Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

1N6478-E3/96

BAGIAN SAHAM: 156019

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4934GP-E3/54

BAGIAN SAHAM: 108931

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4001GP-E3/54

BAGIAN SAHAM: 113775

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4005GP-E3/73

BAGIAN SAHAM: 139136

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4001GP-E3/73

BAGIAN SAHAM: 168269

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4007E-E3/53

BAGIAN SAHAM: 151807

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N5817-E3/73

BAGIAN SAHAM: 143012

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N6480-E3/96

BAGIAN SAHAM: 147151

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N6482-E3/96

BAGIAN SAHAM: 162533

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N6483-E3/96

BAGIAN SAHAM: 179529

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5822-E3/54

BAGIAN SAHAM: 102981

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 525mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5624-TR

BAGIAN SAHAM: 158953

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

1N5625-TAP

BAGIAN SAHAM: 129540

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

1N5408-E3/73

BAGIAN SAHAM: 169345

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5402-E3/73

BAGIAN SAHAM: 180343

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5404-E3/73

BAGIAN SAHAM: 170168

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5400-E3/54

BAGIAN SAHAM: 144551

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5819-E3/73

BAGIAN SAHAM: 103666

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5406-E3/73

BAGIAN SAHAM: 121205

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5401-E3/73

BAGIAN SAHAM: 149135

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4936GP-E3/73

BAGIAN SAHAM: 117728

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N5407-E3/73

BAGIAN SAHAM: 108901

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4004GPE-E3/91

BAGIAN SAHAM: 190964

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4007GPE-E3/91

BAGIAN SAHAM: 126552

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N5625-TR

BAGIAN SAHAM: 170965

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

1N5626-TAP

BAGIAN SAHAM: 142723

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

1N5059TR

BAGIAN SAHAM: 184446

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

1N4150W-E3-18

BAGIAN SAHAM: 131065

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 4ns,

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Vishay Semiconductor Diodes Division

1N4937GP-E3/54

BAGIAN SAHAM: 142421

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4006E-E3/54

BAGIAN SAHAM: 129981

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5395-E3/54

BAGIAN SAHAM: 164738

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4936GP-E3/54

BAGIAN SAHAM: 127308

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4935-E3/54

BAGIAN SAHAM: 129076

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4937-E3/54

BAGIAN SAHAM: 104059

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4937-E3/73

BAGIAN SAHAM: 159056

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4448WS-HE3-08

BAGIAN SAHAM: 174024

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 150mA, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 5mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 4ns,

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