Transistor - FET, MOSFET - Array

Rumah
Transistor - FET, MOSFET - Array

Diodes Incorporated

ZXMD63N03XTC

BAGIAN SAHAM: 2755

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.3A, Rds Aktif (Maks) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

Wishlist.

Diodes Incorporated

ZXMN6A11DN8TC

BAGIAN SAHAM: 2682

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.5A, Rds Aktif (Maks) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

Wishlist.

Diodes Incorporated

ZXMC4A16DN8TC

BAGIAN SAHAM: 2674

Tipe FET: N and P-Channel Complementary, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 40V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.2A (Ta), 4.7A (Ta), Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, 60 mOhm @ 3.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250mA (Min),

Wishlist.

Diodes Incorporated

DMN2041UFDB-7

BAGIAN SAHAM: 2948

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.7A, Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs(th) (Maks) @ Id: 1.4V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMD65N03N8TA

BAGIAN SAHAM: 2627

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 6.5A,

Wishlist.

Diodes Incorporated

DMC3018LSD-13

BAGIAN SAHAM: 2789

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.1A, 6A, Rds Aktif (Maks) @ Id, Vgs: 20 mOhm @ 6.9A, 10V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMC3A18DN8TA

BAGIAN SAHAM: 2765

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 5.8A, 4.8A, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 5.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

Wishlist.

Diodes Incorporated

ZVN4206NTA

BAGIAN SAHAM: 2720

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V,

Wishlist.

Diodes Incorporated

ZXMD65P02N8TA

BAGIAN SAHAM: 2712

Tipe FET: 2 P-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA (Min),

Wishlist.

Diodes Incorporated

DMN5L06V-7

BAGIAN SAHAM: 2781

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 280mA, Rds Aktif (Maks) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs(th) (Maks) @ Id: 1.2V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMD63N02XTC

BAGIAN SAHAM: 2710

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.5A, Rds Aktif (Maks) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

Wishlist.

Diodes Incorporated

DMC62D0SVQ-7

BAGIAN SAHAM: 24308

Tipe FET: N and P-Channel Complementary, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 571mA (Ta), 304mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V, 6 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 2.5V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMC3A17DN8TC

BAGIAN SAHAM: 2756

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.1A, 3.4A, Rds Aktif (Maks) @ Id, Vgs: 50 mOhm @ 7.8A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

Wishlist.

Diodes Incorporated

DI9942T

BAGIAN SAHAM: 2655

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.5A,

Wishlist.

Diodes Incorporated

ZXMHC10A07T8TA

BAGIAN SAHAM: 83530

Tipe FET: 2 N and 2 P-Channel (H-Bridge), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 100V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, 800mA, Rds Aktif (Maks) @ Id, Vgs: 700 mOhm @ 1.5A, 10V, Vgs(th) (Maks) @ Id: 4V @ 250µA,

Wishlist.

Diodes Incorporated

DI9945T

BAGIAN SAHAM: 2659

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.5A, Rds Aktif (Maks) @ Id, Vgs: 100 mOhm @ 3.5A, 10V,

Wishlist.

Diodes Incorporated

DI9952T

BAGIAN SAHAM: 2661

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2.9A,

Wishlist.

Diodes Incorporated

DMN2040LSD-13

BAGIAN SAHAM: 2799

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 7A, Rds Aktif (Maks) @ Id, Vgs: 26 mOhm @ 6A, 4.5V, Vgs(th) (Maks) @ Id: 1.2V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMD65N02N8TA

BAGIAN SAHAM: 2663

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 25 mOhm @ 6A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA (Min),

Wishlist.

Diodes Incorporated

ZDM4206NTA

BAGIAN SAHAM: 2634

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1A, Rds Aktif (Maks) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs(th) (Maks) @ Id: 3V @ 1mA,

Wishlist.

