Dioda - Penyearah - Tunggal

Rumah
Dioda - Penyearah - Tunggal

Vishay Semiconductor Diodes Division

BYG10D-E3/TR

BAGIAN SAHAM: 163646

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYS10-25-E3/TR

BAGIAN SAHAM: 164701

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 25V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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BYM12-200-E3/96

Vishay Semiconductor Diodes Division

BYM12-200-E3/96

BAGIAN SAHAM: 120803

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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BYS10-45HE3_A/I

Vishay Semiconductor Diodes Division

BYS10-45HE3_A/I

BAGIAN SAHAM: 32260

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BAV20WS-HE3-08

BAGIAN SAHAM: 152834

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV20W-HE3-08

BAGIAN SAHAM: 179080

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS16D-HE3-08

BAGIAN SAHAM: 111335

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 250mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 150mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 6ns,

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BYS10-45-E3/TR3

Vishay Semiconductor Diodes Division

BYS10-45-E3/TR3

BAGIAN SAHAM: 106669

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BAV302-TR

BAGIAN SAHAM: 155089

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAQ333-TR

BAGIAN SAHAM: 142318

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT54W-E3-08

BAGIAN SAHAM: 170231

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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BAS170WS-HE3-08

Vishay Semiconductor Diodes Division

BAS170WS-HE3-08

BAGIAN SAHAM: 136941

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 70V, Arus - Rata-Rata Dikoreksi (Io): 70mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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BYS10-35HE3_A/H

Vishay Semiconductor Diodes Division

BYS10-35HE3_A/H

BAGIAN SAHAM: 34922

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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BYS10-45HE3_A/H

Vishay Semiconductor Diodes Division

BYS10-45HE3_A/H

BAGIAN SAHAM: 34902

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BA158-E3/54

BAGIAN SAHAM: 101393

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

B340LB-E3/52T

BAGIAN SAHAM: 123083

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYG20D-E3/TR

BAGIAN SAHAM: 116833

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYT62-TAP

BAGIAN SAHAM: 158520

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 2400V, Arus - Rata-Rata Dikoreksi (Io): 350mA, Tegangan - Maju (Vf) (Maks) @ If: 3.6V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 5µs,

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Vishay Semiconductor Diodes Division

BYT54M-TAP

BAGIAN SAHAM: 193530

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1.25A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

BAV21-TR

BAGIAN SAHAM: 170950

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYT52M-TAP

BAGIAN SAHAM: 122124

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1.4A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

BAW27-TAP

BAGIAN SAHAM: 153002

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 600mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 400mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BYW36-TR

BAGIAN SAHAM: 121947

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

BYV26D-TAP

BAGIAN SAHAM: 187035

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 2.5V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BY269TAP

BAGIAN SAHAM: 129989

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

BYV26C-TAP

BAGIAN SAHAM: 171441

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 2.5V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

BYW32-TR

BAGIAN SAHAM: 152678

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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Vishay Semiconductor Diodes Division

BYV27-600-TAP

BAGIAN SAHAM: 122331

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

BYW55-TAP

BAGIAN SAHAM: 144972

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYX86TAP

BAGIAN SAHAM: 183532

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BAW27-TR

BAGIAN SAHAM: 134544

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 600mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 400mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BYV26B-TAP

BAGIAN SAHAM: 169957

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 2.5V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

BYV38-TAP

BAGIAN SAHAM: 177773

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYV26D-TR

BAGIAN SAHAM: 121386

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 2.5V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYV27-150-TAP

BAGIAN SAHAM: 139081

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 165V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.07V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYV27-200-TAP

BAGIAN SAHAM: 181381

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.07V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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3600

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