Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

181NQ045R

BAGIAN SAHAM: 95

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

181NQ035

BAGIAN SAHAM: 137

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

180NQ045

BAGIAN SAHAM: 156

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

180NQ045R

BAGIAN SAHAM: 137

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

180NQ035

BAGIAN SAHAM: 5037

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

123NQ100R

BAGIAN SAHAM: 91

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 910mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

123NQ080

BAGIAN SAHAM: 5020

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 910mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

122NQ030R

BAGIAN SAHAM: 69

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 490mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

121NQ045R

BAGIAN SAHAM: 130

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

121NQ040

BAGIAN SAHAM: 5051

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

121NQ045

BAGIAN SAHAM: 135

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

121NQ035

BAGIAN SAHAM: 74

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

120NQ045R

BAGIAN SAHAM: 120

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

120NQ040

BAGIAN SAHAM: 155

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

120NQ045

BAGIAN SAHAM: 107

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

120NQ035

BAGIAN SAHAM: 154

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

18TQ035S

BAGIAN SAHAM: 144

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

12TQ035S

BAGIAN SAHAM: 151

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

12TQ045S

BAGIAN SAHAM: 155

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10TQ035S

BAGIAN SAHAM: 130

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10TQ045S

BAGIAN SAHAM: 130

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

150KS5

BAGIAN SAHAM: 62

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 471A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

150L40A

BAGIAN SAHAM: 117

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 471A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS12S

BAGIAN SAHAM: 97

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS12FP

BAGIAN SAHAM: 108

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETS08FP

BAGIAN SAHAM: 36

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETF12

BAGIAN SAHAM: 94

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 310ns,

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Vishay Semiconductor Diodes Division

10ETS12

BAGIAN SAHAM: 117

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 10A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10ETF10

BAGIAN SAHAM: 5083

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.33V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 310ns,

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Vishay Semiconductor Diodes Division

19TQ015STRL

BAGIAN SAHAM: 5042

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 19A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 19A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

19TQ015S

BAGIAN SAHAM: 10049

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 19A, Tegangan - Maju (Vf) (Maks) @ If: 360mV @ 19A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

18TQ045S

BAGIAN SAHAM: 5024

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

185NQ015

BAGIAN SAHAM: 10038

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

18TQ035

BAGIAN SAHAM: 10053

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

183NQ100

BAGIAN SAHAM: 5013

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15MQ040N

BAGIAN SAHAM: 10028

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 490mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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