Transistor - FET, MOSFET - Array

APTML202UM18R010T3AG

BAGIAN SAHAM: 2939

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 109A (Tc), Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 50A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

APTML1002U60R020T3AG

BAGIAN SAHAM: 3301

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 720 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

APTM50DHM65T3G

BAGIAN SAHAM: 3350

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 42A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM120VDA57T3G

BAGIAN SAHAM: 2866

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM10DHM09T3G

BAGIAN SAHAM: 2896

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

APTM100TA35SCTPG

BAGIAN SAHAM: 293

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, Rds Aktif (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTC90AM60T1G

BAGIAN SAHAM: 1142

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 59A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 6mA,

APTC90AM602G

BAGIAN SAHAM: 2917

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 59A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 6mA,

APTC60DSKM70T1G

BAGIAN SAHAM: 2886

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

APTC60AM83BC1G

BAGIAN SAHAM: 2885

Tipe FET: 3 N Channel (Phase Leg + Boost Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 36A, Rds Aktif (Maks) @ Id, Vgs: 83 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 3mA,

APTC60DSKM45T1G

BAGIAN SAHAM: 2935

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

APTC60AM42F2G

BAGIAN SAHAM: 2862

Tipe FET: 2 N Channel (Phase Leg), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 66A, Rds Aktif (Maks) @ Id, Vgs: 42 mOhm @ 33A, 10V, Vgs(th) (Maks) @ Id: 5V @ 6mA,

APTC60AM83B1G

BAGIAN SAHAM: 2932

Tipe FET: 3 N Channel (Phase Leg + Boost Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 36A, Rds Aktif (Maks) @ Id, Vgs: 83 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 3mA,

APTC90H12T1G

BAGIAN SAHAM: 1136

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 30A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 3mA,

APTC90TAM60TPG

BAGIAN SAHAM: 424

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 59A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 6mA,

APTC90HM60T3G

BAGIAN SAHAM: 666

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 59A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 6mA,

APTC90H12T2G

BAGIAN SAHAM: 2898

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 30A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 3mA,

APTC90DSK12T1G

BAGIAN SAHAM: 5403

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 30A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 3mA,

APTC90DDA12T1G

BAGIAN SAHAM: 2849

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 900V, Arus - Pembuangan Kontinu (Id) @ 25°C: 30A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs(th) (Maks) @ Id: 3.5V @ 3mA,

ALD111910SAL

BAGIAN SAHAM: 38839

ALD111910PAL

BAGIAN SAHAM: 38839

AOC2800

BAGIAN SAHAM: 2871

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate,

AON6974A

BAGIAN SAHAM: 2934

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, 30A, Rds Aktif (Maks) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

AON6970

BAGIAN SAHAM: 2849

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 24A, 42A, Rds Aktif (Maks) @ Id, Vgs: 5.4 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.3V @ 250µA,

AON6928

BAGIAN SAHAM: 2893

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, 30A, Rds Aktif (Maks) @ Id, Vgs: 8.2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

AON2809

BAGIAN SAHAM: 2941

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A, Rds Aktif (Maks) @ Id, Vgs: 68 mOhm @ 2A, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

AON6973A

BAGIAN SAHAM: 2858

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, 30A, Rds Aktif (Maks) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

AON7826

BAGIAN SAHAM: 2861

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9A, Rds Aktif (Maks) @ Id, Vgs: 23 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

AO5803E

BAGIAN SAHAM: 2874

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 800 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

AO5800E

BAGIAN SAHAM: 2920

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Rds Aktif (Maks) @ Id, Vgs: 1.6 Ohm @ 400mA, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

AO5600E

BAGIAN SAHAM: 2939

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 600mA, 500mA, Rds Aktif (Maks) @ Id, Vgs: 650 mOhm @ 500mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

AO4618

BAGIAN SAHAM: 192153

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8A, 7A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs(th) (Maks) @ Id: 2.4V @ 250µA,

AON6974

BAGIAN SAHAM: 2877

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, 30A, Rds Aktif (Maks) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

AON6936

BAGIAN SAHAM: 2917

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, 40A, Rds Aktif (Maks) @ Id, Vgs: 4.9 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

AON6938

BAGIAN SAHAM: 2882

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, 33A, Rds Aktif (Maks) @ Id, Vgs: 8.2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

AO6801E

BAGIAN SAHAM: 2875

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A, Rds Aktif (Maks) @ Id, Vgs: 110 mOhm @ 2A, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,