Dioda - Penyearah - Array | Produk Semikonduktor Diskrit | 25

MBR20040CTR

BAGIAN SAHAM: 1522

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT600100

BAGIAN SAHAM: 943

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT500150

BAGIAN SAHAM: 1136

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 250A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR60045CTR

BAGIAN SAHAM: 809

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X060A150

BAGIAN SAHAM: 3665

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50035CTR

BAGIAN SAHAM: 1190

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA20060

BAGIAN SAHAM: 945

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X120A180

BAGIAN SAHAM: 3068

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 180V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A120

BAGIAN SAHAM: 3870

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR20060CTR

BAGIAN SAHAM: 1240

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X100A080

BAGIAN SAHAM: 3284

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X080A080

BAGIAN SAHAM: 4139

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 80A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 80A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR2X050A060

BAGIAN SAHAM: 3894

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 50A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 50A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT120150

BAGIAN SAHAM: 1838

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT20060R

BAGIAN SAHAM: 1368

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT30060R

BAGIAN SAHAM: 1244

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12080CTR

BAGIAN SAHAM: 1544

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST16060

BAGIAN SAHAM: 1480

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 160A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 160A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA60060

BAGIAN SAHAM: 1000

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30020

BAGIAN SAHAM: 1086

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MSRT10080(A)D

BAGIAN SAHAM: 1907

Konfigurasi Dioda: 1 Pair Series Connection, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 100A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR120200CT

BAGIAN SAHAM: 1554

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 920mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT60040

BAGIAN SAHAM: 956

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 600A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 300A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR12040CTR

BAGIAN SAHAM: 1504

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 120A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT12060R

BAGIAN SAHAM: 1881

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 120A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 60A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40060R

BAGIAN SAHAM: 1366

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR40045CT

BAGIAN SAHAM: 1238

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR50080CT

BAGIAN SAHAM: 1182

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 500A (DC), Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 250A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURT30060R

BAGIAN SAHAM: 1172

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

FST10045

BAGIAN SAHAM: 1532

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 100A, Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBRT40035

BAGIAN SAHAM: 1119

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 35V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 400A (DC), Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 200A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR20020CTR

BAGIAN SAHAM: 1203

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MUR2X060A12

BAGIAN SAHAM: 2901

Konfigurasi Dioda: 2 Independent, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 60A, Tegangan - Maju (Vf) (Maks) @ If: 2.35V @ 60A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MURTA400120R

BAGIAN SAHAM: 958

Konfigurasi Dioda: 1 Pair Common Anode, Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A, Tegangan - Maju (Vf) (Maks) @ If: 2.6V @ 200A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR20040CT

BAGIAN SAHAM: 1562

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 200A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 100A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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GeneSiC Semiconductor

MBR30040CT

BAGIAN SAHAM: 1442

Konfigurasi Dioda: 1 Pair Common Cathode, Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-rata Diperbaiki (Io) (per Dioda): 300A (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 150A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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