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Dioda - Penyearah - Array

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  • Dioda - Penyearah - Array
MBRT40045R
GeneSiC Semiconductor

MBRT40045R

BAGIAN SAHAM: 1156

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X100A200
GeneSiC Semiconductor

MBR2X100A200

BAGIAN SAHAM: 3030

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR200150CT
GeneSiC Semiconductor

MBR200150CT

BAGIAN SAHAM: 1552

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT20020
GeneSiC Semiconductor

MURT20020

BAGIAN SAHAM: 1213

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR600100CT
GeneSiC Semiconductor

MBR600100CT

BAGIAN SAHAM: 972

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRT200140(A)D
GeneSiC Semiconductor

MSRT200140(A)D

BAGIAN SAHAM: 1324

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MBR500100CTR
GeneSiC Semiconductor

MBR500100CTR

BAGIAN SAHAM: 1192

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR2X100A120
GeneSiC Semiconductor

MBR2X100A120

BAGIAN SAHAM: 3096

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT12035
GeneSiC Semiconductor

MBRT12035

BAGIAN SAHAM: 1844

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR30060CT
GeneSiC Semiconductor

MUR30060CT

BAGIAN SAHAM: 1342

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12030CT
GeneSiC Semiconductor

MBR12030CT

BAGIAN SAHAM: 1491

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FST160150
GeneSiC Semiconductor

FST160150

BAGIAN SAHAM: 1636

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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FST10020
GeneSiC Semiconductor

FST10020

BAGIAN SAHAM: 1563

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR300150CTR
GeneSiC Semiconductor

MBR300150CTR

BAGIAN SAHAM: 1446

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 150A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR40060CTR
GeneSiC Semiconductor

MUR40060CTR

BAGIAN SAHAM: 1286

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 125A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR2X100A12
GeneSiC Semiconductor

MUR2X100A12

BAGIAN SAHAM: 3213

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MBR2X160A120
GeneSiC Semiconductor

MBR2X160A120

BAGIAN SAHAM: 2552

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT20040
GeneSiC Semiconductor

MURT20040

BAGIAN SAHAM: 1224

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT20005R
GeneSiC Semiconductor

MURT20005R

BAGIAN SAHAM: 1264

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR60080CT
GeneSiC Semiconductor

MBR60080CT

BAGIAN SAHAM: 795

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR30045CTR
GeneSiC Semiconductor

MBR30045CTR

BAGIAN SAHAM: 1429

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR50020CTR
GeneSiC Semiconductor

MBR50020CTR

BAGIAN SAHAM: 1148

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT50040
GeneSiC Semiconductor

MBRT50040

BAGIAN SAHAM: 1070

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MSRTA300100(A)D
GeneSiC Semiconductor

MSRTA300100(A)D

BAGIAN SAHAM: 1265

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 300A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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MBRT400150R
GeneSiC Semiconductor

MBRT400150R

BAGIAN SAHAM: 1842

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR12030CTR
GeneSiC Semiconductor

MBR12030CTR

BAGIAN SAHAM: 1542

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT30030R
GeneSiC Semiconductor

MBRT30030R

BAGIAN SAHAM: 1557

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT50060
GeneSiC Semiconductor

MBRT50060

BAGIAN SAHAM: 1058

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBR600100CTR
GeneSiC Semiconductor

MBR600100CTR

BAGIAN SAHAM: 945

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MUR2X120A10
GeneSiC Semiconductor

MUR2X120A10

BAGIAN SAHAM: 2503

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 120A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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FST12045
GeneSiC Semiconductor

FST12045

BAGIAN SAHAM: 1584

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURTA50040
GeneSiC Semiconductor

MURTA50040

BAGIAN SAHAM: 1062

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MURT10005R
GeneSiC Semiconductor

MURT10005R

BAGIAN SAHAM: 1254

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT60020
GeneSiC Semiconductor

MBRT60020

BAGIAN SAHAM: 938

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT50030
GeneSiC Semiconductor

MBRT50030

BAGIAN SAHAM: 1087

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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MBRT40020R
GeneSiC Semiconductor

MBRT40020R

BAGIAN SAHAM: 1393

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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