Transistor - FET, MOSFET - Array

APTC60TDUM35PG

BAGIAN SAHAM: 688

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 72A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5.4mA,

APTM10AM05FTG

BAGIAN SAHAM: 820

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 278A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs(th) (Maks) @ Id: 4V @ 5mA,

APTC60HM70RT3G

BAGIAN SAHAM: 1479

Tipe FET: 4 N-Channel (H-Bridge) + Bridge Rectifier, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

APTC60HM45T1G

BAGIAN SAHAM: 1300

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

APTC80TA15PG

BAGIAN SAHAM: 1022

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 28A, Rds Aktif (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2mA,

APTC80H29T3G

BAGIAN SAHAM: 2362

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 15A, Rds Aktif (Maks) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 1mA,

APTM50HM75SCTG

BAGIAN SAHAM: 667

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 46A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTMC120AM20CT1AG

BAGIAN SAHAM: 173

Tipe FET: 2 N Channel (Phase Leg), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 143A (Tc), Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs(th) (Maks) @ Id: 2.3V @ 2mA (Typ),

APTM120A20DG

BAGIAN SAHAM: 538

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 50A, Rds Aktif (Maks) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs(th) (Maks) @ Id: 5V @ 6mA,

APTC60AM45T1G

BAGIAN SAHAM: 293

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

APTMC120TAM34CT3AG

BAGIAN SAHAM: 251

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 74A (Tc), Rds Aktif (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs(th) (Maks) @ Id: 4V @ 15mA,

APTM50DDAM65T3G

BAGIAN SAHAM: 1269

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTC60DDAM24T3G

BAGIAN SAHAM: 1114

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 95A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5mA,

APTM10DSKM19T3G

BAGIAN SAHAM: 1965

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 70A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Maks) @ Id: 4V @ 1mA,

APTM20AM06SG

BAGIAN SAHAM: 553

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 300A, Rds Aktif (Maks) @ Id, Vgs: 7.2 mOhm @ 150A, 10V, Vgs(th) (Maks) @ Id: 5V @ 6mA,

APTC60DDAM45T1G

BAGIAN SAHAM: 1722

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

APTM100H18FG

BAGIAN SAHAM: 404

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 43A, Rds Aktif (Maks) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

APTM100H35FT3G

BAGIAN SAHAM: 784

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, Rds Aktif (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM20TAM16FPG

BAGIAN SAHAM: 537

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM20AM08FTG

BAGIAN SAHAM: 774

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 208A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

APTC80A15SCTG

BAGIAN SAHAM: 987

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 800V, Arus - Pembuangan Kontinu (Id) @ 25°C: 28A, Rds Aktif (Maks) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2mA,

APTM10DHM05G

BAGIAN SAHAM: 750

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 278A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs(th) (Maks) @ Id: 4V @ 5mA,

APTM50HM75STG

BAGIAN SAHAM: 723

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 46A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM20AM04FG

BAGIAN SAHAM: 346

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 372A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

APTC60AM18SCG

BAGIAN SAHAM: 415

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 143A, Rds Aktif (Maks) @ Id, Vgs: 18 mOhm @ 71.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 4mA,

APTM100A13SG

BAGIAN SAHAM: 445

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 65A, Rds Aktif (Maks) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 6mA,

APTM50AM24SG

BAGIAN SAHAM: 446

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 150A, Rds Aktif (Maks) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs(th) (Maks) @ Id: 5V @ 6mA,

APTMC120AM55CT1AG

BAGIAN SAHAM: 412

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 55A (Tc), Rds Aktif (Maks) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs(th) (Maks) @ Id: 2.2V @ 2mA (Typ),

APTM120H57FTG

BAGIAN SAHAM: 3119

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 17A, Rds Aktif (Maks) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM50DHM35G

BAGIAN SAHAM: 3087

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 99A, Rds Aktif (Maks) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

APTMC120HRM40CT3AG

BAGIAN SAHAM: 3001

Tipe FET: 2 N-Channel (Dual), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 73A (Tc), Rds Aktif (Maks) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs(th) (Maks) @ Id: 3V @ 12.5mA,

APTC60DSKM45CT1G

BAGIAN SAHAM: 2944

Tipe FET: 2 N-Channel (Dual), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

APTM20DHM16T3G

BAGIAN SAHAM: 2948

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM100VDA35T3G

BAGIAN SAHAM: 3387

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, Rds Aktif (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTJC120AM25VCT1AG

BAGIAN SAHAM: 3378

APTMC120HR11CT3AG

BAGIAN SAHAM: 2997

Tipe FET: 2 N-Channel (Dual), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 26A (Tc), Rds Aktif (Maks) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs(th) (Maks) @ Id: 3V @ 5mA,