Dioda - Penyearah - Tunggal

Rumah
Dioda - Penyearah - Tunggal

Vishay Semiconductor Diodes Division

BAV21WS-G3-08

BAGIAN SAHAM: 174085

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYG10Y-M3/TR

BAGIAN SAHAM: 113865

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG21K-E3/TR

BAGIAN SAHAM: 165220

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BAS16D-E3-08

BAGIAN SAHAM: 126850

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 250mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 150mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BAT54W-G3-08

BAGIAN SAHAM: 125289

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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BYM11-400-E3/97

Vishay Semiconductor Diodes Division

BYM11-400-E3/97

BAGIAN SAHAM: 128278

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BAV21WS-HE3-18

BAGIAN SAHAM: 143333

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS281-GS08

BAGIAN SAHAM: 182315

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 30mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAS16WS-HE3-18

BAGIAN SAHAM: 192905

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 250mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 150mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BYW36-TAP

BAGIAN SAHAM: 135103

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 200ns,

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BYM10-200-E3/97

Vishay Semiconductor Diodes Division

BYM10-200-E3/97

BAGIAN SAHAM: 138454

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM36E-TAP

BAGIAN SAHAM: 193769

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 2.9A, Tegangan - Maju (Vf) (Maks) @ If: 1.78V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYV28-600-TR

BAGIAN SAHAM: 134642

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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BAS170WS-HE3-18

Vishay Semiconductor Diodes Division

BAS170WS-HE3-18

BAGIAN SAHAM: 133505

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 70V, Arus - Rata-Rata Dikoreksi (Io): 70mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAQ335-TR

BAGIAN SAHAM: 190878

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 125V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BYV27-200-TR

BAGIAN SAHAM: 153878

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.07V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BAS83-GS08

BAGIAN SAHAM: 115843

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 30mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BY228-15TAP

BAGIAN SAHAM: 193803

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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Vishay Semiconductor Diodes Division

BAV21-TAP

BAGIAN SAHAM: 150982

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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BYM10-400-E3/97

Vishay Semiconductor Diodes Division

BYM10-400-E3/97

BAGIAN SAHAM: 109607

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BAQ133-GS08

BAGIAN SAHAM: 147679

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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BAT54-02V-V-G-18

Vishay Semiconductor Diodes Division

BAT54-02V-V-G-18

BAGIAN SAHAM: 175247

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAV301-TR

BAGIAN SAHAM: 119517

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS20-E3-18

BAGIAN SAHAM: 176831

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYV28-100-TAP

BAGIAN SAHAM: 163502

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 30ns,

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Vishay Semiconductor Diodes Division

B360A-E3/61T

BAGIAN SAHAM: 170389

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYG10YHM3_A/H

BAGIAN SAHAM: 23260

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BA157GP-E3/54

BAGIAN SAHAM: 181076

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BAS16WS-G3-08

BAGIAN SAHAM: 190132

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 250mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 150mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BAV19WS-HE3-08

BAGIAN SAHAM: 102266

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS21-E3-08

BAGIAN SAHAM: 101367

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV21W-HE3-08

BAGIAN SAHAM: 110111

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT46W-G3-08

BAGIAN SAHAM: 105403

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 150mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 250mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAV100-GS08

BAGIAN SAHAM: 115219

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYT78-TAP

BAGIAN SAHAM: 181219

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

BYG10G-E3/TR

BAGIAN SAHAM: 136486

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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3600

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