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Transistor - Bipolar (BJT) - Array, Pra-Bias

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  • Transistor - Bipolar (BJT) - Array, Pra-Bias
MUN5331DW1T1G
ON Semiconductor

MUN5331DW1T1G

BAGIAN SAHAM: 1460

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBC113EPDXV6T1
ON Semiconductor

NSBC113EPDXV6T1

BAGIAN SAHAM: 1467

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSBC123JDP6T5G
ON Semiconductor

NSBC123JDP6T5G

BAGIAN SAHAM: 161656

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSB1706DMW5T1
ON Semiconductor

NSB1706DMW5T1

BAGIAN SAHAM: 1530

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5333DW1T1
ON Semiconductor

MUN5333DW1T1

BAGIAN SAHAM: 1513

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC144EDXV6T1G
ON Semiconductor

NSBC144EDXV6T1G

BAGIAN SAHAM: 157107

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5235DW1T1
ON Semiconductor

MUN5235DW1T1

BAGIAN SAHAM: 1487

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC123TPDP6T5G
ON Semiconductor

NSBC123TPDP6T5G

BAGIAN SAHAM: 144483

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5213DW1T3G
ON Semiconductor

MUN5213DW1T3G

BAGIAN SAHAM: 114310

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5212DW1T1G
ON Semiconductor

MUN5212DW1T1G

BAGIAN SAHAM: 183961

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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MUN5233DW1T1G
ON Semiconductor

MUN5233DW1T1G

BAGIAN SAHAM: 115589

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMD5DXV6T1
ON Semiconductor

EMD5DXV6T1

BAGIAN SAHAM: 1409

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSBA123EDXV6T1
ON Semiconductor

NSBA123EDXV6T1

BAGIAN SAHAM: 1419

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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MUN5135DW1T1G
ON Semiconductor

MUN5135DW1T1G

BAGIAN SAHAM: 180737

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC113EDXV6T1
ON Semiconductor

NSBC113EDXV6T1

BAGIAN SAHAM: 1420

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSTB1002DXV5T1
ON Semiconductor

NSTB1002DXV5T1

BAGIAN SAHAM: 1514

Jenis Transistor:: 1 NPN Pre-Biased, 1 PNP, Arus - Kolektor (Ic) (Maks): 100mA, 200mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, 40V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V,

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MUN5234DW1T1G
ON Semiconductor

MUN5234DW1T1G

BAGIAN SAHAM: 1437

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBA124EDXV6T1G
ON Semiconductor

NSBA124EDXV6T1G

BAGIAN SAHAM: 25827

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wishlist.
NSBC123JPDP6T5G
ON Semiconductor

NSBC123JPDP6T5G

BAGIAN SAHAM: 106367

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC124XDXV6T1
ON Semiconductor

NSBC124XDXV6T1

BAGIAN SAHAM: 1489

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5312DW1T2G
ON Semiconductor

NSVMUN5312DW1T2G

BAGIAN SAHAM: 105116

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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MUN5313DW1T1G
ON Semiconductor

MUN5313DW1T1G

BAGIAN SAHAM: 142403

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5332DW1T1
ON Semiconductor

MUN5332DW1T1

BAGIAN SAHAM: 1515

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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SMUN5233DW1T1G
ON Semiconductor

SMUN5233DW1T1G

BAGIAN SAHAM: 139425

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5313DW1T1G
ON Semiconductor

SMUN5313DW1T1G

BAGIAN SAHAM: 106685

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC143ZDXV6T5G
ON Semiconductor

NSBC143ZDXV6T5G

BAGIAN SAHAM: 126380

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMA6DXV5T1G
ON Semiconductor

EMA6DXV5T1G

BAGIAN SAHAM: 3146

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBA115EDXV6T1G
ON Semiconductor

NSBA115EDXV6T1G

BAGIAN SAHAM: 107413

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA114EDXV6T1G
ON Semiconductor

NSBA114EDXV6T1G

BAGIAN SAHAM: 104326

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSBC114TDXV6T5
ON Semiconductor

NSBC114TDXV6T5

BAGIAN SAHAM: 1473

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC143ZDP6T5G
ON Semiconductor

NSBC143ZDP6T5G

BAGIAN SAHAM: 129909

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA114EDXV6T5G
ON Semiconductor

NSBA114EDXV6T5G

BAGIAN SAHAM: 1467

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MUN5315DW1T1
ON Semiconductor

MUN5315DW1T1

BAGIAN SAHAM: 1456

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5330DW1T1G
ON Semiconductor

MUN5330DW1T1G

BAGIAN SAHAM: 161630

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

Wishlist.
NSBC114EPDP6T5G
ON Semiconductor

NSBC114EPDP6T5G

BAGIAN SAHAM: 172427

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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MUN5135DW1T1
ON Semiconductor

MUN5135DW1T1

BAGIAN SAHAM: 1492

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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