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Dioda - Kapasitansi Variabel (Varicaps, Varactors)

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  • Dioda - Kapasitansi Variabel (Varicaps, Varactors)
SVC203C-TB-E
ON Semiconductor

SVC203C-TB-E

BAGIAN SAHAM: 178025

Kapasitansi @ Vr, F: 13.4pF @ 9V, 1MHz, Rasio Kapasitansi: 4.6, Kondisi Rasio Kapasitansi: C1/C9, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 60 @ 3V, 100MHz,

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MMBV109LT3G
ON Semiconductor

MMBV109LT3G

BAGIAN SAHAM: 7476

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV409LT1
ON Semiconductor

MMBV409LT1

BAGIAN SAHAM: 4762

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 1.9, Kondisi Rasio Kapasitansi: C3/C8, Tegangan - Puncak Terbalik (Maks): 20V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV3102LT1
ON Semiconductor

MMBV3102LT1

BAGIAN SAHAM: 7497

Kapasitansi @ Vr, F: 25pF @ 3V, 1MHz, Rasio Kapasitansi: 4.8, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV809LT3G
ON Semiconductor

MMBV809LT3G

BAGIAN SAHAM: 7496

Kapasitansi @ Vr, F: 6.1pF @ 2V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 20V, Tipe Dioda: Single, Q @ Vr, F: 75 @ 3V, 500MHz,

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MV104G
ON Semiconductor

MV104G

BAGIAN SAHAM: 7467

Kapasitansi @ Vr, F: 42pF @ 3V, 1MHz, Rasio Kapasitansi: 2.8, Kondisi Rasio Kapasitansi: C3/C30, Tegangan - Puncak Terbalik (Maks): 32V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 140 @ 3V, 100MHz,

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MMBV105GLT1G
ON Semiconductor

MMBV105GLT1G

BAGIAN SAHAM: 7457

Kapasitansi @ Vr, F: 2.8pF @ 25V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 250 @ 3V, 50MHz,

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MMBV2108LT1G
ON Semiconductor

MMBV2108LT1G

BAGIAN SAHAM: 7478

Kapasitansi @ Vr, F: 29.7pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 300 @ 4V, 50MHz,

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MMBV409LT1G
ON Semiconductor

MMBV409LT1G

BAGIAN SAHAM: 7505

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 1.9, Kondisi Rasio Kapasitansi: C3/C8, Tegangan - Puncak Terbalik (Maks): 20V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV2105LT1
ON Semiconductor

MMBV2105LT1

BAGIAN SAHAM: 7497

Kapasitansi @ Vr, F: 16.5pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 400 @ 4V, 50MHz,

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MV209G
ON Semiconductor

MV209G

BAGIAN SAHAM: 7434

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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SVC236-TB-E
ON Semiconductor

SVC236-TB-E

BAGIAN SAHAM: 172795

Kapasitansi @ Vr, F: 16.84pF @ 6.5V, 1MHz, Rasio Kapasitansi: 5, Kondisi Rasio Kapasitansi: C1/C6.5, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 70 @ 3V, 100MHz,

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MMBV105GLT1
ON Semiconductor

MMBV105GLT1

BAGIAN SAHAM: 7466

Kapasitansi @ Vr, F: 2.8pF @ 25V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 250 @ 3V, 50MHz,

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MV2105
ON Semiconductor

MV2105

BAGIAN SAHAM: 4830

Kapasitansi @ Vr, F: 16.5pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 400 @ 4V, 50MHz,

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SVC230-TB-E
ON Semiconductor

SVC230-TB-E

BAGIAN SAHAM: 129142

Kapasitansi @ Vr, F: 28.2pF @ 8V, 1MHz, Rasio Kapasitansi: 1.75, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 100 @ 3V, 100MHz,

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MV2101
ON Semiconductor

MV2101

BAGIAN SAHAM: 7532

Kapasitansi @ Vr, F: 7.5pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 450 @ 4V, 50MHz,

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MMVL109T1G
ON Semiconductor

MMVL109T1G

BAGIAN SAHAM: 7529

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV2105LT1G
ON Semiconductor

MMBV2105LT1G

BAGIAN SAHAM: 7480

Kapasitansi @ Vr, F: 16.5pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 400 @ 4V, 50MHz,

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MMVL809T1G
ON Semiconductor

MMVL809T1G

BAGIAN SAHAM: 7476

Kapasitansi @ Vr, F: 6.1pF @ 2V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 20V, Tipe Dioda: Single, Q @ Vr, F: 75 @ 3V, 500MHz,

