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VS-3EJH01HM3/6A
Vishay Semiconductor Diodes Division

VS-3EJH01HM3/6A

BAGIAN SAHAM: 165175

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 930mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 18ns,

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SB1H90-E3/73
Vishay Semiconductor Diodes Division

SB1H90-E3/73

BAGIAN SAHAM: 176647

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 770mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S1PD-M3/85A
Vishay Semiconductor Diodes Division

S1PD-M3/85A

BAGIAN SAHAM: 115870

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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SS24-E3/5BT
Vishay Semiconductor Diodes Division

SS24-E3/5BT

BAGIAN SAHAM: 181211

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 500mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS3H9-M3/57T
Vishay Semiconductor Diodes Division

SS3H9-M3/57T

BAGIAN SAHAM: 159623

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG4C-E3/54
Vishay Semiconductor Diodes Division

UG4C-E3/54

BAGIAN SAHAM: 177524

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 30ns,

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VS-10BQ015HM3/5BT
Vishay Semiconductor Diodes Division

VS-10BQ015HM3/5BT

BAGIAN SAHAM: 189348

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 15V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 330mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M15-M3/H
Vishay Semiconductor Diodes Division

VSSAF5M15-M3/H

BAGIAN SAHAM: 151

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS2D-M3/52T
Vishay Semiconductor Diodes Division

RS2D-M3/52T

BAGIAN SAHAM: 156675

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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VS-3EGU06-M3/5BT
Vishay Semiconductor Diodes Division

VS-3EGU06-M3/5BT

BAGIAN SAHAM: 178519

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.7V @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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VS-MBRS190-M3/5BT
Vishay Semiconductor Diodes Division

VS-MBRS190-M3/5BT

BAGIAN SAHAM: 185272

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 90V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 780mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VS-3EJH02HM3/6A
Vishay Semiconductor Diodes Division

VS-3EJH02HM3/6A

BAGIAN SAHAM: 178329

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 930mV @ 3A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 18ns,

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SL42-E3/57T
Vishay Semiconductor Diodes Division

SL42-E3/57T

BAGIAN SAHAM: 165298

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 4A, Tegangan - Maju (Vf) (Maks) @ If: 420mV @ 4A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PAM12-M3/I
Vishay Semiconductor Diodes Division

V8PAM12-M3/I

BAGIAN SAHAM: 136

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 880mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S1AFJ-M3/6A
Vishay Semiconductor Diodes Division

S1AFJ-M3/6A

BAGIAN SAHAM: 190753

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.47µs,

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GPP10J-E3/73
Vishay Semiconductor Diodes Division

GPP10J-E3/73

BAGIAN SAHAM: 115689

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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VS-10BQ040HM3/5BT
Vishay Semiconductor Diodes Division

VS-10BQ040HM3/5BT

BAGIAN SAHAM: 133136

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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UG1A-E3/54
Vishay Semiconductor Diodes Division

UG1A-E3/54

BAGIAN SAHAM: 164168

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 950mV @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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SS2PH10-M3/85A
Vishay Semiconductor Diodes Division

SS2PH10-M3/85A

BAGIAN SAHAM: 169958

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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SS2PH5HM3/85A
Vishay Semiconductor Diodes Division

SS2PH5HM3/85A

BAGIAN SAHAM: 102737

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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CS3K-E3/I
Vishay Semiconductor Diodes Division

CS3K-E3/I

BAGIAN SAHAM: 156130

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.8µs,

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GPP10J-E3/54
Vishay Semiconductor Diodes Division

GPP10J-E3/54

BAGIAN SAHAM: 102282

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io),

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S1PM-M3/85A
Vishay Semiconductor Diodes Division

S1PM-M3/85A

BAGIAN SAHAM: 147401

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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S2KHE3_A/I
Vishay Semiconductor Diodes Division

S2KHE3_A/I

BAGIAN SAHAM: 171812

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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V8PA10-M3/I
Vishay Semiconductor Diodes Division

V8PA10-M3/I

BAGIAN SAHAM: 110

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 760mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S2K-M3/52T
Vishay Semiconductor Diodes Division

S2K-M3/52T

BAGIAN SAHAM: 117990

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2µs,

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V20150S-M3/4W
Vishay Semiconductor Diodes Division

V20150S-M3/4W

BAGIAN SAHAM: 106130

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 20A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 20A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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VSSAF5M6HM3/H
Vishay Semiconductor Diodes Division

VSSAF5M6HM3/H

BAGIAN SAHAM: 77

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 5A, Tegangan - Maju (Vf) (Maks) @ If: 660mV @ 5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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S3M-M3/9AT
Vishay Semiconductor Diodes Division

S3M-M3/9AT

BAGIAN SAHAM: 181258

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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SE30PAD-M3/I
Vishay Semiconductor Diodes Division

SE30PAD-M3/I

BAGIAN SAHAM: 166924

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.16V @ 3A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.3µs,

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V8PA15-M3/I
Vishay Semiconductor Diodes Division

V8PA15-M3/I

BAGIAN SAHAM: 123

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 1.2V @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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V8PA12-M3/I
Vishay Semiconductor Diodes Division

V8PA12-M3/I

BAGIAN SAHAM: 156

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 120V, Arus - Rata-Rata Dikoreksi (Io): 8A, Tegangan - Maju (Vf) (Maks) @ If: 870mV @ 8A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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RS3A-M3/9AT
Vishay Semiconductor Diodes Division

RS3A-M3/9AT

BAGIAN SAHAM: 179050

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 2.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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S3B-M3/9AT
Vishay Semiconductor Diodes Division

S3B-M3/9AT

BAGIAN SAHAM: 143312

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 3A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 2.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 2.5µs,

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S1PG-M3/85A
Vishay Semiconductor Diodes Division

S1PG-M3/85A

BAGIAN SAHAM: 167861

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 1A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 1.8µs,

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V10P8-M3/87A
Vishay Semiconductor Diodes Division

V10P8-M3/87A

BAGIAN SAHAM: 156354

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 80V, Arus - Rata-Rata Dikoreksi (Io): 3.9A, Tegangan - Maju (Vf) (Maks) @ If: 680mV @ 10A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io),

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