Dioda - Penyearah - Array | Produk Semikonduktor Diskrit | 25

MURTA400120

BAGIAN SAHAM: 996

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 2.6V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X030A04

BAGIAN SAHAM: 4394

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 30A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 30A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA50060R

BAGIAN SAHAM: 982

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A200

BAGIAN SAHAM: 3393

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT300100R

BAGIAN SAHAM: 1524

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X120A150

BAGIAN SAHAM: 3101

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA200120

BAGIAN SAHAM: 994

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 2.6V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30020

BAGIAN SAHAM: 1593

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR500200CTR

BAGIAN SAHAM: 1176

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 250A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30035CT

BAGIAN SAHAM: 1406

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50040CT

BAGIAN SAHAM: 1198

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40020CT

BAGIAN SAHAM: 1580

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST12020

BAGIAN SAHAM: 1534

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA30060R

BAGIAN SAHAM: 1021

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30040R

BAGIAN SAHAM: 1168

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT10005

BAGIAN SAHAM: 1314

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30005

BAGIAN SAHAM: 1154

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA20040R

BAGIAN SAHAM: 971

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR20020CTR

BAGIAN SAHAM: 1511

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR500200CT

BAGIAN SAHAM: 1191

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 250A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR10005CTR

BAGIAN SAHAM: 1524

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST160100

BAGIAN SAHAM: 1519

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA40040

BAGIAN SAHAM: 989

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40080CT

BAGIAN SAHAM: 1222

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT200120(A)D

BAGIAN SAHAM: 1339

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40020CTR

BAGIAN SAHAM: 1584

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60030R

BAGIAN SAHAM: 934

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT10020

BAGIAN SAHAM: 1292

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR120100CT

BAGIAN SAHAM: 1548

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12040R

BAGIAN SAHAM: 1889

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT120100R

BAGIAN SAHAM: 1802

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR600150CT

BAGIAN SAHAM: 917

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT120100

BAGIAN SAHAM: 1842

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40020

BAGIAN SAHAM: 1322

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X060A080

BAGIAN SAHAM: 4085

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR40010CT

BAGIAN SAHAM: 1209

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 125A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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