Transistor - FET, MOSFET - Array | Produk Semikonduktor Diskrit | 12

DMN6066SSD-13

BAGIAN SAHAM: 191351

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.3A, Rds Aktif (Maks) @ Id, Vgs: 66 mOhm @ 4.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMC4040SSD-13

BAGIAN SAHAM: 197787

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.8A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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Diodes Incorporated

ZXMHC3F381N8TC

BAGIAN SAHAM: 158568

Tipe FET: 2 N and 2 P-Channel (H-Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.98A, 3.36A, Rds Aktif (Maks) @ Id, Vgs: 33 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMP3098LSD-13

BAGIAN SAHAM: 100979

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.4A, Rds Aktif (Maks) @ Id, Vgs: 65 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMC2038LVT-7

BAGIAN SAHAM: 126085

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.7A, 2.6A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 4A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC4015SSD-13

BAGIAN SAHAM: 158558

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8.6A, 6.2A, Rds Aktif (Maks) @ Id, Vgs: 15 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMC2020USD-13

BAGIAN SAHAM: 192882

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.8A, 6.3A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 7A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMN601DMK-7

BAGIAN SAHAM: 108557

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 510mA, Rds Aktif (Maks) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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Diodes Incorporated

DMC3021LSD-13

BAGIAN SAHAM: 164162

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8.5A, 7A, Rds Aktif (Maks) @ Id, Vgs: 21 mOhm @ 7A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMN2041LSD-13

BAGIAN SAHAM: 151153

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.63A, Rds Aktif (Maks) @ Id, Vgs: 28 mOhm @ 6A, 4.5V, Vgs(th) (Maks) @ Id: 1.2V @ 250µA,

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Diodes Incorporated

DMN63D8LV-7

BAGIAN SAHAM: 151779

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 260mA, Rds Aktif (Maks) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

ZDM4306NTC

BAGIAN SAHAM: 2685

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A, Rds Aktif (Maks) @ Id, Vgs: 330 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 3V @ 1mA,

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Diodes Incorporated

DMC2990UDJ-7

BAGIAN SAHAM: 146844

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 450mA, 310mA, Rds Aktif (Maks) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2050LFDB-13

BAGIAN SAHAM: 178082

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.3A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMG6968UDM-7

BAGIAN SAHAM: 152996

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.5A, Rds Aktif (Maks) @ Id, Vgs: 24 mOhm @ 6.5A, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

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Diodes Incorporated

DMN6040SSD-13

BAGIAN SAHAM: 169983

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5A, Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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Diodes Incorporated

DMN3018SSD-13

BAGIAN SAHAM: 138401

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.7A, Rds Aktif (Maks) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

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Diodes Incorporated

DMN2004VK-7

BAGIAN SAHAM: 165948

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 540mA, Rds Aktif (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMP4025LSD-13

BAGIAN SAHAM: 193316

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.9A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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Diodes Incorporated

DMN63D8LDW-7

BAGIAN SAHAM: 177171

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 220mA, Rds Aktif (Maks) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

DMN5L06VK-7

BAGIAN SAHAM: 133884

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 280mA, Rds Aktif (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN67D8LDW-13

BAGIAN SAHAM: 104906

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 230mA, Rds Aktif (Maks) @ Id, Vgs: 5 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

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Diodes Incorporated

DMN2005DLP4K-7

BAGIAN SAHAM: 162696

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 300mA, Rds Aktif (Maks) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs(th) (Maks) @ Id: 900mV @ 100µA,

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Diodes Incorporated

DI9956T

BAGIAN SAHAM: 2624

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.7A,

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Diodes Incorporated

DMN3190LDW-7

BAGIAN SAHAM: 106764

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, Rds Aktif (Maks) @ Id, Vgs: 190 mOhm @ 1.3A, 10V, Vgs(th) (Maks) @ Id: 2.8V @ 250µA,

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Diodes Incorporated

DMC31D5UDJ-7B

BAGIAN SAHAM: 166000

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 220mA, 200mA, Rds Aktif (Maks) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMP2004VK-7

BAGIAN SAHAM: 179589

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 530mA, Rds Aktif (Maks) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

ZXMN3AM832TA

BAGIAN SAHAM: 2640

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.9A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMN61D9UDW-7

BAGIAN SAHAM: 182168

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 350mA, Rds Aktif (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC2700UDM-7

BAGIAN SAHAM: 130711

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.34A, 1.14A, Rds Aktif (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMHC3025LSD-13

BAGIAN SAHAM: 180355

Tipe FET: 2 N and 2 P-Channel (H-Bridge), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6A, 4.2A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

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Diodes Incorporated

DMG1023UV-7

BAGIAN SAHAM: 104503

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.03A, Rds Aktif (Maks) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMN2011UFX-7

BAGIAN SAHAM: 171759

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 12.2A (Ta), Rds Aktif (Maks) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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Diodes Incorporated

DMC1017UPD-13

BAGIAN SAHAM: 2684

Tipe FET: N and P-Channel Complementary, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, Arus - Pembuangan Kontinu (Id) @ 25°C: 13A (Ta), 9.4A (Ta), Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, 32 mOhm @ 8.9A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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Diodes Incorporated

ZXMD63P03XTA

BAGIAN SAHAM: 60635

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Rds Aktif (Maks) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

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Diodes Incorporated

DMN53D0LDW-13

BAGIAN SAHAM: 146068

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 360mA, Rds Aktif (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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