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Transistor - Bipolar (BJT) - Array, Pra-Bias

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  • Transistor - Bipolar (BJT) - Array, Pra-Bias
NSBC114YDXV6T1G
ON Semiconductor

NSBC114YDXV6T1G

BAGIAN SAHAM: 163781

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5237DW1T1
ON Semiconductor

MUN5237DW1T1

BAGIAN SAHAM: 1518

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5335DW1T2G
ON Semiconductor

MUN5335DW1T2G

BAGIAN SAHAM: 164842

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVB114YPDXV6T1G
ON Semiconductor

NSVB114YPDXV6T1G

BAGIAN SAHAM: 116749

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5115DW1T1G
ON Semiconductor

SMUN5115DW1T1G

BAGIAN SAHAM: 128974

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC124XPDXV6T1G
ON Semiconductor

NSBC124XPDXV6T1G

BAGIAN SAHAM: 1461

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVBC114EPDXV6T1G
ON Semiconductor

NSVBC114EPDXV6T1G

BAGIAN SAHAM: 131643

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MUN5312DW1T1
ON Semiconductor

MUN5312DW1T1

BAGIAN SAHAM: 1526

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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MUN5236DW1T1G
ON Semiconductor

MUN5236DW1T1G

BAGIAN SAHAM: 90859

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5112DW1T1G
ON Semiconductor

MUN5112DW1T1G

BAGIAN SAHAM: 58075

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC123TDP6T5G
ON Semiconductor

NSBC123TDP6T5G

BAGIAN SAHAM: 120018

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSTB1003DXV5T1G
ON Semiconductor

NSTB1003DXV5T1G

BAGIAN SAHAM: 1527

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual),

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EMA6DXV5T5G
ON Semiconductor

EMA6DXV5T5G

BAGIAN SAHAM: 1485

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC114EPDXV6T1G
ON Semiconductor

NSBC114EPDXV6T1G

BAGIAN SAHAM: 138112

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MUN5114DW1T1G
ON Semiconductor

MUN5114DW1T1G

BAGIAN SAHAM: 128956

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UMA4NT1
ON Semiconductor

UMA4NT1

BAGIAN SAHAM: 1408

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBA143ZDXV6T1
ON Semiconductor

NSBA143ZDXV6T1

BAGIAN SAHAM: 1412

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5312DW1T1G
ON Semiconductor

SMUN5312DW1T1G

BAGIAN SAHAM: 126786

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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MUN5333DW1T1G
ON Semiconductor

MUN5333DW1T1G

BAGIAN SAHAM: 124275

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5114DW1T1
ON Semiconductor

MUN5114DW1T1

BAGIAN SAHAM: 1502

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC123JDXV6T1
ON Semiconductor

NSBC123JDXV6T1

BAGIAN SAHAM: 1414

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC124EPDXV6T1
ON Semiconductor

NSBC124EPDXV6T1

BAGIAN SAHAM: 1455

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBA143TDXV6T1
ON Semiconductor

NSBA143TDXV6T1

BAGIAN SAHAM: 1435

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC143TDXV6T1
ON Semiconductor

NSBC143TDXV6T1

BAGIAN SAHAM: 1400

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSVMUN531335DW1T1G
ON Semiconductor

NSVMUN531335DW1T1G

BAGIAN SAHAM: 161762

Jenis Transistor:: 1 NPN Pre-Biased, 1 PNP, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5212DW1T1G
ON Semiconductor

NSVMUN5212DW1T1G

BAGIAN SAHAM: 111873

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSTB60BDW1T1G
ON Semiconductor

NSTB60BDW1T1G

BAGIAN SAHAM: 116194

Jenis Transistor:: 1 NPN Pre-Biased, 1 PNP, Arus - Kolektor (Ic) (Maks): 150mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V,

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NSBC113EPDXV6T1G
ON Semiconductor

NSBC113EPDXV6T1G

BAGIAN SAHAM: 191549

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSBA143ZDXV6T1G
ON Semiconductor

NSBA143ZDXV6T1G

BAGIAN SAHAM: 13232

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC143ZPDXV6T5G
ON Semiconductor

NSBC143ZPDXV6T5G

BAGIAN SAHAM: 1414

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5335DW1T2G
ON Semiconductor

SMUN5335DW1T2G

BAGIAN SAHAM: 183726

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5232DW1T1G
ON Semiconductor

MUN5232DW1T1G

BAGIAN SAHAM: 132657

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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MUN5116DW1T1
ON Semiconductor

MUN5116DW1T1

BAGIAN SAHAM: 3233

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSVUMC3NT1G
ON Semiconductor

NSVUMC3NT1G

BAGIAN SAHAM: 183136

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSBA144EDXV6T5
ON Semiconductor

NSBA144EDXV6T5

BAGIAN SAHAM: 1491

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC115TPDP6T5G
ON Semiconductor

NSBC115TPDP6T5G

BAGIAN SAHAM: 193516

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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