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Transistor - Bipolar (BJT) - Array, Pra-Bias

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  • Transistor - Bipolar (BJT) - Array, Pra-Bias
NSBA124EDXV6T1
ON Semiconductor

NSBA124EDXV6T1

BAGIAN SAHAM: 1456

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSBC144EPDXV6T5
ON Semiconductor

NSBC144EPDXV6T5

BAGIAN SAHAM: 1405

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMG2DXV5T5
ON Semiconductor

EMG2DXV5T5

BAGIAN SAHAM: 3242

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBC115EDXV6T1G
ON Semiconductor

NSBC115EDXV6T1G

BAGIAN SAHAM: 129082

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSVMUN5316DW1T1G
ON Semiconductor

NSVMUN5316DW1T1G

BAGIAN SAHAM: 160200

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSB1706DMW5T1G
ON Semiconductor

NSB1706DMW5T1G

BAGIAN SAHAM: 136591

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5133DW1T1G
ON Semiconductor

MUN5133DW1T1G

BAGIAN SAHAM: 183679

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5316DW1T1
ON Semiconductor

MUN5316DW1T1

BAGIAN SAHAM: 1532

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSM21156DW6T1G
ON Semiconductor

NSM21156DW6T1G

BAGIAN SAHAM: 1463

Jenis Transistor:: 1 NPN Pre-Biased, 1 PNP, Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, 65V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V,

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MUN5130DW1T1G
ON Semiconductor

MUN5130DW1T1G

BAGIAN SAHAM: 181618

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5230DW1T1G
ON Semiconductor

MUN5230DW1T1G

BAGIAN SAHAM: 155743

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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NSTB1004DXV5T1G
ON Semiconductor

NSTB1004DXV5T1G

BAGIAN SAHAM: 3211

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual),

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NSBC114YPDP6T5G
ON Semiconductor

NSBC114YPDP6T5G

BAGIAN SAHAM: 167686

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
MUN5230DW1T1
ON Semiconductor

MUN5230DW1T1

BAGIAN SAHAM: 1467

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5136DW1T1
ON Semiconductor

MUN5136DW1T1

BAGIAN SAHAM: 1413

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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UMA4NT1G
ON Semiconductor

UMA4NT1G

BAGIAN SAHAM: 1478

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBA123EDXV6T1G
ON Semiconductor

NSBA123EDXV6T1G

BAGIAN SAHAM: 64095

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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SMUN5214DW1T1G
ON Semiconductor

SMUN5214DW1T1G

BAGIAN SAHAM: 115714

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVBC114YPDXV65G
ON Semiconductor

NSVBC114YPDXV65G

BAGIAN SAHAM: 1485

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5230DW1T1G
ON Semiconductor

SMUN5230DW1T1G

BAGIAN SAHAM: 174998

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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SMUN5131DW1T1G
ON Semiconductor

SMUN5131DW1T1G

BAGIAN SAHAM: 110079

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA144EDP6T5G
ON Semiconductor

NSBA144EDP6T5G

BAGIAN SAHAM: 162633

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5137DW1T1G
ON Semiconductor

MUN5137DW1T1G

BAGIAN SAHAM: 3198

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5315DW1T1G
ON Semiconductor

MUN5315DW1T1G

BAGIAN SAHAM: 150495

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSBC123EDXV6T1
ON Semiconductor

NSBC123EDXV6T1

BAGIAN SAHAM: 1458

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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MUN5212DW1T1
ON Semiconductor

MUN5212DW1T1

BAGIAN SAHAM: 1497

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

Wishlist.
NSBC124EPDXV6T1G
ON Semiconductor

NSBC124EPDXV6T1G

BAGIAN SAHAM: 188714

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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EMC5DXV5T1G
ON Semiconductor

EMC5DXV5T1G

BAGIAN SAHAM: 130128

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSVB123JPDXV6T1G
ON Semiconductor

NSVB123JPDXV6T1G

BAGIAN SAHAM: 107622

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA115TDP6T5G
ON Semiconductor

NSBA115TDP6T5G

BAGIAN SAHAM: 146030

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5232DW1T1
ON Semiconductor

MUN5232DW1T1

BAGIAN SAHAM: 1444

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSBC123JPDXV6T1
ON Semiconductor

NSBC123JPDXV6T1

BAGIAN SAHAM: 1461

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMD5DXV6T5G
ON Semiconductor

EMD5DXV6T5G

BAGIAN SAHAM: 162821

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, 47 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V,

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NSBA114YDP6T5G
ON Semiconductor

NSBA114YDP6T5G

BAGIAN SAHAM: 197883

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVUMC2NT1G
ON Semiconductor

NSVUMC2NT1G

BAGIAN SAHAM: 193262

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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SMUN5235DW1T3G
ON Semiconductor

SMUN5235DW1T3G

BAGIAN SAHAM: 170254

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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