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MMBV2108LT1
ON Semiconductor

MMBV2108LT1

BAGIAN SAHAM: 7527

Kapasitansi @ Vr, F: 29.7pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 300 @ 4V, 50MHz,

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SVC270-TL-E
ON Semiconductor

SVC270-TL-E

BAGIAN SAHAM: 119447

Kapasitansi @ Vr, F: 28.2pF @ 8V, 1MHz, Rasio Kapasitansi: 1.75, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 100 @ 3V, 100MHz,

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SVC272-TL-E
ON Semiconductor

SVC272-TL-E

BAGIAN SAHAM: 157486

Kapasitansi @ Vr, F: 18.55pF @ 8V, 1MHz, Rasio Kapasitansi: 2.3, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 16V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 150 @ 2V, 100MHz,

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SVC383T-TL-E
ON Semiconductor

SVC383T-TL-E

BAGIAN SAHAM: 7528

Kapasitansi @ Vr, F: 27pF @ 6.5V, 1MHz, Rasio Kapasitansi: 24.5, Kondisi Rasio Kapasitansi: C1/C6.5, Tegangan - Puncak Terbalik (Maks): 33V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 200 @ 1V, 1MHz,

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MMBV109LT1G
ON Semiconductor

MMBV109LT1G

BAGIAN SAHAM: 7474

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MMBV2109LT1
ON Semiconductor

MMBV2109LT1

BAGIAN SAHAM: 7496

Kapasitansi @ Vr, F: 36.3pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MMBV609LT1
ON Semiconductor

MMBV609LT1

BAGIAN SAHAM: 7446

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 2.4, Kondisi Rasio Kapasitansi: C3/C8, Tegangan - Puncak Terbalik (Maks): 20V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 450 @ 3V, 50MHz,

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MMBV432LT1
ON Semiconductor

MMBV432LT1

BAGIAN SAHAM: 7461

Kapasitansi @ Vr, F: 48.1pF @ 2V, 1MHz, Rasio Kapasitansi: 2, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 14V, Tipe Dioda: 1 Pair Common Cathode, Q @ Vr, F: 150 @ 2V, 100MHz,

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MMBV2109LT1G
ON Semiconductor

MMBV2109LT1G

BAGIAN SAHAM: 7468

Kapasitansi @ Vr, F: 36.3pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MV2109G
ON Semiconductor

MV2109G

BAGIAN SAHAM: 7495

Kapasitansi @ Vr, F: 36.3pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MMVL2101T1G
ON Semiconductor

MMVL2101T1G

BAGIAN SAHAM: 7502

Kapasitansi @ Vr, F: 7.5pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 450 @ 4V, 50MHz,

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MMBV2101LT1G
ON Semiconductor

MMBV2101LT1G

BAGIAN SAHAM: 7426

Kapasitansi @ Vr, F: 7.5pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 450 @ 4V, 50MHz,

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MMBV2107LT1
ON Semiconductor

MMBV2107LT1

BAGIAN SAHAM: 4758

Kapasitansi @ Vr, F: 24.2pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 350 @ 4V, 50MHz,

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MMBV109LT3
ON Semiconductor

MMBV109LT3

BAGIAN SAHAM: 7449

Kapasitansi @ Vr, F: 32pF @ 3V, 1MHz, Rasio Kapasitansi: 6.5, Kondisi Rasio Kapasitansi: C3/C25, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 3V, 50MHz,

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MV2109RLRAG
ON Semiconductor

MV2109RLRAG

BAGIAN SAHAM: 7459

Kapasitansi @ Vr, F: 36.3pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 200 @ 4V, 50MHz,

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MMBV809LT1
ON Semiconductor

MMBV809LT1

BAGIAN SAHAM: 7482

Kapasitansi @ Vr, F: 6.1pF @ 2V, 1MHz, Rasio Kapasitansi: 2.6, Kondisi Rasio Kapasitansi: C2/C8, Tegangan - Puncak Terbalik (Maks): 20V, Tipe Dioda: Single, Q @ Vr, F: 75 @ 3V, 500MHz,

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MMBV2107LT1G
ON Semiconductor

MMBV2107LT1G

BAGIAN SAHAM: 7528

Kapasitansi @ Vr, F: 24.2pF @ 4V, 1MHz, Rasio Kapasitansi: 3.2, Kondisi Rasio Kapasitansi: C2/C30, Tegangan - Puncak Terbalik (Maks): 30V, Tipe Dioda: Single, Q @ Vr, F: 350 @ 4V, 50MHz,

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