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Dioda - Penyearah - Tunggal

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FES8JT-E3/45
Vishay Semiconductor Diodes Division

FES8JT-E3/45

BAGIAN SAHAM: 73234

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.5V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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S4PD-M3/86A
Vishay Semiconductor Diodes Division

S4PD-M3/86A

BAGIAN SAHAM: 194986

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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V12P8HM3_A/H
Vishay Semiconductor Diodes Division

V12P8HM3_A/H

BAGIAN SAHAM: 88

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF515-M3/H
Vishay Semiconductor Diodes Division

VSSAF515-M3/H

BAGIAN SAHAM: 84

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS1FN6HM3/H
Vishay Semiconductor Diodes Division

SS1FN6HM3/H

BAGIAN SAHAM: 124

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 530mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V15PN50-M3/87A
Vishay Semiconductor Diodes Division

V15PN50-M3/87A

BAGIAN SAHAM: 185982

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P10HM3_A/I
Vishay Semiconductor Diodes Division

V8P10HM3_A/I

BAGIAN SAHAM: 166522

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 680mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S4PB-M3/86A
Vishay Semiconductor Diodes Division

S4PB-M3/86A

BAGIAN SAHAM: 112608

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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V15PM10HM3/I
Vishay Semiconductor Diodes Division

V15PM10HM3/I

BAGIAN SAHAM: 118

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P6-M3/86A
Vishay Semiconductor Diodes Division

V8P6-M3/86A

BAGIAN SAHAM: 119244

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 4.2A, Tegangan - Maju (Vf) (Maks) @ If: 610mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS10PH9-M3/87A
Vishay Semiconductor Diodes Division

SS10PH9-M3/87A

BAGIAN SAHAM: 137343

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF3N50-M3/6B
Vishay Semiconductor Diodes Division

VSSAF3N50-M3/6B

BAGIAN SAHAM: 112816

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 2.7A (DC), Tegangan - Maju (Vf) (Maks) @ If: 400mV @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PM10HM3/I
Vishay Semiconductor Diodes Division

V8PM10HM3/I

BAGIAN SAHAM: 154

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS12P2LHM3_A/H
Vishay Semiconductor Diodes Division

SS12P2LHM3_A/H

BAGIAN SAHAM: 169267

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS12P2LHM3_A/I
Vishay Semiconductor Diodes Division

SS12P2LHM3_A/I

BAGIAN SAHAM: 190394

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V25PN60-M3/87A
Vishay Semiconductor Diodes Division

V25PN60-M3/87A

BAGIAN SAHAM: 173907

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 6.4A, Tegangan - Maju (Vf) (Maks) @ If: 590mV @ 25A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5L45HM3_A/H
Vishay Semiconductor Diodes Division

VSSAF5L45HM3_A/H

BAGIAN SAHAM: 164

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 5A (DC), Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS8P2LHM3_A/I
Vishay Semiconductor Diodes Division

SS8P2LHM3_A/I

BAGIAN SAHAM: 115069

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V15PL50-M3/87A
Vishay Semiconductor Diodes Division

V15PL50-M3/87A

BAGIAN SAHAM: 165166

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 6A, Tegangan - Maju (Vf) (Maks) @ If: 570mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-3EJU06HM3/6A
Vishay Semiconductor Diodes Division

VS-3EJU06HM3/6A

BAGIAN SAHAM: 102552

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.35V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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V8PAM10HM3/I
Vishay Semiconductor Diodes Division

V8PAM10HM3/I

BAGIAN SAHAM: 82

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 780mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF3L45HM3_A/I
Vishay Semiconductor Diodes Division

VSSAF3L45HM3_A/I

BAGIAN SAHAM: 147

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 45V, Arus - Rata-Rata Dikoreksi (Io): 3A (DC), Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M12HM3/H
Vishay Semiconductor Diodes Division

VSSAF5M12HM3/H

BAGIAN SAHAM: 142

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 890mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SB230-E3/54
Vishay Semiconductor Diodes Division

SB230-E3/54

BAGIAN SAHAM: 116174

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8P6HM3_A/I
Vishay Semiconductor Diodes Division

V8P6HM3_A/I

BAGIAN SAHAM: 118

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 610mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V10P15HM3/H
Vishay Semiconductor Diodes Division

V10P15HM3/H

BAGIAN SAHAM: 87

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 1.08V @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SB2H90-E3/54
Vishay Semiconductor Diodes Division

SB2H90-E3/54

BAGIAN SAHAM: 136065

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 790mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V10P8HM3_A/I
Vishay Semiconductor Diodes Division

V10P8HM3_A/I

BAGIAN SAHAM: 122

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 10A, Tegangan - Maju (Vf) (Maks) @ If: 680mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-400UR120D
Vishay Semiconductor Diodes Division

VS-400UR120D

BAGIAN SAHAM: 1318

Tipe Dioda: Standard, Reverse Polarity, Tegangan - DC Reverse (Vr) (Maks): 1200V, Arus - Rata-Rata Dikoreksi (Io): 400A, Tegangan - Maju (Vf) (Maks) @ If: 1.62V @ 1500A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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V8PAM10-M3/I
Vishay Semiconductor Diodes Division

V8PAM10-M3/I

BAGIAN SAHAM: 132

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 780mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V12PM10HM3/I
Vishay Semiconductor Diodes Division

V12PM10HM3/I

BAGIAN SAHAM: 151

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 750mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V20PL50-M3/87A
Vishay Semiconductor Diodes Division

V20PL50-M3/87A

BAGIAN SAHAM: 178992

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 5.5A, Tegangan - Maju (Vf) (Maks) @ If: 590mV @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S4PDHM3_A/I
Vishay Semiconductor Diodes Division

S4PDHM3_A/I

BAGIAN SAHAM: 175390

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 4A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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SS12P2L-M3/86A
Vishay Semiconductor Diodes Division

SS12P2L-M3/86A

BAGIAN SAHAM: 169219

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 12A, Tegangan - Maju (Vf) (Maks) @ If: 560mV @ 12A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS3P6LHM3_A/I
Vishay Semiconductor Diodes Division

SS3P6LHM3_A/I

BAGIAN SAHAM: 198148

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 600mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V15PM12HM3/H
Vishay Semiconductor Diodes Division

V15PM12HM3/H

BAGIAN SAHAM: 83

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 15A, Tegangan - Maju (Vf) (Maks) @ If: 840mV @ 15A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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