Diodes Incorporated

DMN32D2LDF-7

BAGIAN SAHAM: 157687

Tipe FET: 2 N-Channel (Dual) Common Source, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 400mA, Rds Aktif (Maks) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs(th) (Maks) @ Id: 1.2V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMN6A09DN8TC

BAGIAN SAHAM: 2680

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.3A, Rds Aktif (Maks) @ Id, Vgs: 40 mOhm @ 8.2A, 10V, Vgs(th) (Maks) @ Id: 3V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMN3A06DN8TC

BAGIAN SAHAM: 2755

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.9A, Rds Aktif (Maks) @ Id, Vgs: 35 mOhm @ 9A, 10V, Vgs(th) (Maks) @ Id: 1V @ 250µA (Min),

Wishlist.

Diodes Incorporated

DMP58D0SV-7

BAGIAN SAHAM: 194639

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 160mA, Rds Aktif (Maks) @ Id, Vgs: 8 Ohm @ 100mA, 5V, Vgs(th) (Maks) @ Id: 2.1V @ 250µA,

Wishlist.

Diodes Incorporated

DMN26D0UDJ-7

BAGIAN SAHAM: 112847

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 240mA, Rds Aktif (Maks) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs(th) (Maks) @ Id: 1.05V @ 250µA,

Wishlist.

Diodes Incorporated

DMG6602SVTQ-7

BAGIAN SAHAM: 143884

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 30V, Arus - Pembuangan Kontinu (Id) @ 25°C: 3.4A, 2.8A, Rds Aktif (Maks) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs(th) (Maks) @ Id: 2.3V @ 250µA,

Wishlist.

Diodes Incorporated

DMN65D8LDW-7

BAGIAN SAHAM: 141176

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 180mA, Rds Aktif (Maks) @ Id, Vgs: 6 Ohm @ 115mA, 10V, Vgs(th) (Maks) @ Id: 2V @ 250µA,

Wishlist.

Diodes Incorporated

DMN53D0LDW-7

BAGIAN SAHAM: 110016

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 50V, Arus - Pembuangan Kontinu (Id) @ 25°C: 360mA, Rds Aktif (Maks) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMD63C02XTA

BAGIAN SAHAM: 30114

Tipe FET: N and P-Channel, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA (Min),

Wishlist.

Diodes Incorporated

DMG1024UV-7

BAGIAN SAHAM: 127188

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.38A, Rds Aktif (Maks) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

Wishlist.

Diodes Incorporated

ZDM4306NTA

BAGIAN SAHAM: 2658

Tipe FET: 2 N-Channel (Dual), Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 60V, Arus - Pembuangan Kontinu (Id) @ 25°C: 2A, Rds Aktif (Maks) @ Id, Vgs: 330 mOhm @ 3A, 10V, Vgs(th) (Maks) @ Id: 3V @ 1mA,

Wishlist.

Diodes Incorporated

DMC1018UPD-13

BAGIAN SAHAM: 180420

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 12V, 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 9.5A, 6.9A, Rds Aktif (Maks) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs(th) (Maks) @ Id: 1.5V @ 250µA,

Wishlist.

Diodes Incorporated

ZXMD63P02XTA

BAGIAN SAHAM: 110973

Tipe FET: 2 P-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Rds Aktif (Maks) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs(th) (Maks) @ Id: 700mV @ 250µA (Min),

Wishlist.

Diodes Incorporated

DMC21D1UDA-7B

BAGIAN SAHAM: 21525

Tipe FET: N and P-Channel, Fitur FET: Standard, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 455mA (Ta), 328mA (Ta), Rds Aktif (Maks) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V, Vgs(th) (Maks) @ Id: 1V @ 250µA,

Wishlist.

Diodes Incorporated

DMG9926UDM-7

BAGIAN SAHAM: 140078

Tipe FET: 2 N-Channel (Dual) Common Drain, Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 4.2A, Rds Aktif (Maks) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

Wishlist.

Diodes Incorporated

DMN2400UV-7

BAGIAN SAHAM: 180036

Tipe FET: 2 N-Channel (Dual), Fitur FET: Logic Level Gate, Tiriskan ke Tegangan Sumber (Vdss): 20V, Arus - Pembuangan Kontinu (Id) @ 25°C: 1.33A, Rds Aktif (Maks) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs(th) (Maks) @ Id: 900mV @ 250µA,

Wishlist.

413

«
3
4
5
6
7
8
9
10
11
12
»