Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 55V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.7A, 3.4A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 4.7A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,
Tipe FET: N and P-Channel Complementary, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Rds Aktif (Maks) @ Id, Vgs: 1800 Ohm @ 5V, Vgs(th) (Maks) @ Id: 1V @ 1µA,
Tipe FET: 2 N-Channel (Dual) Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 5.9V, Vgs(th) (Maks) @ Id: 3.35V @ 1µA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.5A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,
Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 90A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 149A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 99A, Rds Aktif (Maks) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 163A, Rds Aktif (Maks) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 180A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 46A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 37A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,
Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 149A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 50A, Rds Aktif (Maks) @ Id, Vgs: 84 mOhm @ 42A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 25A, Rds Aktif (Maks) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 170A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 85A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 175A, Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,
Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 333A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,
Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 175A, Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,
Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 208A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 333A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,
Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 34A, Rds Aktif (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,
Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 14A, Rds Aktif (Maks) @ Id, Vgs: 960 mOhm @ 12A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 16A, Rds Aktif (Maks) @ Id, Vgs: 780 mOhm @ 14A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,
Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 70A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Maks) @ Id: 4V @ 1mA,
Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,
Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,
