Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

1N4005GPEHE3/53

BAGIAN SAHAM: 1941

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4005GPHM3/73

BAGIAN SAHAM: 1936

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4004GP-M3/73

BAGIAN SAHAM: 5247

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4004GPHM3/73

BAGIAN SAHAM: 1932

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4004GPE-M3/73

BAGIAN SAHAM: 1927

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4004GPEHE3/91

BAGIAN SAHAM: 1899

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4004GPEHE3/93

BAGIAN SAHAM: 1895

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4004GPE-E3/93

BAGIAN SAHAM: 130021

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4003GP-M3/73

BAGIAN SAHAM: 1879

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4002GPE-E3/91

BAGIAN SAHAM: 168244

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4002GPEHE3/91

BAGIAN SAHAM: 1920

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4001GPEHE3/91

BAGIAN SAHAM: 1917

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4001GP-M3/73

BAGIAN SAHAM: 1879

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N3611GP-M3/73

BAGIAN SAHAM: 1884

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4001GPHE3/54

BAGIAN SAHAM: 1939

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4148WSFL-G3-08

BAGIAN SAHAM: 1885

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 150mA, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 4ns,

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Vishay Semiconductor Diodes Division

1N4148WFL-G3-08

BAGIAN SAHAM: 1855

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 150mA, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 4ns,

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Vishay Semiconductor Diodes Division

1N5626GP-E3/54

BAGIAN SAHAM: 1621

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

1N5620GPHE3/73

BAGIAN SAHAM: 1693

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N5624GP-E3/54

BAGIAN SAHAM: 5181

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

1N5614GP-E3/54

BAGIAN SAHAM: 5214

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N5627GP-E3/54

BAGIAN SAHAM: 1543

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

1N5625GP-E3/54

BAGIAN SAHAM: 1550

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 5µs,

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Vishay Semiconductor Diodes Division

1N5622GP-E3/54

BAGIAN SAHAM: 1606

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N5618GP-E3/54

BAGIAN SAHAM: 1547

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4448-A

BAGIAN SAHAM: 1348

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 10mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 4ns,

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Vishay Semiconductor Diodes Division

1N4249GP-M3/54

BAGIAN SAHAM: 1322

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4001GP-M3/54

BAGIAN SAHAM: 1314

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N5627GP-E3/73

BAGIAN SAHAM: 1303

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

1N4947GPHM3/73

BAGIAN SAHAM: 1277

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

1N4007GPHM3/73

BAGIAN SAHAM: 5206

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

1N4007GPHE3/53

BAGIAN SAHAM: 1279

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4003GPEHE3/53

BAGIAN SAHAM: 1330

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

1N4942GPHE3/54

BAGIAN SAHAM: 1220

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

1N4937GPHE3/54

BAGIAN SAHAM: 1159

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

1N4007GPEHE3/54

BAGIAN SAHAM: 1156

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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