BAGIAN SAHAM: 412
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 55A (Tc), Rds Aktif (Maks) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs(th) (Maks) @ Id: 2.2V @ 2mA (Typ),