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Transistor - FET, MOSFET - Array

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  • Transistor - FET, MOSFET - Array
APTM100DU18TG
Microsemi Corporation

APTM100DU18TG

BAGIAN SAHAM: 2809

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 43A, Rds Aktif (Maks) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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APTM100DDA35T3G
Microsemi Corporation

APTM100DDA35T3G

BAGIAN SAHAM: 2731

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, Rds Aktif (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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APTM100A46FT1G
Microsemi Corporation

APTM100A46FT1G

BAGIAN SAHAM: 2813

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 19A, Rds Aktif (Maks) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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APTM100A40FT1G
Microsemi Corporation

APTM100A40FT1G

BAGIAN SAHAM: 2805

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 21A, Rds Aktif (Maks) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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APTM100A12STG
Microsemi Corporation

APTM100A12STG

BAGIAN SAHAM: 2822

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 68A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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APTM100A23SCTG
Microsemi Corporation

APTM100A23SCTG

BAGIAN SAHAM: 2760

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 36A, Rds Aktif (Maks) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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APTM08TDUM04PG
Microsemi Corporation

APTM08TDUM04PG

BAGIAN SAHAM: 2746

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 75V, Arus - Pembuangan Kontinu (Id) @ 25°C: 120A, Rds Aktif (Maks) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs(th) (Maks) @ Id: 4V @ 1mA,

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APTC80H29T1G
Microsemi Corporation

APTC80H29T1G

BAGIAN SAHAM: 2742

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A, Rds Aktif (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 1mA,

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APTC80DSK29T3G
Microsemi Corporation

APTC80DSK29T3G

BAGIAN SAHAM: 2793

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A, Rds Aktif (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 1mA,

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APTC80H29SCTG
Microsemi Corporation

APTC80H29SCTG

BAGIAN SAHAM: 1092

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A, Rds Aktif (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 1mA,

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APTC80DDA29T3G
Microsemi Corporation

APTC80DDA29T3G

BAGIAN SAHAM: 2788

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A, Rds Aktif (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 1mA,

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APTC80A15T1G
Microsemi Corporation

APTC80A15T1G

BAGIAN SAHAM: 2799

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 28A, Rds Aktif (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2mA,

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APTC80AM75SCG
Microsemi Corporation

APTC80AM75SCG

BAGIAN SAHAM: 594

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 56A, Rds Aktif (Maks) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 4mA,

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APTC80A10SCTG
Microsemi Corporation

APTC80A10SCTG

BAGIAN SAHAM: 863

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 42A, Rds Aktif (Maks) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

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APTC60DSKM70T3G
Microsemi Corporation

APTC60DSKM70T3G

BAGIAN SAHAM: 2751

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

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APTC60DSKM35T3G
Microsemi Corporation

APTC60DSKM35T3G

BAGIAN SAHAM: 2727

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 72A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5.4mA,

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APTC60DDAM70T3G
Microsemi Corporation

APTC60DDAM70T3G

BAGIAN SAHAM: 2741

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

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APTC60AM70T1G
Microsemi Corporation

APTC60AM70T1G

BAGIAN SAHAM: 2769

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

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JANTXV2N7334
Microsemi Corporation

JANTXV2N7334

BAGIAN SAHAM: 2993

Tipe FET: 4 N-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, Rds Aktif (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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JANTX2N7335
Microsemi Corporation

JANTX2N7335

BAGIAN SAHAM: 2875

Tipe FET: 4 P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 750mA, Rds Aktif (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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JAN2N7335
Microsemi Corporation

JAN2N7335

BAGIAN SAHAM: 2942

Tipe FET: 4 P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 750mA, Rds Aktif (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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JAN2N7334
Microsemi Corporation

JAN2N7334

BAGIAN SAHAM: 2865

Tipe FET: 4 N-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, Rds Aktif (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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JANTXV2N7335
Microsemi Corporation

JANTXV2N7335

BAGIAN SAHAM: 2903

Tipe FET: 4 P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 750mA, Rds Aktif (Maks) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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JANTX2N7334
Microsemi Corporation

JANTX2N7334

BAGIAN SAHAM: 2911

Tipe FET: 4 N-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, Rds Aktif (Maks) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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