Dioda - Penyearah - Tunggal | Produk Semikonduktor Diskrit | 100

BYM12-300HE3_A/H

BAGIAN SAHAM: 273

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 300V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BYM11-200HE3/97

BAGIAN SAHAM: 146674

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 150ns,

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Vishay Semiconductor Diodes Division

BYM11-800-E3/96

BAGIAN SAHAM: 150291

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 800V, Arus - Rata-Rata Dikoreksi (Io): 1A, Tegangan - Maju (Vf) (Maks) @ If: 1.3V @ 1A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 500ns,

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Vishay Semiconductor Diodes Division

BAT46-TAP

BAGIAN SAHAM: 108452

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 150mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 250mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT81S-TAP

BAGIAN SAHAM: 154468

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 30mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT82S-TR

BAGIAN SAHAM: 158822

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 30mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAV20-TAP

BAGIAN SAHAM: 159155

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 150V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT46-TR

BAGIAN SAHAM: 197051

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 150mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 10mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT86S-TR

BAGIAN SAHAM: 122405

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT41-TR

BAGIAN SAHAM: 119842

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 100mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAY135-TAP

BAGIAN SAHAM: 148532

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 125V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 30mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT83S-TAP

BAGIAN SAHAM: 128512

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 30mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT41-TAP

BAGIAN SAHAM: 196580

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 100mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 200mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT43-TR

BAGIAN SAHAM: 102104

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT86S-TAP

BAGIAN SAHAM: 107935

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 900mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAV18-TR

BAGIAN SAHAM: 101978

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS33-TAP

BAGIAN SAHAM: 109507

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT85S-TR

BAGIAN SAHAM: 182695

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAV17-TAP

BAGIAN SAHAM: 142042

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS34-TR

BAGIAN SAHAM: 194217

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 60V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT43-TAP

BAGIAN SAHAM: 116168

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 450mV @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAV18-TAP

BAGIAN SAHAM: 118002

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAT42-TAP

BAGIAN SAHAM: 110674

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 650mV @ 50mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BAT82S-TAP

BAGIAN SAHAM: 116604

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 50V, Arus - Rata-Rata Dikoreksi (Io): 30mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 15mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAV19-TAP

BAGIAN SAHAM: 189935

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAV17-TR

BAGIAN SAHAM: 111895

Tipe Dioda: Standard, Tegangan - DC Reverse (Vr) (Maks): 20V, Arus - Rata-Rata Dikoreksi (Io): 250mA (DC), Tegangan - Maju (Vf) (Maks) @ If: 1V @ 100mA, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 50ns,

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Vishay Semiconductor Diodes Division

BAS581-02V-V-G-08

BAGIAN SAHAM: 123251

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 40V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 370mV @ 1mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed,

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Vishay Semiconductor Diodes Division

BAT54-02V-V-G-08

BAGIAN SAHAM: 184839

Tipe Dioda: Schottky, Tegangan - DC Reverse (Vr) (Maks): 30V, Arus - Rata-Rata Dikoreksi (Io): 200mA, Tegangan - Maju (Vf) (Maks) @ If: 800mV @ 100mA, Kecepatan: Small Signal =< 200mA (Io), Any Speed, Waktu Pemulihan Terbalik (trr): 5ns,

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Vishay Semiconductor Diodes Division

BYG22D-M3/TR

BAGIAN SAHAM: 175613

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG21MHE3_A/I

BAGIAN SAHAM: 130523

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 1000V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.6V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 120ns,

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Vishay Semiconductor Diodes Division

BYG20JHE3_A/H

BAGIAN SAHAM: 112559

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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Vishay Semiconductor Diodes Division

BYG22B-E3/TR3

BAGIAN SAHAM: 191280

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 100V, Arus - Rata-Rata Dikoreksi (Io): 2A, Tegangan - Maju (Vf) (Maks) @ If: 1.1V @ 2A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 25ns,

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Vishay Semiconductor Diodes Division

BYG10G-M3/TR3

BAGIAN SAHAM: 131337

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG10J-M3/TR

BAGIAN SAHAM: 166092

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 600V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.15V @ 1.5A, Kecepatan: Standard Recovery >500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 4µs,

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Vishay Semiconductor Diodes Division

BYG24GHM3_A/I

BAGIAN SAHAM: 116282

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 400V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.25V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 140ns,

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Vishay Semiconductor Diodes Division

BYG20DHE3_A/I

BAGIAN SAHAM: 173970

Tipe Dioda: Avalanche, Tegangan - DC Reverse (Vr) (Maks): 200V, Arus - Rata-Rata Dikoreksi (Io): 1.5A, Tegangan - Maju (Vf) (Maks) @ If: 1.4V @ 1.5A, Kecepatan: Fast Recovery =< 500ns, > 200mA (Io), Waktu Pemulihan Terbalik (trr): 75ns,

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