| Tipe | Deskripsi |
| Status Bagian | Active |
|---|---|
| Tipe FET | 4 N-Channel (Three Level Inverter) |
| Fitur FET | Silicon Carbide (SiC) |
| Tiriskan ke Tegangan Sumber (Vdss) | 1200V (1.2kV) |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 219A (Tc) |
| Rds Aktif (Maks) @ Id, Vgs | 12 mOhm @ 150A, 20V |
| Vgs(th) (Maks) @ Id | 2.4V @ 30mA (Typ) |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 483nC @ 20V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 8400pF @ 1000V |
| Daya - Maks | 925W |
| Suhu Operasional | -40°C ~ 150°C (TJ) |
| Jenis pemasangan: | Chassis Mount |
| Paket / Kasus | SP6 |
| Paket Perangkat Pemasok | SP6 |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
