Dioda - Penyearah - Tunggal

Rumah
Dioda - Penyearah - Tunggal

Vishay Semiconductor Diodes Division

1N3957GPHE3/73

BAGIAN SAHAM: 857

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N3613GPHE3/73

BAGIAN SAHAM: 822

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N3612GPHE3/73

BAGIAN SAHAM: 854

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N3611GPHE3/73

BAGIAN SAHAM: 850

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N5401-E3/54

BAGIAN SAHAM: 139162

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5403-E3/54

BAGIAN SAHAM: 199841

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5822-E3/73

BAGIAN SAHAM: 165662

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 525mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4002GP-M3/73

BAGIAN SAHAM: 436

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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1N4004GPEHE3/54

Vishay Semiconductor Diodes Division

1N4004GPEHE3/54

BAGIAN SAHAM: 5073

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N3085

BAGIAN SAHAM: 5526

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5401/54

BAGIAN SAHAM: 418

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5819-E3/51

BAGIAN SAHAM: 342

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5822-E3/51

BAGIAN SAHAM: 354

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 525mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5408-E3/51

BAGIAN SAHAM: 377

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5818-E3/1

BAGIAN SAHAM: 349

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5407-E3/51

BAGIAN SAHAM: 383

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5406-E3/51

BAGIAN SAHAM: 354

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5404-E3/51

BAGIAN SAHAM: 352

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5402-E3/51

BAGIAN SAHAM: 330

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15ETX06-1

BAGIAN SAHAM: 247

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 3.2V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 32ns,

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Vishay Semiconductor Diodes Division

15ETX06

BAGIAN SAHAM: 207

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 3.2V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 32ns,

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Vishay Semiconductor Diodes Division

15ETL06FP

BAGIAN SAHAM: 217

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.05V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 270ns,

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Vishay Semiconductor Diodes Division

15ETL06-1

BAGIAN SAHAM: 183

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.05V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 270ns,

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Vishay Semiconductor Diodes Division

15ETL06S

BAGIAN SAHAM: 224

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.05V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 270ns,

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Vishay Semiconductor Diodes Division

15ETL06

BAGIAN SAHAM: 235

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.05V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 270ns,

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Vishay Semiconductor Diodes Division

18TQ050

BAGIAN SAHAM: 237

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 18A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 18A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10WQ045FN

BAGIAN SAHAM: 177

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 630mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

15ETH03S

BAGIAN SAHAM: 213

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 40ns,

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Vishay Semiconductor Diodes Division

15ETH03-1

BAGIAN SAHAM: 214

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 40ns,

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Vishay Semiconductor Diodes Division

15ETH06S

BAGIAN SAHAM: 170

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 2.2V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Vishay Semiconductor Diodes Division

15ETH06-1

BAGIAN SAHAM: 242

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 2.2V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Vishay Semiconductor Diodes Division

15ETH03

BAGIAN SAHAM: 234

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 40ns,

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Vishay Semiconductor Diodes Division

15ETH06

BAGIAN SAHAM: 236

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 2.2V @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 35ns,

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Vishay Semiconductor Diodes Division

129NQ135

BAGIAN SAHAM: 156

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 135V, Arus - Rata-Rata Dikoreksi (Io): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1.07V @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

189NQ135

BAGIAN SAHAM: 162

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 135V, Arus - Rata-Rata Dikoreksi (Io): 180A, Tegangan - Maju (Vf) (Maks) @ If: 1.07V @ 180A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

10BQ030

BAGIAN SAHAM: 215

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 420mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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3600

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