Dioda - Penyearah - Tunggal

Rumah
Dioda - Penyearah - Tunggal

Vishay Semiconductor Diodes Division

BYG10YHE3_A/H

BAGIAN SAHAM: 17865

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10J-E3/TR

BAGIAN SAHAM: 149622

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BY252P-E3/54

BAGIAN SAHAM: 145929

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BY253P-E3/54

BAGIAN SAHAM: 127396

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BAV19W-E3-08

BAGIAN SAHAM: 102442

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BA159-E3/73

BAGIAN SAHAM: 135265

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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BAS70-02V-V-G-08

Vishay Semiconductor Diodes Division

BAS70-02V-V-G-08

BAGIAN SAHAM: 174638

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 70V, Arus - Rata-Rata Dikoreksi (Io): 100mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAS19-E3-08

BAGIAN SAHAM: 165592

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 50ns,

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BYM11-400-E3/96

Vishay Semiconductor Diodes Division

BYM11-400-E3/96

BAGIAN SAHAM: 154481

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BAS21-HE3-08

BAGIAN SAHAM: 108310

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 50ns,

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BYM10-800-E3/96

Vishay Semiconductor Diodes Division

BYM10-800-E3/96

BAGIAN SAHAM: 191060

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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BYM10-600-E3/96

Vishay Semiconductor Diodes Division

BYM10-600-E3/96

BAGIAN SAHAM: 119015

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B360B-E3/5BT

BAGIAN SAHAM: 164916

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYG24D-E3/TR

BAGIAN SAHAM: 162130

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

B340A-M3/61T

BAGIAN SAHAM: 143315

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 550mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

B120-E3/61T

BAGIAN SAHAM: 144292

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 520mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYW82-TR

BAGIAN SAHAM: 191605

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

B160-E3/5AT

BAGIAN SAHAM: 189351

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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BYS11-90-E3/TR3

Vishay Semiconductor Diodes Division

BYS11-90-E3/TR3

BAGIAN SAHAM: 136594

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYW178-TR

BAGIAN SAHAM: 166134

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.9V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 60ns,

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Vishay Semiconductor Diodes Division

BYG20D-E3/TR3

BAGIAN SAHAM: 156933

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYT56M-TAP

BAGIAN SAHAM: 190205

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

B130-E3/5AT

BAGIAN SAHAM: 180095

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 520mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYT56M-TR

BAGIAN SAHAM: 181153

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 100ns,

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Vishay Semiconductor Diodes Division

BAQ134-GS08

BAGIAN SAHAM: 114583

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BYV28-600-TAP

BAGIAN SAHAM: 141378

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 210ns,

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Vishay Semiconductor Diodes Division

BYG21K-E3/TR3

BAGIAN SAHAM: 119683

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYV28-200-TAP

BAGIAN SAHAM: 146611

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

BYG10YHM3_A/I

BAGIAN SAHAM: 20320

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BAQ34-GS08

BAGIAN SAHAM: 163973

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BYG10YHE3_A/I

BAGIAN SAHAM: 20300

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYW86-TR

BAGIAN SAHAM: 177974

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

BY255P-E3/73

BAGIAN SAHAM: 105347

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BAS40-00-E3-08

BAGIAN SAHAM: 177694

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 40mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT43WS-E3-08

BAGIAN SAHAM: 163088

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT43WS-HE3-08

BAGIAN SAHAM: 187575

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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3600

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