Transistor - FET, MOSFET - Array

Rumah
Transistor - FET, MOSFET - Array

Diodes Incorporated

DMC25D1UVT-13

BAGIAN SAHAM: 110745

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 25V, 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 500mA, 3.9A, Rds Aktif (Maks) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMP2060UFDB-13

BAGIAN SAHAM: 197487

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.2A, Rds Aktif (Maks) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

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Diodes Incorporated

DMN2014LHAB-7

BAGIAN SAHAM: 140079

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9A, Rds Aktif (Maks) @ Id, Vgs: 13 mOhm @ 4A, 4.5V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

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Diodes Incorporated

DMC1029UFDB-7

BAGIAN SAHAM: 193190

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.6A, 3.8A, Rds Aktif (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

ZXMP6A16DN8TC

BAGIAN SAHAM: 144095

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.9A, Rds Aktif (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMNH4026SSD-13

BAGIAN SAHAM: 144862

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.5A (Ta), Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN5L06VAK-7

BAGIAN SAHAM: 124182

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 280mA, Rds Aktif (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC3032LSD-13

BAGIAN SAHAM: 156719

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8.1A, 7A, Rds Aktif (Maks) @ Id, Vgs: 32 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMN1029UFDB-7

BAGIAN SAHAM: 192045

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.6A, Rds Aktif (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC4028SSD-13

BAGIAN SAHAM: 191384

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.5A, 4.8A, Rds Aktif (Maks) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

ZXMP6A16DN8TA

BAGIAN SAHAM: 193933

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.9A (Ta), Rds Aktif (Maks) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMG1016VQ-7

BAGIAN SAHAM: 134633

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 870mA, 640mA, Rds Aktif (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMP2200UDW-7

BAGIAN SAHAM: 131211

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 900mA, Rds Aktif (Maks) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs(th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

ZXMN2A04DN8TA

BAGIAN SAHAM: 61374

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.9A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA (Min),

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Diodes Incorporated

DMN3135LVT-7

BAGIAN SAHAM: 125318

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.5A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs(th) (Maks) @ Id: 2.2V @ 250µA,

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Diodes Incorporated

DMN4034SSD-13

BAGIAN SAHAM: 104438

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.8A, Rds Aktif (Maks) @ Id, Vgs: 34 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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DMPH6050SSDQ-13

Diodes Incorporated

DMPH6050SSDQ-13

BAGIAN SAHAM: 176283

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.2A (Ta), Rds Aktif (Maks) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMC4040SSDQ-13

BAGIAN SAHAM: 191341

Tipe FET: N and P-Channel Complementary, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.5A (Ta), Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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Diodes Incorporated

DMP3056LSDQ-13

BAGIAN SAHAM: 10772

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.9A (Ta), Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 6A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMC1229UFDB-7

BAGIAN SAHAM: 185667

Tipe FET: N and P-Channel, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.6A, 3.8A, Rds Aktif (Maks) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2215UDM-7

BAGIAN SAHAM: 186022

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A, Rds Aktif (Maks) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMG1016UDW-7

BAGIAN SAHAM: 177152

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.07A, 845mA, Rds Aktif (Maks) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMT3020LFDB-13

BAGIAN SAHAM: 176284

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.7A (Ta), Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMG8822UTS-13

BAGIAN SAHAM: 155822

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A (Ta), Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 8.2A, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

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Diodes Incorporated

DMPH6050SPD-13

BAGIAN SAHAM: 156193

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Arus - Pembuangan Kontinu (Id) @ 25°C: 26A (Tc), Rds Aktif (Maks) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMC3025LSDQ-13

BAGIAN SAHAM: 10850

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta), Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 7.4A, 10V, 45 mOhm @ 5.2A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMC2400UV-13

BAGIAN SAHAM: 156715

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.03A, 700mA, Rds Aktif (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

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Diodes Incorporated

DMN3016LDN-13

BAGIAN SAHAM: 103259

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.2A (Ta), Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 11A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMTH4011SPD-13

BAGIAN SAHAM: 10768

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 11.1A (Ta), 42A (Tc), Rds Aktif (Maks) @ Id, Vgs: 15 mOhm @ 20A, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

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Diodes Incorporated

DMN3012LFG-13

BAGIAN SAHAM: 283

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 20A (Tc), Rds Aktif (Maks) @ Id, Vgs: 12 mOhm @ 15A, 5V, 6 mOhm @ 15A, 5V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA, 1.15V @ 250µA,

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DMNH6022SSDQ-13

Diodes Incorporated

DMNH6022SSDQ-13

BAGIAN SAHAM: 158541

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.1A, 22.6A, Rds Aktif (Maks) @ Id, Vgs: 27 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN66D0LDW-7

BAGIAN SAHAM: 193621

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 115mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 6 Ohm @ 115mA, 5V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMN2016LHAB-7

BAGIAN SAHAM: 190312

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.5A, Rds Aktif (Maks) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V, Vgs(th) (Maks) @ Id: 1.1V @ 250µA,

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Diodes Incorporated

DMG1016VQ-13

BAGIAN SAHAM: 163191

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 870mA, 640mA, Rds Aktif (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC1030UFDB-13

BAGIAN SAHAM: 115059

Tipe FET: N and P-Channel Complementary, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta), Rds Aktif (Maks) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2029USD-13

BAGIAN SAHAM: 136935

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.8A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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