BAGIAN SAHAM: 144
Tipe FET: 2 N-Channel (Dual), Schottky, Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 370A (Tc), Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs(th) (Maks) @ Id: 3V @ 10mA,