Transistor - FET, MOSFET - Array | Produk Semikonduktor Diskrit | 7

APTM10TAM19FPG

BAGIAN SAHAM: 905

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 70A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs(th) (Maks) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC60TAM35PG

BAGIAN SAHAM: 622

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 72A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM20AM10STG

BAGIAN SAHAM: 814

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 175A, Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60HM70SCTG

BAGIAN SAHAM: 825

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM20HM20STG

BAGIAN SAHAM: 874

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 89A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM35T1G

BAGIAN SAHAM: 1737

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 72A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM120A20SG

BAGIAN SAHAM: 517

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 50A, Rds Aktif (Maks) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs(th) (Maks) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTMC60TLM14CAG

BAGIAN SAHAM: 121

Tipe FET: 4 N-Channel (Three Level Inverter), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 219A (Tc), Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs(th) (Maks) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTM20DUM04G

BAGIAN SAHAM: 485

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 372A, Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTMC120AM12CT3AG

BAGIAN SAHAM: 202

Tipe FET: 2 N Channel (Phase Leg), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 220A (Tc), Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs(th) (Maks) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTC60TAM21SCTPAG

BAGIAN SAHAM: 341

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 116A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 88A, 10V, Vgs(th) (Maks) @ Id: 3.6V @ 6mA,

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Microsemi Corporation

APTM100A23STG

BAGIAN SAHAM: 772

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 36A, Rds Aktif (Maks) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60AM24T1G

BAGIAN SAHAM: 1322

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 95A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTMC120TAM17CTPAG

BAGIAN SAHAM: 81

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 147A (Tc), Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs(th) (Maks) @ Id: 2.4V @ 20mA (Typ),

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Microsemi Corporation

APTM60H23FT1G

BAGIAN SAHAM: 2039

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A, Rds Aktif (Maks) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50AM38FTG

BAGIAN SAHAM: 808

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 90A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120A29FTG

BAGIAN SAHAM: 635

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 34A, Rds Aktif (Maks) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DHM38G

BAGIAN SAHAM: 726

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 90A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20DUM08TG

BAGIAN SAHAM: 866

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 208A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM10AM02FG

BAGIAN SAHAM: 400

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 495A, Rds Aktif (Maks) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs(th) (Maks) @ Id: 4V @ 10mA,

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Microsemi Corporation

APTM10DSKM09T3G

BAGIAN SAHAM: 1457

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTC60BBM24T3G

BAGIAN SAHAM: 1133

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 95A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTML602U12R020T3AG

BAGIAN SAHAM: 485

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 45A, Rds Aktif (Maks) @ Id, Vgs: 150 mOhm @ 22.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTC60HM70BT3G

BAGIAN SAHAM: 1289

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM20HM16FTG

BAGIAN SAHAM: 748

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 104A, Rds Aktif (Maks) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20AM10FTG

BAGIAN SAHAM: 856

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 200V, Arus - Pembuangan Kontinu (Id) @ 25°C: 175A, Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTMC120AM09CT3AG

BAGIAN SAHAM: 162

Tipe FET: 2 N Channel (Phase Leg), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 295A (Tc), Rds Aktif (Maks) @ Id, Vgs: 9 mOhm @ 200A, 20V, Vgs(th) (Maks) @ Id: 2.4V @ 40mA (Typ),

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Microsemi Corporation

APTC60DDAM70T1G

BAGIAN SAHAM: 2258

Tipe FET: 2 N Channel (Dual Buck Chopper), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 39A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM45BC1G

BAGIAN SAHAM: 1478

Tipe FET: 3 N Channel (Phase Leg + Boost Chopper), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM10TAM09FPG

BAGIAN SAHAM: 558

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 139A, Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM100DSK35T3G

BAGIAN SAHAM: 1267

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 22A, Rds Aktif (Maks) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM45B1G

BAGIAN SAHAM: 1093

Tipe FET: 3 N Channel (Phase Leg + Boost Chopper), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 49A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM100H46FT3G

BAGIAN SAHAM: 1492

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 19A, Rds Aktif (Maks) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50HM75FTG

BAGIAN SAHAM: 809

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 46A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM24T3G

BAGIAN SAHAM: 757

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Super Junction, Tiriskan ke Tegangan Sumber (Vdss): 600V, Arus - Pembuangan Kontinu (Id) @ 25°C: 95A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs(th) (Maks) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100AM90FG

BAGIAN SAHAM: 379

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 1000V (1kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 78A, Rds Aktif (Maks) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs(th) (Maks) @ Id: 5V @ 10mA,

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