| Tipe | Deskripsi |
| Status Bagian | Active |
|---|---|
| Tipe FET | 6 N-Channel (3-Phase Bridge) |
| Fitur FET | Silicon Carbide (SiC) |
| Tiriskan ke Tegangan Sumber (Vdss) | 1200V (1.2kV) |
| Arus - Pembuangan Kontinu (Id) @ 25°C | 78A (Tc) |
| Rds Aktif (Maks) @ Id, Vgs | 33 mOhm @ 60A, 20V |
| Vgs(th) (Maks) @ Id | 2.2V @ 3mA (Typ) |
| Biaya Gerbang (Qg) (Maks) @ Vgs | 148nC @ 20V |
| Kapasitansi Input (Ciss) (Maks) @ Vds | 2850pF @ 1000V |
| Daya - Maks | 370W |
| Suhu Operasional | -40°C ~ 150°C (TJ) |
| Jenis pemasangan: | Chassis Mount |
| Paket / Kasus | SP6 |
| Paket Perangkat Pemasok | SP6-P |
| ROHS Status | Compliant RoHS. |
|---|---|
| Tingkat sensitivitas kelembaban (MSL) | Tak dapat diterapkan |
| Status siklus hidup | Usang / Akhir Kehidupan |
| Stok kategori. | Stok tersedia |
