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Dioda - Penyearah - Array

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  • Dioda - Penyearah - Array
MBR40035CTR
GeneSiC Semiconductor

MBR40035CTR

BAGIAN SAHAM: 1389

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR400150CT
GeneSiC Semiconductor

MBR400150CT

BAGIAN SAHAM: 1554

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT60030
GeneSiC Semiconductor

MBRT60030

BAGIAN SAHAM: 891

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR10020CTR
GeneSiC Semiconductor

MUR10020CTR

BAGIAN SAHAM: 1535

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12045CT
GeneSiC Semiconductor

MBR12045CT

BAGIAN SAHAM: 1536

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT60080
GeneSiC Semiconductor

MBRT60080

BAGIAN SAHAM: 897

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X120A120
GeneSiC Semiconductor

MBR2X120A120

BAGIAN SAHAM: 3151

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR20035CTR
GeneSiC Semiconductor

MBR20035CTR

BAGIAN SAHAM: 1554

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT40040
GeneSiC Semiconductor

MURT40040

BAGIAN SAHAM: 880

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR60030CT
GeneSiC Semiconductor

MBR60030CT

BAGIAN SAHAM: 983

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X050A180
GeneSiC Semiconductor

MBR2X050A180

BAGIAN SAHAM: 3596

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA30040R
GeneSiC Semiconductor

MURTA30040R

BAGIAN SAHAM: 935

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MBR600200CTR
GeneSiC Semiconductor

MBR600200CTR

BAGIAN SAHAM: 956

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA60040R
GeneSiC Semiconductor

MURTA60040R

BAGIAN SAHAM: 1014

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X120A060
GeneSiC Semiconductor

MBR2X120A060

BAGIAN SAHAM: 3220

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT20005
GeneSiC Semiconductor

MURT20005

BAGIAN SAHAM: 1230

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR20010CTR
GeneSiC Semiconductor

MUR20010CTR

BAGIAN SAHAM: 1241

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT150100(A)D
GeneSiC Semiconductor

MSRT150100(A)D

BAGIAN SAHAM: 1863

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MURTA40040R
GeneSiC Semiconductor

MURTA40040R

BAGIAN SAHAM: 964

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MSRT100140(A)D
GeneSiC Semiconductor

MSRT100140(A)D

BAGIAN SAHAM: 1918

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MBRT60035R
GeneSiC Semiconductor

MBRT60035R

BAGIAN SAHAM: 968

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X160A150
GeneSiC Semiconductor

MBR2X160A150

BAGIAN SAHAM: 2527

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT20035R
GeneSiC Semiconductor

MBRT20035R

BAGIAN SAHAM: 1367

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR40010CTR
GeneSiC Semiconductor

MUR40010CTR

BAGIAN SAHAM: 1252

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 125A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR30010CTR
GeneSiC Semiconductor

MUR30010CTR

BAGIAN SAHAM: 1392

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR200150CTR
GeneSiC Semiconductor

MBR200150CTR

BAGIAN SAHAM: 1502

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR20005CT
GeneSiC Semiconductor

MUR20005CT

BAGIAN SAHAM: 1207

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR300200CT
GeneSiC Semiconductor

MBR300200CT

BAGIAN SAHAM: 1452

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR2X100A04
GeneSiC Semiconductor

MUR2X100A04

BAGIAN SAHAM: 2843

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR30040CTR
GeneSiC Semiconductor

MUR30040CTR

BAGIAN SAHAM: 1329

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12060CT
GeneSiC Semiconductor

MBR12060CT

BAGIAN SAHAM: 1522

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X100A060
GeneSiC Semiconductor

MBR2X100A060

BAGIAN SAHAM: 3312

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FST100200
GeneSiC Semiconductor

FST100200

BAGIAN SAHAM: 1661

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT500100R
GeneSiC Semiconductor

MBRT500100R

BAGIAN SAHAM: 1083

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA40020R
GeneSiC Semiconductor

MURTA40020R

BAGIAN SAHAM: 985

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MBRT200150
GeneSiC Semiconductor

MBRT200150

BAGIAN SAHAM: 1643

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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