Dioda - Penyearah - Array | Produk Semikonduktor Diskrit | 25

MURT40010R

BAGIAN SAHAM: 1085

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT20030R

BAGIAN SAHAM: 1602

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT10010

BAGIAN SAHAM: 1338

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12080CT

BAGIAN SAHAM: 1575

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR40005CTR

BAGIAN SAHAM: 1276

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 125A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA60020R

BAGIAN SAHAM: 949

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30030

BAGIAN SAHAM: 1567

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR20045CT

BAGIAN SAHAM: 1548

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A180

BAGIAN SAHAM: 3569

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT10040R

BAGIAN SAHAM: 1285

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR40040CT

BAGIAN SAHAM: 1230

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 125A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X120A02

BAGIAN SAHAM: 3144

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 120A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA50040R

BAGIAN SAHAM: 1066

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT40010

BAGIAN SAHAM: 1018

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR30005CTR

BAGIAN SAHAM: 1351

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR200200CT

BAGIAN SAHAM: 1544

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X050A100

BAGIAN SAHAM: 4056

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT10010R

BAGIAN SAHAM: 1316

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60080R

BAGIAN SAHAM: 968

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50030CT

BAGIAN SAHAM: 1187

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA60020

BAGIAN SAHAM: 979

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT20020R

BAGIAN SAHAM: 1604

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA200100(A)D

BAGIAN SAHAM: 1307

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60035

BAGIAN SAHAM: 981

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30060

BAGIAN SAHAM: 1255

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50045CTR

BAGIAN SAHAM: 1179

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR30005CT

BAGIAN SAHAM: 1326

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60040R

BAGIAN SAHAM: 959

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRTA200160(A)D

BAGIAN SAHAM: 1239

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT50040R

BAGIAN SAHAM: 1084

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST12080

BAGIAN SAHAM: 1525

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT50060R

BAGIAN SAHAM: 1065

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT50035R

BAGIAN SAHAM: 1133

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR200200CTR

BAGIAN SAHAM: 1485

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30040

BAGIAN SAHAM: 1082

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT50035

BAGIAN SAHAM: 1091

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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