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Dioda - Penyearah - Tunggal

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S1AFG-M3/6A
Vishay Semiconductor Diodes Division

S1AFG-M3/6A

BAGIAN SAHAM: 112349

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.47µs,

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VSSAF3M10-M3/H
Vishay Semiconductor Diodes Division

VSSAF3M10-M3/H

BAGIAN SAHAM: 100

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS10P6HM3_A/I
Vishay Semiconductor Diodes Division

SS10P6HM3_A/I

BAGIAN SAHAM: 182602

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 7A, Tegangan - Maju (Vf) (Maks) @ If: 670mV @ 7A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S1AFK-M3/6A
Vishay Semiconductor Diodes Division

S1AFK-M3/6A

BAGIAN SAHAM: 171353

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.47µs,

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SS10PH45HM3_A/I
Vishay Semiconductor Diodes Division

SS10PH45HM3_A/I

BAGIAN SAHAM: 141131

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 720mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V15P6HM3_A/I
Vishay Semiconductor Diodes Division

V15P6HM3_A/I

BAGIAN SAHAM: 92

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 620mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P8-M3/86A
Vishay Semiconductor Diodes Division

V8P8-M3/86A

BAGIAN SAHAM: 188033

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P15-M3/H
Vishay Semiconductor Diodes Division

V8P15-M3/H

BAGIAN SAHAM: 163

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.08V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-6ESH01-M3/86A
Vishay Semiconductor Diodes Division

VS-6ESH01-M3/86A

BAGIAN SAHAM: 177394

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 940mV @ 6A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 22ns,

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VT5202-M3/4W
Vishay Semiconductor Diodes Division

VT5202-M3/4W

BAGIAN SAHAM: 92742

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SE30PAGHM3/I
Vishay Semiconductor Diodes Division

SE30PAGHM3/I

BAGIAN SAHAM: 178133

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.16V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.3µs,

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V15P8HM3_A/H
Vishay Semiconductor Diodes Division

V15P8HM3_A/H

BAGIAN SAHAM: 164

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S4PKHM3_A/I
Vishay Semiconductor Diodes Division

S4PKHM3_A/I

BAGIAN SAHAM: 101974

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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SB2H100-E3/54
Vishay Semiconductor Diodes Division

SB2H100-E3/54

BAGIAN SAHAM: 180596

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 790mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V12P15-M3/I
Vishay Semiconductor Diodes Division

V12P15-M3/I

BAGIAN SAHAM: 124

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.08V @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS5P9HM3_A/I
Vishay Semiconductor Diodes Division

SS5P9HM3_A/I

BAGIAN SAHAM: 128

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P8HM3_A/H
Vishay Semiconductor Diodes Division

V8P8HM3_A/H

BAGIAN SAHAM: 171

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS10P3HM3_A/I
Vishay Semiconductor Diodes Division

SS10P3HM3_A/I

BAGIAN SAHAM: 157059

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PAL45-M3/I
Vishay Semiconductor Diodes Division

V8PAL45-M3/I

BAGIAN SAHAM: 128585

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 4A (DC), Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS3P6LHM3_A/H
Vishay Semiconductor Diodes Division

SS3P6LHM3_A/H

BAGIAN SAHAM: 163508

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V12P8-M3/87A
Vishay Semiconductor Diodes Division

V12P8-M3/87A

BAGIAN SAHAM: 199224

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 4.3A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V15P12HM3/H
Vishay Semiconductor Diodes Division

V15P12HM3/H

BAGIAN SAHAM: 107

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 810mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V12P15HM3/H
Vishay Semiconductor Diodes Division

V12P15HM3/H

BAGIAN SAHAM: 128

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 1.08V @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF510HM3/H
Vishay Semiconductor Diodes Division

VSSAF510HM3/H

BAGIAN SAHAM: 142

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-2EJH02-M3/6B
Vishay Semiconductor Diodes Division

VS-2EJH02-M3/6B

BAGIAN SAHAM: 116384

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 930mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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VSSAF5M12-M3/I
Vishay Semiconductor Diodes Division

VSSAF5M12-M3/I

BAGIAN SAHAM: 68

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 890mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-2EJH01HM3/6B
Vishay Semiconductor Diodes Division

VS-2EJH01HM3/6B

BAGIAN SAHAM: 103724

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 930mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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VS-400UR160D
Vishay Semiconductor Diodes Division

VS-400UR160D

BAGIAN SAHAM: 1361

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1600V, Arus - Rata-Rata Dikoreksi (Io): 400A, Tegangan - Maju (Vf) (Maks) @ If: 1.62V @ 1500A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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VS-SD400N20PC
Vishay Semiconductor Diodes Division

VS-SD400N20PC

BAGIAN SAHAM: 741

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 2000V, Arus - Rata-Rata Dikoreksi (Io): 400A, Tegangan - Maju (Vf) (Maks) @ If: 1.62V @ 1500A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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VSSAF510-M3/I
Vishay Semiconductor Diodes Division

VSSAF510-M3/I

BAGIAN SAHAM: 114

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS1FN6-M3/I
Vishay Semiconductor Diodes Division

SS1FN6-M3/I

BAGIAN SAHAM: 103

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 530mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V10PM12-M3/86A
Vishay Semiconductor Diodes Division

V10PM12-M3/86A

BAGIAN SAHAM: 160229

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 3.9A, Tegangan - Maju (Vf) (Maks) @ If: 830mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PAN50-M3/I
Vishay Semiconductor Diodes Division

V8PAN50-M3/I

BAGIAN SAHAM: 188473

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3.7A, Tegangan - Maju (Vf) (Maks) @ If: 420mV @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5L45-M3/6A
Vishay Semiconductor Diodes Division

VSSAF5L45-M3/6A

BAGIAN SAHAM: 99042

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SE30PAG-M3/I
Vishay Semiconductor Diodes Division

SE30PAG-M3/I

BAGIAN SAHAM: 119037

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.16V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.3µs,

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VSSAF512-M3/I
Vishay Semiconductor Diodes Division

VSSAF512-M3/I

BAGIAN SAHAM: 67

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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