Dioda - Penyearah - Array

Rumah
Dioda - Penyearah - Array

GeneSiC Semiconductor

MBRT20040

BAGIAN SAHAM: 1226

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X060A06

BAGIAN SAHAM: 3244

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40040CTR

BAGIAN SAHAM: 1155

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40045CTS

BAGIAN SAHAM: 1365

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

GB20SLT12-247D

BAGIAN SAHAM: 5080

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 25A, Tegangan - Maju (Vf) (Maks) @ If: 1.8V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X050A200

BAGIAN SAHAM: 2947

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST16035

BAGIAN SAHAM: 1345

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X120A045

BAGIAN SAHAM: 2710

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 240A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30040R

BAGIAN SAHAM: 1073

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X030A045

BAGIAN SAHAM: 3701

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X060A04

BAGIAN SAHAM: 3385

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A045

BAGIAN SAHAM: 3289

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X030A100

BAGIAN SAHAM: 3572

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X060A02

BAGIAN SAHAM: 3221

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30035CTR

BAGIAN SAHAM: 1234

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT600200R

BAGIAN SAHAM: 820

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT400100

BAGIAN SAHAM: 1123

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A100

BAGIAN SAHAM: 3337

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X030A06

BAGIAN SAHAM: 3768

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 30A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR400100CT

BAGIAN SAHAM: 1403

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA600140(A)

BAGIAN SAHAM: 673

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 600A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA6001R

BAGIAN SAHAM: 750

Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA60060(A)

BAGIAN SAHAM: 682

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 600A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA600100(A)

BAGIAN SAHAM: 691

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 600A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA60080(A)

BAGIAN SAHAM: 753

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 600A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40045DL

BAGIAN SAHAM: 877

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA600120(A)

BAGIAN SAHAM: 675

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 600A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA6001

BAGIAN SAHAM: 665

Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

GB10SLT12-247D

BAGIAN SAHAM: 8816

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Silicon Carbide Schottky, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.9V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF120200

BAGIAN SAHAM: 4536

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURF30020

BAGIAN SAHAM: 4527

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 150A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30030CTRL

BAGIAN SAHAM: 4504

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30020CTL

BAGIAN SAHAM: 4475

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 580mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF12030

BAGIAN SAHAM: 4508

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRF30020

BAGIAN SAHAM: 4526

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 700mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40040RL

BAGIAN SAHAM: 4486

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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