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Transistor - Bipolar (BJT) - Tunggal, Pra-Bias

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  • Transistor - Bipolar (BJT) - Tunggal, Pra-Bias
RN1104,LF(CT
Toshiba Semiconductor and Storage

RN1104,LF(CT

BAGIAN SAHAM: 176974

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN1116MFV,L3F
Toshiba Semiconductor and Storage

RN1116MFV,L3F

BAGIAN SAHAM: 1741

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2110ACT(TPL3)
Toshiba Semiconductor and Storage

RN2110ACT(TPL3)

BAGIAN SAHAM: 116110

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1309,LF
Toshiba Semiconductor and Storage

RN1309,LF

BAGIAN SAHAM: 1726

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

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RN2112ACT(TPL3)
Toshiba Semiconductor and Storage

RN2112ACT(TPL3)

BAGIAN SAHAM: 133617

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1119MFV,L3F
Toshiba Semiconductor and Storage

RN1119MFV,L3F

BAGIAN SAHAM: 1717

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2421(TE85L,F)
Toshiba Semiconductor and Storage

RN2421(TE85L,F)

BAGIAN SAHAM: 103457

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 800mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V,

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RN1301,LF
Toshiba Semiconductor and Storage

RN1301,LF

BAGIAN SAHAM: 114770

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

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RN2113ACT(TPL3)
Toshiba Semiconductor and Storage

RN2113ACT(TPL3)

BAGIAN SAHAM: 192815

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Wishlist.
RN1113MFV,L3F
Toshiba Semiconductor and Storage

RN1113MFV,L3F

BAGIAN SAHAM: 1776

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN2105ACT(TPL3)
Toshiba Semiconductor and Storage

RN2105ACT(TPL3)

BAGIAN SAHAM: 181928

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2111ACT(TPL3)
Toshiba Semiconductor and Storage

RN2111ACT(TPL3)

BAGIAN SAHAM: 185360

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1132MFV,L3F
Toshiba Semiconductor and Storage

RN1132MFV,L3F

BAGIAN SAHAM: 1709

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 200 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

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RN1115MFV,L3F
Toshiba Semiconductor and Storage

RN1115MFV,L3F

BAGIAN SAHAM: 116839

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN2103ACT(TPL3)
Toshiba Semiconductor and Storage

RN2103ACT(TPL3)

BAGIAN SAHAM: 125855

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 80mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN1118MFV,L3F
Toshiba Semiconductor and Storage

RN1118MFV,L3F

BAGIAN SAHAM: 3186

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

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RN1406,LF
Toshiba Semiconductor and Storage

RN1406,LF

BAGIAN SAHAM: 138320

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

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RN2109MFV,L3F
Toshiba Semiconductor and Storage

RN2109MFV,L3F

BAGIAN SAHAM: 1723

Jenis Transistor:: PNP - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

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RN1402,LF
Toshiba Semiconductor and Storage

RN1402,LF

BAGIAN SAHAM: 154084

Jenis Transistor:: NPN - Pre-Biased, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Wishlist.