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Transistor - FET, MOSFET - Array

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  • Transistor - FET, MOSFET - Array
DMG6602SVT-7
Diodes Incorporated

DMG6602SVT-7

BAGIAN SAHAM: 125578

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, 4.5V Drive, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.4A, 2.8A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs(th) (Maks) @ Id: 2.3V @ 250µA,

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DMG4800LSD-13
Diodes Incorporated

DMG4800LSD-13

BAGIAN SAHAM: 135796

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7.5A, Rds Aktif (Maks) @ Id, Vgs: 16 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 1.6V @ 250µA,

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DMN2016UTS-13
Diodes Incorporated

DMN2016UTS-13

BAGIAN SAHAM: 168999

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 8.58A, Rds Aktif (Maks) @ Id, Vgs: 14.5 mOhm @ 9.4A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMC2004VK-7
Diodes Incorporated

DMC2004VK-7

BAGIAN SAHAM: 152592

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 670mA, 530mA, Rds Aktif (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMP2160UFDB-7
Diodes Incorporated

DMP2160UFDB-7

BAGIAN SAHAM: 170482

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.8A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 2.8A, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

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DMP3085LSD-13
Diodes Incorporated

DMP3085LSD-13

BAGIAN SAHAM: 197990

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.9A, Rds Aktif (Maks) @ Id, Vgs: 70 mOhm @ 5.3A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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DMG1026UV-7
Diodes Incorporated

DMG1026UV-7

BAGIAN SAHAM: 118631

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 410mA, Rds Aktif (Maks) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 1.8V @ 250µA,

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DMC2004DWK-7
Diodes Incorporated

DMC2004DWK-7

BAGIAN SAHAM: 194049

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 540mA, 430mA, Rds Aktif (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMN6040SSDQ-13
Diodes Incorporated

DMN6040SSDQ-13

BAGIAN SAHAM: 115786

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5A (Ta), Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

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DMP210DUDJ-7
Diodes Incorporated

DMP210DUDJ-7

BAGIAN SAHAM: 191309

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 200mA, Rds Aktif (Maks) @ Id, Vgs: 5.5 Ohm @ 100mA, 4.5V, Vgs(th) (Maks) @ Id: 1.15V @ 250µA,

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DMN601DWK-7
Diodes Incorporated

DMN601DWK-7

BAGIAN SAHAM: 176941

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 305mA, Rds Aktif (Maks) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 1mA,

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DMN5L06DMK-7
Diodes Incorporated

DMN5L06DMK-7

BAGIAN SAHAM: 107540

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 305mA, Rds Aktif (Maks) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMN2050LFDB-7
Diodes Incorporated

DMN2050LFDB-7

BAGIAN SAHAM: 105819

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.3A, Rds Aktif (Maks) @ Id, Vgs: 45 mOhm @ 5A, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMN2004DMK-7
Diodes Incorporated

DMN2004DMK-7

BAGIAN SAHAM: 125678

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 540mA, Rds Aktif (Maks) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMC2400UV-7
Diodes Incorporated

DMC2400UV-7

BAGIAN SAHAM: 138188

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.03A, 700mA, Rds Aktif (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

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DMG1016V-7
Diodes Incorporated

DMG1016V-7

BAGIAN SAHAM: 107374

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 870mA, 640mA, Rds Aktif (Maks) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

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DMG5802LFX-7
Diodes Incorporated

DMG5802LFX-7

BAGIAN SAHAM: 173089

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 24V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.5A, Rds Aktif (Maks) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

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