBF
Vishay Semiconductor Diodes Division

VS-70MT060WHTAPBF

BAGIAN SAHAM: 1353

Tipe IGBT: NPT, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 100A, Daya - Maks: 347W, Vce(on) (Maks) @ Vge, Ic: 3.4V @ 15V, 140A,

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VS-GB90SA120U
Vishay Semiconductor Diodes Division

VS-GB90SA120U

BAGIAN SAHAM: 973

Tipe IGBT: NPT, Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 149A, Daya - Maks: 862W, Vce(on) (Maks) @ Vge, Ic: 3.9V @ 15V, 75A,

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VS-ETF075Y60U
Vishay Semiconductor Diodes Division

VS-ETF075Y60U

BAGIAN SAHAM: 825

Tipe IGBT: Trench, Konfigurasi: Three Level Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 109A, Daya - Maks: 294W, Vce(on) (Maks) @ Vge, Ic: 1.93V @ 15V, 75A,

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VS-GT50TP60N
Vishay Semiconductor Diodes Division

VS-GT50TP60N

BAGIAN SAHAM: 555

Tipe IGBT: Trench, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 85A, Daya - Maks: 208W, Vce(on) (Maks) @ Vge, Ic: 2.1V @ 15V, 50A,

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VS-GB600AH120N
Vishay Semiconductor Diodes Division

VS-GB600AH120N

BAGIAN SAHAM: 352

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 910A, Daya - Maks: 3125W, Vce(on) (Maks) @ Vge, Ic: 1.9V @ 15V, 600A (Typ),

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VS-40MT120UHTAPBF
Vishay Semiconductor Diodes Division

VS-40MT120UHTAPBF

BAGIAN SAHAM: 894

Tipe IGBT: NPT, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 80A, Daya - Maks: 463W, Vce(on) (Maks) @ Vge, Ic: 4.91V @ 15V, 80A,

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VS-GB100YG120NT
Vishay Semiconductor Diodes Division

VS-GB100YG120NT

BAGIAN SAHAM: 804

Tipe IGBT: NPT, Konfigurasi: Full Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 127A, Daya - Maks: 625W, Vce(on) (Maks) @ Vge, Ic: 4V @ 15V, 100A,

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VS-GB200LH120N
Vishay Semiconductor Diodes Division

VS-GB200LH120N

BAGIAN SAHAM: 292

Konfigurasi: Single, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 370A, Daya - Maks: 1562W, Vce(on) (Maks) @ Vge, Ic: 2.07V @ 15V, 200A (Typ),

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CPV362M4U
Vishay Semiconductor Diodes Division

CPV362M4U

BAGIAN SAHAM: 2219

Konfigurasi: Three Phase Inverter, Tegangan - Kerusakan Kolektor Emitter (Maks): 600V, Arus - Kolektor (Ic) (Maks): 7.2A, Daya - Maks: 23W, Vce(on) (Maks) @ Vge, Ic: 1.95V @ 15V, 7.2A,

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VS-GB300TH120U
Vishay Semiconductor Diodes Division

VS-GB300TH120U

BAGIAN SAHAM: 176

Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 530A, Daya - Maks: 2119W, Vce(on) (Maks) @ Vge, Ic: 3.6V @ 15V, 300A,

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VS-GB100TH120U
Vishay Semiconductor Diodes Division

VS-GB100TH120U

BAGIAN SAHAM: 269

Tipe IGBT: NPT, Konfigurasi: Half Bridge, Tegangan - Kerusakan Kolektor Emitter (Maks): 1200V, Arus - Kolektor (Ic) (Maks): 200A, Daya - Maks: 1136W, Vce(on) (Maks) @ Vge, Ic: 3.6V @ 15V, 100A,

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