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Transistor - Bipolar (BJT) - Array, Pra-Bias

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  • Transistor - Bipolar (BJT) - Array, Pra-Bias
SMUN5116DW1T1G
ON Semiconductor

SMUN5116DW1T1G

BAGIAN SAHAM: 119414

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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SMUN5211DW1T1G
ON Semiconductor

SMUN5211DW1T1G

BAGIAN SAHAM: 152766

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSVMUN5333DW1T3G
ON Semiconductor

NSVMUN5333DW1T3G

BAGIAN SAHAM: 107424

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5232DW1T1G
ON Semiconductor

SMUN5232DW1T1G

BAGIAN SAHAM: 125478

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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EMG2DXV5T5G
ON Semiconductor

EMG2DXV5T5G

BAGIAN SAHAM: 175728

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSB4904DW1T1G
ON Semiconductor

NSB4904DW1T1G

BAGIAN SAHAM: 119540

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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SMUN5330DW1T1G
ON Semiconductor

SMUN5330DW1T1G

BAGIAN SAHAM: 197015

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 1 kOhms, Resistor - Basis Emitor (R2): 1 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V,

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MUN5235DW1T1G
ON Semiconductor

MUN5235DW1T1G

BAGIAN SAHAM: 143243

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSTB1002DXV5T1G
ON Semiconductor

NSTB1002DXV5T1G

BAGIAN SAHAM: 198611

Jenis Transistor:: 1 NPN Pre-Biased, 1 PNP, Arus - Kolektor (Ic) (Maks): 100mA, 200mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, 40V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V,

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NSBA114TDP6T5G
ON Semiconductor

NSBA114TDP6T5G

BAGIAN SAHAM: 172501

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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NSVMUN5233DW1T3G
ON Semiconductor

NSVMUN5233DW1T3G

BAGIAN SAHAM: 143904

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5136DW1T1G
ON Semiconductor

MUN5136DW1T1G

BAGIAN SAHAM: 137681

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 100 kOhms, Resistor - Basis Emitor (R2): 100 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVIMD10AMT1G
ON Semiconductor

NSVIMD10AMT1G

BAGIAN SAHAM: 27

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 500mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 13 kOhms, 130 Ohms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V / 68 @ 100mA, 5V,

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NSVMUN5111DW1T3G
ON Semiconductor

NSVMUN5111DW1T3G

BAGIAN SAHAM: 166215

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSVBC124EPDXV6T1G
ON Semiconductor

NSVBC124EPDXV6T1G

BAGIAN SAHAM: 133

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVMUN5314DW1T3G
ON Semiconductor

NSVMUN5314DW1T3G

BAGIAN SAHAM: 172202

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

Wishlist.
NSBA124XDXV6T1G
ON Semiconductor

NSBA124XDXV6T1G

BAGIAN SAHAM: 140822

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC114TDXV6T1G
ON Semiconductor

NSBC114TDXV6T1G

BAGIAN SAHAM: 164848

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5132DW1T1G
ON Semiconductor

MUN5132DW1T1G

BAGIAN SAHAM: 128735

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V,

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NSVBC114EDXV6T1G
ON Semiconductor

NSVBC114EDXV6T1G

BAGIAN SAHAM: 179563

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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SMUN5311DW1T2G
ON Semiconductor

SMUN5311DW1T2G

BAGIAN SAHAM: 124246

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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NSVMUN5312DW1T3G
ON Semiconductor

NSVMUN5312DW1T3G

BAGIAN SAHAM: 121655

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVMUN5211DW1T2G
ON Semiconductor

NSVMUN5211DW1T2G

BAGIAN SAHAM: 121426

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 10 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V,

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IMH20TR1G
ON Semiconductor

IMH20TR1G

BAGIAN SAHAM: 119987

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 600mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 15V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V,

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NSBC144EDXV6T5G
ON Semiconductor

NSBC144EDXV6T5G

BAGIAN SAHAM: 180837

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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EMC2DXV5T1G
ON Semiconductor

EMC2DXV5T1G

BAGIAN SAHAM: 188232

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V,

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NSVBC124XPDXV6T1G
ON Semiconductor

NSVBC124XPDXV6T1G

BAGIAN SAHAM: 173078

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 22 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVB1706DMW5T1G
ON Semiconductor

NSVB1706DMW5T1G

BAGIAN SAHAM: 192009

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBC144WDP6T5G
ON Semiconductor

NSBC144WDP6T5G

BAGIAN SAHAM: 114076

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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MUN5116DW1T1G
ON Semiconductor

MUN5116DW1T1G

BAGIAN SAHAM: 183614

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 4.7 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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MUN5314DW1T1G
ON Semiconductor

MUN5314DW1T1G

BAGIAN SAHAM: 187882

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5214DW1T3G
ON Semiconductor

NSVMUN5214DW1T3G

BAGIAN SAHAM: 125398

Jenis Transistor:: 2 NPN - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 10 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSVMUN5331DW1T1G
ON Semiconductor

NSVMUN5331DW1T1G

BAGIAN SAHAM: 187285

Jenis Transistor:: 1 NPN, 1 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V,

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NSBA144WDP6T5G
ON Semiconductor

NSBA144WDP6T5G

BAGIAN SAHAM: 115037

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 47 kOhms, Resistor - Basis Emitor (R2): 22 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA123JDXV6T1
ON Semiconductor

NSBA123JDXV6T1

BAGIAN SAHAM: 1409

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Resistor - Basis Emitor (R2): 47 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V,

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NSBA123TDP6T5G
ON Semiconductor

NSBA123TDP6T5G

BAGIAN SAHAM: 110663

Jenis Transistor:: 2 PNP - Pre-Biased (Dual), Arus - Kolektor (Ic) (Maks): 100mA, Tegangan - Kerusakan Kolektor Emitter (Maks): 50V, Resistor - Basis (R1): 2.2 kOhms, Penguatan Arus DC (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V,

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