Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

BA157GPHE3/73

BAGIAN SAHAM: 877

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYWE29-200-E3/45

BAGIAN SAHAM: 144945

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYM12-400-E3/96

BAGIAN SAHAM: 126021

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS16-E3-08

BAGIAN SAHAM: 103937

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 75V, Arus - Rata-Rata Dikoreksi (Io): 150mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 150mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 6ns,

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Vishay Semiconductor Diodes Division

BYM12-50-E3/96

BAGIAN SAHAM: 163510

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYM12-100-E3/96

BAGIAN SAHAM: 196039

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYM11-600-E3/96

BAGIAN SAHAM: 144073

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

BYM07-100HE3/83

BAGIAN SAHAM: 5138

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BY251GP-E3/73

BAGIAN SAHAM: 315

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

B130-E3/61T

BAGIAN SAHAM: 183563

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 520mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYG24J-E3/TR

BAGIAN SAHAM: 143181

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG20G-E3/TR

BAGIAN SAHAM: 161542

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYS10-35-E3/TR

BAGIAN SAHAM: 141652

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYG20J/54

BAGIAN SAHAM: 202

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BY251P-E3/54

BAGIAN SAHAM: 119112

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BY255P-E3/54

BAGIAN SAHAM: 163512

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1300V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 3µs,

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Vishay Semiconductor Diodes Division

BYM13-40-E3/96

BAGIAN SAHAM: 166090

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM11-100-E3/96

BAGIAN SAHAM: 193526

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYM10-100-E3/96

BAGIAN SAHAM: 172161

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM10-1000-E3/96

BAGIAN SAHAM: 173667

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BY228TR

BAGIAN SAHAM: 184580

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1500V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 20µs,

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Vishay Semiconductor Diodes Division

BY268TR

BAGIAN SAHAM: 150515

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 400mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 400ns,

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Vishay Semiconductor Diodes Division

BYM07-300-E3/98

BAGIAN SAHAM: 127502

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 500mA, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 500mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYM10-800-E3/97

BAGIAN SAHAM: 194682

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM10-1000-E3/97

BAGIAN SAHAM: 185832

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYW86TAP

BAGIAN SAHAM: 186884

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 7.5µs,

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Vishay Semiconductor Diodes Division

BYW56-TAP

BAGIAN SAHAM: 183601

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYM10-600-E3/97

BAGIAN SAHAM: 194021

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BY203-20STAP

BAGIAN SAHAM: 170989

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 2000V, Arus - Rata-Rata Dikoreksi (Io): 250mA, Tegangan - Maju (Vf) (Maks) @ If: 2.4V @ 200mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BY269TR

BAGIAN SAHAM: 115634

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 800mA, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 400mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 400ns,

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Vishay Semiconductor Diodes Division

BAS82-GS08

BAGIAN SAHAM: 177556

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 30mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BYV38-TR

BAGIAN SAHAM: 130335

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 300ns,

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Vishay Semiconductor Diodes Division

BYM11-1000-E3/97

BAGIAN SAHAM: 124350

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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Vishay Semiconductor Diodes Division

BYM13-40-E3/97

BAGIAN SAHAM: 153086

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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Vishay Semiconductor Diodes Division

BYM11-600-E3/97

BAGIAN SAHAM: 125337

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 250ns,

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Vishay Semiconductor Diodes Division

BYG24G-E3/TR

BAGIAN SAHAM: 132088

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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