Transistor - FET, MOSFET - Array

ALD114835PCL

BAGIAN SAHAM: 21080

Tipe FET: 4 N-Channel, Matched Pair, Fitur FET: Depletion Mode, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12mA, 3mA, Rds Aktif (Maks) @ Id, Vgs: 540 Ohm @ 0V, Vgs(th) (Maks) @ Id: 3.45V @ 1µA,

ALD114804PCL

BAGIAN SAHAM: 23866

Tipe FET: 4 N-Channel, Matched Pair, Fitur FET: Depletion Mode, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12mA, 3mA, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs(th) (Maks) @ Id: 360mV @ 1µA,

ALD1110EPAL

BAGIAN SAHAM: 20563

Tipe FET: 2 N-Channel (Dual) Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10V, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 5V, Vgs(th) (Maks) @ Id: 1.01V @ 1µA,

ALD210800PCL

BAGIAN SAHAM: 22423

Tipe FET: 4 N-Channel, Matched Pair, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 80mA, Rds Aktif (Maks) @ Id, Vgs: 25 Ohm, Vgs(th) (Maks) @ Id: 20mV @ 10µA,

ALD212900SAL

BAGIAN SAHAM: 29389

Tipe FET: 2 N-Channel (Dual) Matched Pair, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 80mA, Rds Aktif (Maks) @ Id, Vgs: 14 Ohm, Vgs(th) (Maks) @ Id: 20mV @ 20µA,

ALD1102SAL

BAGIAN SAHAM: 18848

Tipe FET: 2 P-Channel (Dual) Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Rds Aktif (Maks) @ Id, Vgs: 270 Ohm @ 5V, Vgs(th) (Maks) @ Id: 1.2V @ 10µA,

ALD310704APCL

BAGIAN SAHAM: 13531

Tipe FET: 4 P-Channel, Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 8V, Vgs(th) (Maks) @ Id: 380mV @ 1µA,

ALD110904PAL

BAGIAN SAHAM: 22024

Tipe FET: 2 N-Channel (Dual) Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12mA, 3mA, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 4.4V, Vgs(th) (Maks) @ Id: 420mV @ 1µA,

ALD110904SAL

BAGIAN SAHAM: 21998

Tipe FET: 2 N-Channel (Dual) Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12mA, 3mA, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 4.4V, Vgs(th) (Maks) @ Id: 420mV @ 1µA,

ALD110808APCL

BAGIAN SAHAM: 15203

Tipe FET: 4 N-Channel, Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12mA, 3mA, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 4.8V, Vgs(th) (Maks) @ Id: 810mV @ 1µA,

ALD110900PAL

BAGIAN SAHAM: 21972

Tipe FET: 2 N-Channel (Dual) Matched Pair, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 10.6V, Rds Aktif (Maks) @ Id, Vgs: 500 Ohm @ 4V, Vgs(th) (Maks) @ Id: 20mV @ 1µA,

APTMC120TAM33CTPAG

BAGIAN SAHAM: 107

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 78A (Tc), Rds Aktif (Maks) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs(th) (Maks) @ Id: 2.2V @ 3mA (Typ),

APTM50H14FT3G

BAGIAN SAHAM: 1149

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 26A, Rds Aktif (Maks) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs(th) (Maks) @ Id: 5V @ 1mA,

APTMC120AM25CT3AG

BAGIAN SAHAM: 283

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 113A (Tc), Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs(th) (Maks) @ Id: 2.2V @ 4mA (Typ),

APTSM120AM08CT6AG

BAGIAN SAHAM: 144

Tipe FET: 2 N-Channel (Dual), Schottky, Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 370A (Tc), Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs(th) (Maks) @ Id: 3V @ 10mA,

APTSM120TAM33CTPAG

BAGIAN SAHAM: 177

Tipe FET: 6 N-Channel (3-Phase Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 112A (Tc), Rds Aktif (Maks) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs(th) (Maks) @ Id: 3V @ 3mA,

APTSM120AM09CD3AG

BAGIAN SAHAM: 195

Tipe FET: 2 N-Channel (Dual), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 337A (Tc), Rds Aktif (Maks) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs(th) (Maks) @ Id: 3V @ 9mA,

APTSM120AM14CD3AG

BAGIAN SAHAM: 248

Tipe FET: 2 N-Channel (Dual), Schottky, Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 337A (Tc), Rds Aktif (Maks) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs(th) (Maks) @ Id: 3V @ 9mA,

APTSM120AM55CT1AG

BAGIAN SAHAM: 589

Tipe FET: 2 N-Channel (Dual), Schottky, Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 74A (Tc), Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs(th) (Maks) @ Id: 3V @ 2mA,

APTSM120AM25CT3AG

BAGIAN SAHAM: 290

Tipe FET: 2 N-Channel (Dual), Schottky, Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 148A (Tc), Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs(th) (Maks) @ Id: 3V @ 4mA,

APTMC120AM08CD3AG

BAGIAN SAHAM: 68

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Silicon Carbide (SiC), Tiriskan ke Tegangan Sumber (Vdss): 1200V (1.2kV), Arus - Pembuangan Kontinu (Id) @ 25°C: 250A (Tc), Rds Aktif (Maks) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs(th) (Maks) @ Id: 2.2V @ 10mA (Typ),

APTM50HM65FT3G

BAGIAN SAHAM: 692

Tipe FET: 4 N-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 51A, Rds Aktif (Maks) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs(th) (Maks) @ Id: 5V @ 2.5mA,

APTM50AM38STG

BAGIAN SAHAM: 559

Tipe FET: 2 N-Channel (Half Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 500V, Arus - Pembuangan Kontinu (Id) @ 25°C: 90A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs(th) (Maks) @ Id: 5V @ 5mA,

AO4828

BAGIAN SAHAM: 197

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Rds Aktif (Maks) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

AOE6936

BAGIAN SAHAM: 241

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 55A (Tc), 85A (Tc), Rds Aktif (Maks) @ Id, Vgs: 5 mOhm @ 20A, 10V, 2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA, 2.1V @ 250µA,

AO4862

BAGIAN SAHAM: 168294

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.5A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

AON4803

BAGIAN SAHAM: 144807

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.4A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

AO8810

BAGIAN SAHAM: 162690

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 7A, 4.5V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

AON6996

BAGIAN SAHAM: 180862

Tipe FET: 2 N-Channel (Dual) Asymmetrical, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 50A, 60A, Rds Aktif (Maks) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

AON6850

BAGIAN SAHAM: 99071

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

AO4614A

BAGIAN SAHAM: 181100

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, 5A, Rds Aktif (Maks) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

AO6602L

BAGIAN SAHAM: 108988

Tipe FET: N and P-Channel Complementary, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Rds Aktif (Maks) @ Id, Vgs: 75 mOhm @ 3.1A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

AOC3868

BAGIAN SAHAM: 244

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Standard, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

AOE6922

BAGIAN SAHAM: 231

AO8822

BAGIAN SAHAM: 186647

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7A, Rds Aktif (Maks) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

AO6800

BAGIAN SAHAM: 191185

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.4A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,