Transistor - FET, MOSFET - Array | Produk Semikonduktor Diskrit | 7

APTM50DUM25TG

BAGIAN SAHAM: 2781

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 149A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50DUM35TG

BAGIAN SAHAM: 2820

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 99A, Rds Aktif (Maks) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DUM19G

BAGIAN SAHAM: 2832

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 163A, Rds Aktif (Maks) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DUM17G

BAGIAN SAHAM: 2758

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 180A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DSKM65T3G

BAGIAN SAHAM: 3279

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DHM75TG

BAGIAN SAHAM: 2739

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 46A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DSK10T3G

BAGIAN SAHAM: 2805

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 37A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50DHM65TG

BAGIAN SAHAM: 3354

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM25FTG

BAGIAN SAHAM: 2755

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 149A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50AM70FT1G

BAGIAN SAHAM: 2771

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 50A, Rds Aktif (Maks) @ Id, Vgs: 84 mOhm @ 42A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50A15FT1G

BAGIAN SAHAM: 2761

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 25A, Rds Aktif (Maks) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50AM19STG

BAGIAN SAHAM: 2747

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 170A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 85A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM20DUM10TG

BAGIAN SAHAM: 2803

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 175A, Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20TDUM16PG

BAGIAN SAHAM: 2825

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DUM05TG

BAGIAN SAHAM: 2827

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 333A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM20DHM10G

BAGIAN SAHAM: 2785

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 175A, Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20DHM16TG

BAGIAN SAHAM: 2733

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DHM08G

BAGIAN SAHAM: 2824

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 208A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FTG

BAGIAN SAHAM: 2762

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 333A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM120TDU57PG

BAGIAN SAHAM: 2732

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120H57FT3G

BAGIAN SAHAM: 2766

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DU29TG

BAGIAN SAHAM: 2792

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 34A, Rds Aktif (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120DSK57T3G

BAGIAN SAHAM: 2791

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A80FT1G

BAGIAN SAHAM: 2744

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 14A, Rds Aktif (Maks) @ Id, Vgs: 960 mOhm @ 12A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DDA57T3G

BAGIAN SAHAM: 2827

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A65FT1G

BAGIAN SAHAM: 2750

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 16A, Rds Aktif (Maks) @ Id, Vgs: 780 mOhm @ 14A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10TDUM19PG

BAGIAN SAHAM: 2820

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 70A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM10TDUM09PG

BAGIAN SAHAM: 2746

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM09FTG

BAGIAN SAHAM: 2809

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DUM05TG

BAGIAN SAHAM: 2783

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 278A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs(th) (Maks) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM10DHM09TG

BAGIAN SAHAM: 2789

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM19T3G

BAGIAN SAHAM: 2824

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 70A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM100TDU35PG

BAGIAN SAHAM: 2796

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, Rds Aktif (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM09T3G

BAGIAN SAHAM: 2768

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM100DUM90G

BAGIAN SAHAM: 2758

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 78A, Rds Aktif (Maks) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H80FT1G

BAGIAN SAHAM: 2809

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 11A, Rds Aktif (Maks) @ Id, Vgs: 960 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,

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